NXV08A170DB2 [ONSEMI]
单相逆变器模块，用于48V汽车应用;
| 型号： | NXV08A170DB2 |
| 厂家： | 
ONSEMI |
| 描述： | 单相逆变器模块，用于48V汽车应用 |
| 文件： | 总12页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Single Phase Inverter
Automotive Power MOSFET
Module
NXV08A170DB2
Features
• Half Bridge Inverter for Variable Speed Motor Drive
• Current Sensing and Temperature Sensing
• Electrically Isolated DBC Substrate for Low Thermal Resistance
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• C Snubber for Low EMI
APM12−CBA
CASE MODBG
MARKING DIAGRAM
• AQG324 Qualified
• PPAP Capable
• This Device is Pb−free, RoHS and UL94−V0 Compliant
NXV08A170DB2
ZZZ ATYWW
NNNNNNN
Applications
• 48 V Motor Control
Benefits
• Enable Design of Small, Efficient and Reliable System for Reduced
NXV08A170DB2 = Specific Device Code
Vehicle Fuel Consumption and CO Emission
2
ZZZ
AT
Y
= Lot ID
= Assembly & Test Location
= Year
• Enable Low Thermal Resistance
• Simplified Vehicle Assembly
WW
NNN
= Work Week
= Serial Number
ORDERING INFORMATION
See detailed ordering and shipping information on page 10
of this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 3
NXV08A170DB2/D
NXV08A170DB2
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin Number
Pin Name
Q2LG
Q2LS
Pin Description
1
2
Low side MOSFET (Q2) Gate
Low side MOSFET (Q2) source sense
Thermistor 1
3
NTC+
NTC−
Shunt N
Shunt P
Q1HS
VLINK
Q1HG
B+
4
Thermistor 2
5
Shunt N
6
Shunt P
7
High side MOSFET (Q1) source sense
B+ Sense
8
9
High side MOSFET (Q1) Gate
B+ connection
10
11
12
GND
GND connection
POUT
Phase connection
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2
NXV08A170DB2
Block Diagram
VLINK
B+
Q1
Q1HG
Q1HS
SHUNT
POUT
SHUNT P
SHUNT N
Q2
C3
Q2LG
NTC+
GND
NTC−
Q2LS
Figure 2. Schematic
Solder
Flammability Information
All materials present in the power module meet UL
Solder used is a lead free SnAgCu alloy.
flammability rating class 94V−0.
Compliance to RoHS Directives
The power module is 100% lead free and RoHS compliant
2000/53/C directive.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
80
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
20
V
I
Drain Current Continuous (Note 1)
Single Pulse Avalanche Energy (Note 2)
Maximum Junction Temperature
Storage Temperature Range
Isolation Voltage
200
A
D
E
AS
685
mJ
°C
T
175
J(max)
T
−40 ~ +125
2000
°C
STG
V
ISO
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Defined by design, not subject to production testing. The value is the result of the calculation, Min (package limit max current, Silicon limit
max current) where the silicon limit current is calculated based on the maximum value which is not to exceed T = 175°C on maximum thermal
J
limitation and on resistance.
2. Starting T = 25°C, L = 0.47 mH, I = 54 A, V = 80 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
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3
NXV08A170DB2
THERMAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
R
Thermal Resistance, Junction−to−Case (Note 3)
−
−
0.82
K/W
q
JC
3. Test method compliant with MIL−STD−883−1012.1, case temperature measured below the package at the chip center. Cosmetic oxidation
and discolor on the DBC surface is allowed.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameters
Test Conditions
= 250 mA, V = 0 V
Symbol
Min
80
−
Typ
−
Max
−
Unit
V
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Threshold Voltage
Body Diode Forward Voltage of MOSFET
Drain−to−Source On Resistance, Q1
Drain−to−Source On Resistance, Q2
I
B
VDSS
D
GS
V
V
V
= 80 V, V = 0 V
I
−
1
mA
nA
V
DS
GS
GS
GS
DSS
=
20 V
I
−
−
100
4.0
1.2
0.99
1.35
2.40
GSS
= V , I = 250 mA
V
GS(th)
2.0
−
−
DS
D
I
I
= 80 A, V = 0 V
V
SD
0.8
0.66
0.90
1.75
V
SD
GS
= 80 A, V = 10 V
R
R
−
mW
mW
mW
D
GS
DS(ON)Q1
DS(ON)Q2
(Note 4)
−
Drain−to−Source On Resistance,
Module Level Q1
R
R
−
DS(ON) Module Q1
Drain−to−Source On Resistance,
Module Level Q2
−
1.75
2.40
mW
DS(ON) Module Q2
4. All bare die MOSFETs have same die size and same level of R
value. However the different R
DS(ON)
values listed in the datasheet
DS(ON)
DS(ON)
are due to the different access points available inside the module for R
measurement. Q1 (High side FET) has shorter R
DS(ON)
measurement path in the layout, in this reason, R
value of Q1 can be used for simple power loss calculation.
DS(ON)
Resistance Measurements Methods
MOSFET MEASUREMENTS
+ Force
− Force
Phase
11
+ Sense
− Sense
Q1 Sorce
5
+ Force
Phase
11
− Force
GND
10
+ Sense
− Sense
Q1
B+
9
Vlink
8
Q2
Q1 Source Q2 Source
PIN#
PIN#
5
2
MODULE PATH MEASUREMENTS
+ Force
− Force
Phase
11
+ Sense
− Sense
Phase
11
+ Force
Phase
11
− Force
GND
10
+ Sense
Phase
11
− Sense
GND
10
Q1
B+
9
B+
9
Q2
PIN#
PIN#
CURRENT SENSE RESISTOR
Symbol
Parameter
Min
Typ
0.304
Max
Unit
R
Current Sense Resistor, Id = 80 A (Note 5)
0.293
0.317
mW
SHUNT
5. Except resistance value, all the other characteristic is guaranteed by supplier.
COMPONENTS
Component
Specification
Quantity
Type
MOSFET
80 V Bare die reference discrete part,
FDBL86361_F085
2
Bare Die
Current Sense Resistor
Capacitor
0.3 mW
DC 100 V, 68000 pF
10 kW
1
2
1
Discrete
Discrete
Discrete
NTC
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4
NXV08A170DB2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Input Capacitance
Symbol
Test Condition
Min
Typ
Max
Unit
C
V
= 40 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
14000
9450
100
2.9
−
−
−
−
−
−
−
−
pF
pF
pF
W
iss
DS
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
f = 1 MHz
g
Total Gate Charge
Q
V
GS
V
GS
V
DD
= 0 V to 10 V
= 0 V to 2.7 V
V = 64 V,
DD
195
35
nC
nC
nC
nC
g(tot)
I
D
= 80 A
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
ON CHARACTERISTICS
Turn−On Time
Q
g(th)
Q
= 64 V, I = 80 A
66
gs
gd
D
Q
45
t
on
V
V
= 48 V, I = 80 A
−
−
−
−
−
−
250
65
−
−
−
−
−
−
ns
ns
ns
ns
ns
ns
DD
D
= 10 V, R
= 6 W
GS
GEN
Turn−On Delay Time
t
t
d(on)
(Note 6)
Turn−On Rise Time
t
r
184
153
123
276
Turn−Off Delay Time
d(off)
Turn−Off Fall Time
t
f
Turn−Off Time
t
off
BODY DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
T
V
SD
= 64 V, I = 125 A, dI/dt = 100 A/ms
−
−
112
208
−
−
ns
rr
SD
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. By characterization, the measurement is limited by test set up.
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5
NXV08A170DB2
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
240
200
160
120
80
V
GS
= 10 V
40
R
q
= 0.82°C/W
JC
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , Case Temperature [5C]
C
T , Case Temperature [5C]
C
Figure 3. Normalized Power Dissipation
vs. Case Temperature
Figure 4. Maximum Continuous Drain
Current vs. Case Temperature
300
240
180
300
100
Pulse duration = 80 ms
Duty cycle = 0.5% MAX
V
0 V
GS =
V
DD =
5 V
10
1
T
175°C
J =
T
J =
25°C
T
J =
25°C
120
60
0.1
0.01
T
J =
175°C
T
J =
−55°C
0
0.001
2
3
4
5
6
7
0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
, Gate to Source Voltage [V]
, Body Diode Forward Voltage [V]
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Forward Diode Characteristics
250
200
150
250
200
150
V
GS
5 V
15 V Top
10 V
8 V
7 V
6 V
V
GS
15 V Top
10 V
8 V
7 V
6 V
5 V
5.5 V
5 V Bottom
5.5 V
5 V Bottom
100
50
100
50
80 ms Pulse Width
T
J =
25°C
80 ms Pulse Width
T
J =
175°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
Figure 7. Saturation Characteristics (255C)
Figure 8. Saturation Characteristics (1755C)
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6
NXV08A170DB2
TYPICAL CHARACTERISTICS (continued)
20
16
1.8
I
80 A
I
80 A
Pulse duration = 80 ms
Duty cycle = 0.5% MAX
D =
D =
V
10 V
GS =
1.6
1.4
1.2
1.0
12
8
T
175°C
J =
T
J =
25°C
4
0.8
0.6
0
2
4
6
8
10
−75 −50 −25
0
25 50
75 100 125 150 175
V
GS
, Gate to Source Voltage [V]
T , Junction Temperature [5C]
J
Figure 9. RDSON vs. Gate Voltage
Figure 10. Normalized RDSON vs. Junction
Temperature
1.4
1.2
1.0
0.8
0.6
95
90
V
D =
V
I
V
5 mA
= 0 V
GS = DS
D =
I
250 mA
GS
85
80
0.4
0.2
−75
−25
25
75
125
175
−75
−25
25
75
125
175
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 11. Normalized VGS(TH) vs. Temperature
Figure 12. Breakdown Voltage vs. Temperature
10
8
100000
10000
1000
V
40 V
DD =
C
iss
C
oss
V
DD =
64 V
V
20 V
DD =
6
4
C
rss
100
10
2
0
f = 100 KHz
GS =
V
0 V
0.1
1
10
0
30
60
90
120
150
180
210
Q , Gate Charge [nC]
g
V
DS
, Drain to Source Voltage [V]
Figure 13. Capacitance Variation
Figure 14. Gate Charge
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NXV08A170DB2
TYPICAL CHARACTERISTICS (continued)
1000
100
1,5
1,2
0,9
0,6
0,3
I
V
= 100 mA
D
= 0 V
GS
10
1
0.001 0.01
0.1
1
10
100
1000 10000
−75
−25
25
75
125
175
t
, Time in Avalanche [ms]
AV
T , Junction Temperature [5C]
J
Refer to onsemi Application Notes AN7514 and AN7515.
Figure 15. Unclamped Inductive Switching
Capability
Figure 16. Forward Diode Characteristic
10000
1000
100
10
For temperatures above 25°C
Derate peak current as follows:
100 us
1 ms
ǒ175 * TCǓ
@ Ǹ
I + I
25
150
SINGLE PULSE
10 ms
1000
R
= 0.82°C/W
25°C
Limited I
NOTES:
999 A
q
JC
DM
T
C =
100 ms/DC
1
R
DS(on)
Limit
R
q
= 0.82°C/W
JC
Thermal Limit
Package Limit
Peak T = P
× Z (t) + T
q
JC
J
DM
C
Duty Cycle, D = t /t
Single Pulse
0.01 0.1
1
2
0.1
100
0.000001 0.00001 0.0001
0.1
1
10
100
0.001
1
V
DS
, Drain−Source Voltage [V]
t, Pulse Width [sec]
Figure 17. Safe Operation Area
Figure 18. Peak Current Capability
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NXV08A170DB2
TYPICAL CHARACTERISTICS (continued)
100000
10000
1000
100
10
1E−05
0,0001
0,001
0,01
0,1
1
t, Rectangular Pulse Duration [s]
Figure 19. Peak Power Capability
1
Duty cycle = 0.5
0.2
0.1
0,1
0,01
0.05
0.02
NOTES:
Z
R
(t) = r(t) × R
q
q
JC
JC
0.01
= 0.82°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
× Z (t) + T
q
JC C
J
DM
Single pulse
1
2
0,001
0,00001
0,0001
0,001
0,01
0,1
1
t, Pulse Time [s]
Figure 20. Maximum Transient Thermal Impedance
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NXV08A170DB2
PACKAGE DIMENSIONS
Figure 21. Flatness Measurement Position
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Device Flatness
Mounting Torque
Weight
Test Conditions
Min
0
Typ
−
Max
100
1.4
−
Units
um
Refer to the package dimensions
Mounting screw − M3, Recommended 0.7 N−m
0.6
−
−
N−m
g
10
−
Compression Test
Maximum load, test speed: 0.5 mm/min (Note 7)
−
22
kN
7. Guaranteed by experiment, valid only in confirmed condition.
PACKAGE MARKING AND ORDERING INFORMATION
Pb−Free and
RoHS Compliant
Device
Part Number
Package
Packing Method
NXV08A170DB2
NXV08A170DB2
APM12−CBA
Yes
Tray
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
APM12−SERIES AUTOMOTIVE MODULE
CASE MODBG
ISSUE B
DATE 16 DEC 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
ZZZ = Lot ID
*This information is generic. Please refer to
AT
Y
= Assembly & Test Location
= Year
XXXXXXXXXXXXXXXX
ZZZ ATYWW
NNNNNNN
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34474H
APM12−SERIES AUTOMOTIVE MODULE
PAGE 1 OF 1
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