PMEG2015EA [NEXPERIA]

Low VF (MEGA) Schottky barrier diodeProduction;
PMEG2015EA
型号: PMEG2015EA
厂家: Nexperia    Nexperia
描述:

Low VF (MEGA) Schottky barrier diodeProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
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use http://www.nexperia.com  
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMEG2015EA  
Low VF (MEGA) Schottky barrier  
diode  
Product data sheet  
2004 Feb 03  
Supersedes data of 2003 May 20  
NXP Semiconductors  
Product data sheet  
Low VF (MEGA) Schottky barrier diode  
PMEG2015EA  
FEATURES  
PINNING  
Forward current: 1.5 A  
PIN  
1
DESCRIPTION  
Reverse voltage: 20 V  
cathode  
Ultra high-speed switching  
Very low forward voltage  
Very small plastic SMD package.  
2
anode  
APPLICATIONS  
1
2
1
2
Ultra high-speed switching  
Voltage clamping  
sym001  
Protection circuits.  
Marking code: S5.  
DESCRIPTION  
The marking bar indicates the cathode.  
Planar Maximum Efficiency General Application (MEGA)  
Schottky barrier diode with an integrated guard ring for  
stress protection, encapsulated in a SOD323 (SC-76) very  
small SMD plastic package.  
Fig.1 Simplified outline (SOD323; SC-76) and  
symbol.  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
plastic surface mounted package; 2 leads  
VERSION  
SOD323  
PMEG2015EA  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
IF  
continuous reverse voltage  
continuous forward current  
non-repetitive peak forward current  
repetitive peak forward current  
storage temperature  
20  
V
Ts < 55 °C  
1.5  
A
IFSM  
IFRM  
Tstg  
Tj  
tp = 8 ms square wave  
10  
A
tp = 1 ms; δ = 0.25  
4.5  
A
65  
+150  
125  
+125  
°C  
°C  
°C  
junction temperature  
Tamb  
operating ambient temperature  
65  
2004 Feb 03  
2
NXP Semiconductors  
Product data sheet  
Low VF (MEGA) Schottky barrier diode  
PMEG2015EA  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
see Fig.2; note 1  
TYP.  
MAX.  
UNIT  
VF  
continuous forward voltage  
IF = 10 mA  
IF = 100 mA  
IF = 1000 mA  
IF = 1500 mA  
see Fig.3; note 1  
VR = 5 V  
240  
270  
mV  
300  
480  
560  
350  
550  
660  
mV  
mV  
mV  
IR  
continuous reverse current  
diode capacitance  
5
10  
20  
50  
25  
μA  
μA  
μA  
pF  
VR = 8 V  
7
VR = 15 V  
10  
19  
Cd  
VR = 5 V; f = 1 MHz;  
see Fig.4  
Note  
1. Pulse test: tp = 300 μs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient  
note 1  
note 2  
note 3  
450  
210  
90  
K/W  
K/W  
K/W  
Rth(j-s)  
thermal resistance from junction to solder point  
Notes  
1. Refer to SC-76 (SOD323) standard mounting conditions.  
2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm.  
3. Soldering point of cathode tab.  
2004 Feb 03  
3
NXP Semiconductors  
Product data sheet  
Low VF (MEGA) Schottky barrier diode  
PMEG2015EA  
GRAPHICAL DATA  
MLE111  
MHC312  
4
5
10  
10  
handbook, halfpage  
handbook, halfpage  
I
I
F
(mA)  
R
(μA)  
(1)  
4
3
10  
10  
(1)  
(2)  
(3)  
(2)  
(3)  
2
3
10  
10  
2
10  
10  
10  
1
1  
10  
1
0
0
0.2  
0.4  
0.6  
5
10  
15  
20  
25  
V
(V)  
F
V
(V)  
R
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Reverse current as a function of reverse  
voltage; typical values.  
MHC313  
80  
handbook, halfpage  
C
d
(pF)  
60  
40  
20  
0
0
5
10  
15  
20  
V
(V)  
R
Tamb = 25 °C; f = 1 MHz.  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
2004 Feb 03  
4
NXP Semiconductors  
Product data sheet  
Low VF (MEGA) Schottky barrier diode  
PMEG2015EA  
PACKAGE OUTLINE  
Plastic surface-mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
03-12-17  
06-03-16  
SOD323  
SC-76  
2004 Feb 03  
5
NXP Semiconductors  
Product data sheet  
Low VF (MEGA) Schottky barrier diode  
PMEG2015EA  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Feb 03  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R76/02/pp7  
Date of release: 2004 Feb 03  
Document order number: 9397 750 12628  

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