PSMN047-100NSE [NEXPERIA]
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed specifically for high power PoE applicationsDevelopment;型号: | PSMN047-100NSE |
厂家: | Nexperia |
描述: | N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed specifically for high power PoE applicationsDevelopment |
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PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with
enhanced SOA in DFN2020 package. Designed specifically
for high power PoE applications
21 July 2023
Preliminary data sheet
1. General description
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems
capable of delivering up to 90 W to each powered device (PD). Such solutions place increased
demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management
and power density requirements. PSMN047-100NSE is designed specifically for high power PoE
applications.
2. Features and benefits
•
Enhanced safe operating area (SOA) for superior linear mode operation
•
•
•
Low RDSon for low I2R conduction losses
2 mm x 2 mm space-saving DFN2020 package, 60% smaller than LFPAK33
Very low IDSS leakage
3. Applications
•
•
•
•
High power PoE applications (60 W and higher)
IEEE802.3at and proprietary PoE solutions
Fault tolerant load switch - Inrush management and eFuse applications
Battery management applications
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
100
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
-
-
-
-
ID
VGS = 10 V; Tmb = 25 °C; #unique_5/
unique_5_Connect_42_idaaa-036986
18.4
A
Ptot
total power dissipation Tmb = 25 °C; #unique_5/
unique_5_Connect_42_id03aa16
-
-
-
42
W
Tj
junction temperature
-55
175
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 5 A;
Tj = 25 °C; #unique_6/
unique_6_Connect_42_idaaa-036993
-
-
45
70
53.4
85
mΩ
mΩ
VGS = 10 V; ID = 5 A;
Tj = 100 °C; #unique_6/
unique_6_Connect_42_idaaa-029656
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 5 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; #unique_6/
unique_6_Connect_42_idaaa-036994;
#unique_6/
0.4
4.4
1.5
8.9
3.5
nC
nC
QG(tot)
13.3
unique_6_Connect_42_id003aaa508
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
Symbol
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
Parameter
Conditions
Min
Typ
Max
Unit
ID = 10.6 A; Vsup ≤ 100 V; RGS = 50 Ω; [1]
VGS = 10 V; Tj(init) = 25 °C;
unclamped; tp = 20 µs; #unique_5/
unique_5_Connect_42_idaaa-036987
-
-
13.8
mJ
source avalanche
energy
Source-drain diode
Qr
recovered charge
IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Tj = 25 °C; #unique_6/
unique_6_Connect_42_id003aal160
-
26
-
nC
[1] Protected by 100% test
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
G
S
D
D
D
S
2
drain
1
6
5
4
D
S
3
gate
7
2
4
souce
drain
G
3
8
5
6
drain
mbb076
Transparent top view
7
drain
DFN2020M-6 (SOT1220-2)
8
souce
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN047-100NSE
DFN2020M-6 plastic thermal enhanced ultra thin small outline package; SOT1220-2
no leads; 6 terminals; body 2 x 2 x 0.65 mm
7. Marking
Table 4. Marking codes
Type number
Marking code
ZT
PSMN047-100NSE
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 1
junction to mounting
base
-
3.2
3.6
K/W
Rth(j-a)
thermal resistance from Fig. 2
-
-
63
-
-
K/W
K/W
junction to ambient
Fig. 3
239
©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
2 / 7
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
aaa-036989
10
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
1
0.1
0.05
0.02
t
p
single shot
-1
P
10
δ =
T
t
t
p
T
-2
10
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 1. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-037076
aaa-037077
Copper square 25.4 mm square; 70 μm thick on
FR4 board
70 μm thick copper on FR4 board
Fig. 3. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 2. PCB layout for thermal resistance from junction
to ambient
©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
3 / 7
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
9. Package outline
DFN2020M-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220-2
*(6x)
B
E
A
pin 1
index area
A
D
A
1
detail X
u
C
2x
u
C
2x
seating plane
C
v
w
B
C A
C
E
(6x)
L
2
y
1
y
C
C
4
5
6
3
2
D
2
b (6x)
K
e
1
v
B
C A
C
e
e
w
e
2
D
1
1
pin 1
index area
Gx45°
X
E
1
0
2 mm
G
scale
e
Dimensions (mm are the original dimensions)
Unit
A
A
b
D
2
D
D
E
2
E
E
e
e
2
K
L
u
v
w
y
y
1
1
1
2
1
2
1
min 0.55
0
0.25
1.0
1.1
1.2
0.31
0.36
0.41
1.1 0.6
1.2 0.7 0.65 0.71 0.28
1.3 0.8
0.2 0.20
0.15
(ref)
nom
max
mm
0.60 0.02 0.30
0.65 0.04 0.35
0.25 0.05 0.1 0.05 0.05 0.05
0.30
Note
1. Dimension A is including plating thickness.
2. * Visible depend upon used manufacturing technology.
sot1220-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
- - -
JEITA
20-03-31
20-04-01
SOT1220-2
Fig. 4. Package outline DFN2020M-6 (SOT1220-2)
©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
4 / 7
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
10. Soldering
Footprint information for reflow soldering of DFN2020M-6 package
SOT1220-2
2.6
1.3
1.2
0.2
0.5
0.4
0.3
0.45
0.05
0.45 0.35 0.25
0.2 0.3
0.4
0.2 1.1 1.2
2.3
0.65
0.21 0.11
0.36 0.46 0.56
0.7
0.8
0.9
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder land
Dimensions in mm
20-03-17
20-06-17
Issue date
sot1220-2_fr
Fig. 5. Reflow soldering footprint for DFN2020M-6 (SOT1220-2)
©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
5 / 7
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
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11. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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[1][2]
status [3]
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©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
6 / 7
Nexperia
PSMN047-100NSE
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed
specifically for high power PoE applications
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Thermal characteristics............................................... 2
9. Package outline............................................................ 4
10. Soldering..................................................................... 5
11. Legal information........................................................6
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 July 2023
©
PSMN047-100NSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Preliminary data sheet
21 July 2023
7 / 7
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