PSMN1R1-25YLC [NXP]
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8); NextPower 25 V和30 V的MOSFET LFPAK （电SO8 ）
| 型号： | PSMN1R1-25YLC |
| 厂家： | 
NXP |
| 描述： | NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) |
| 文件： | 总8页 (文件大小：1803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NextPower MOSFETs
Smaller, Faster, Cooler
NextPower 25 V & 30 V MOSFETs
in LFPAK(Power-SO8)
NXP introduces a range of high performance
N-channel, logic-level MOSFETs in LFPAK
As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the
higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find
that the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important
parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…
Many competitors focus only on optimising RDS(on) and Qg. As Qg gets lower then losses due to Qoss and Qgd become
more significant. NextPower uses Superjunction technology to provide the optimum balance between low RDS(on), low
Qoss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and
low Qoss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest RDS(on)
with sub 1 mΩ types at both 25 V and 30 V.
LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other
Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where
high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect
solder defects as is common with QFN style Power-SO8 packages.
Key benefits
} Optimum switching performance under light & heavy
load conditions
} High efficiency in power switching applications
} Industry’s lowest RDS(on) Power-SO8 - Less than 1 mΩ
at 25 V and 30 V
} LFPAK package for compatibility with other vendor
Power-SO8 types
} Low Qoss for reduced output losses between DRAIN &
SOURCE
} Eliminates costly X-ray inspection – LFPAK solder joints
can be optically inspected
} Low Qgd for reduced switching losses and high frequency
switching
Key applications
} 20 V rated GATE provides better tolerance to voltage
transients than lateral MOSFET types
} Superior ‘Safe Operating Area’ performance compared
to other Trench MOSFET vendors
} Synchronous buck regulators
} DC-DC conversion
} Voltage regulator modules (VRM)
} Power OR-ing
} Optimised for 4.5 V gate drive voltage
2
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
Benefits of Superjunction technology
Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story.
The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing
the six most important MOSFET parameters required for high-performance & high reliability switching applications. The
outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph
represents a weakness.
} Low RDS(on) gives low I2R losses and superior performance
when used in a SYNC FET or power OR-ing application
} Low Qoss gives reduced losses between the drain
& source terminals since the energy stored in
} Low Miller charge (QGD) gives reduced switching losses
between the MOSFET’s drain & source terminals when
the MOSFET turns ON or turns OFF
} Low gate charge (QG) gives reduced losses in the gate
drive circuit since less energy is required to turn the
MOSFET ON & OFF
the output capacitance (Coss) is wasted whenever
the voltage changes across the output terminals
} SOA performance provides tolerance to overload & fault
conditions. The graph shows the maximum allowable
current for a 1 mS pulse at VDS=10 V
} Superior junction temperature rating, Tj(max), is proof that
LFPAK is the most rugged Power-SO8 package available.
LFPAK is the best choice for demanding environments
and where high reliability is required
Comparison of NextPower technology with key competitor types
R
max
DS(on)
@ V = 4.5 V
gs
Tj(max)
Qoss FOM
NXP
Compeꢀtor A
Compeꢀtor B
Combined QG &
QGD FOM
SOA raꢀng
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
3
Superjunction technology
NextPower MOSFETs use ‘Superjunction’ silicon technology to
deliver the optimum balance between low RDS, low QG(tot), low
QGD, high SOA performance and low Coss at 25 V and 30 V.
NextPower uses an optimized balance of the different
resistance elements in the MOSFET to achieve a lower
on-resistance for every cell. The low cell resistance means that
NextPower types typically require fewer cells than competitor
devices to achieve the same RDS(on), and a lower cell count
provides lower QG(tot), low QGD, low Coss and superior ‘Safe
operating area’ ruggedness.
Superjunction technology combines the benefits of a lateral
MOSFET, (low Qg(tot) and low QGD) with the benefits of a
Trench-MOSFET (low RDS(on) and 20 V rugged GATE rating)
resulting in a uniquely balanced specification.
Source
NextPower technology uses p-Type
pillars to improve the breakdown
voltage in the OFF state, and a heavily
doped n-Type drift region to achieve
exceptionally low ON resistance.
n+
Gate
p-Body
Since fewer cells are required to
achieve a given R rating, then gate
charge (QG), MilleDrScharge (QGD),
output capacitance (Coss) are all
reduced and optimum ruggedness
(denoted by the safe operating area
characteristics) is achieved.
n-Type
DRIFT REGION PILLARS
p-Type
Drain
NextPower types – parametric data
The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low RDS(on) types are also highly
recommended for Power OR-ing applications and low voltage isolated power supply topologies.
25 V NextPower types
RDS(on)typ
VGS = 4.5 V (mΩ)
QG(typ)
VGS = 4.5 V (nC)
QGD(typ)
VGS = 4.5 V (nC)
Type
Voltage (V)
COSS (pF)
PSMN0R9-25YLC
PSMN1R1-25YLC
PSMN1R2-25YLC
PSMN1R7-25YLC
PSMN1R9-25YLC
PSMN2R2-25YLC
PSMN2R9-25YLC
PSMN3R2-25YLC
PSMN3R7-25YLC
PSMN4R0-25YLC
25
25
25
25
25
25
25
25
25
25
0.95
1.2
51
39
14
11
8.3
7.8
7.4
5.2
4.4
4
1437
1121
994
880
761
617
501
462
370
354
1.35
2
31
28
2.2
27
2.6
18
3.45
3.7
16
14
4.25
4.5
10.1
10.9
3
3.5
4
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
30 V NextPower types
RDS(on)typ
VGS = 4.5 V (mΩ)
QG(typ)
VGS = 4.5 V (nC)
QGD(typ)
VGS = 4.5 V (nC)
Type
Voltage (V)
COSS (pF)
PSMN1R0-30YLC
PSMN1R2-30YLC
PSMN1R5-30YLC
PSMN2R2-30YLC
PSMN2R6-30YLC
PSMN3R2-30YLC
PSMN3R7-30YLC
PSMN4R1-30YLC
PSMN4R5-30YLC
30
30
30
30
30
30
30
30
30
1.1
1.35
1.65
2.3
50
38
14.6
11.6
8.6
8
1210
977
860
651
549
432
380
316
288
30
26
3.1
18
5.5
4.1
4.2
3.5
2.85
3.75
4.25
4.75
5.1
14.2
14
11
9.6
Benchmarking
Comparing NXP NextPower with NXP Trench 6 technology
Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types:
30 V NextPower types
RDS(on)typ
VGS = 4.5 V (mΩ)
QG(typ)
VGS = 4.5 V (nC)
QGD(typ)
VGS = 4.5 V (nC)
Type
Voltage (V)
COSS (pF)
PSMN1R5-30YL
PSMN1R5-30YLC
PSMN4R0-30YL
PSMN4R5-30YLC
30
30
30
30
1.8
1.65
3.7
36
30
18
9.6
8.7
8.6
1082
860
469
288
4.3
5.1
2.85
Test conditions
} Input Voltage: 12 V
} Output Voltage: 1.2 V
} 1 phase
} Frequency: 500 KHz
} Air flow: 200 LFM
NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC
Trench 6: PSMN4R0-30YL / PSMN1R5-30YL
0
5
10
15
20
25
30
ILOAD (Amps)
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
5
Comparing NextPower with a leading competitor
Benchmarking tests show that NextPower types deliver 1% efficiency gains compared to the nearest competitor types:
Test conditions
PSMN4R0-25YLC/PSMN1R1-25YLC
} Input Voltage: 12 V
Competitor
} Output Voltage: 1.2 V
} 1 phase
} Frequency: 500 KHz
} Air flow: 200 LFM
0
5
10
15
20
25
30
ILOAD (Amps)
Safe Operating Area comparison
10
9
8
7
6
5
4
3
2
1
NXP
Competitor 1
Competitor 2
0
NXP Trench 6 and previous generation
from competition
NXP NextPower and latest generation
from competition
Condition: SOA Drain current (Amp) @ Vds=10 V, 10 ms pulse for a 5 mΩ (@ 10 V) in Power SO8
Why Choose LFPAK?
} Reduced electrical resistance and inductance
} Outstanding thermal performance
} Rugged design, qualified to AEC-Q101
(stringent automotive standard)
} Easy to handle, solder and inspect
} Power-SO8 footprint compatible
6
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
NextPower types - Coming in Q3-2011
Further NextPower types are planned for release in Q3-2011. Preliminary data is provided in the tables below. These types are
recommended for control-FET applications in synchronous-buck regulators. YLB types have an integrated snubber circuit to
further reduce spiking levels for critical applications.
RDS(on)typ
VGS = 4.5 V (mΩ)
RDS(on)typ
VGS = 4.5 V (mΩ)
Type
Voltage (V)
Type
Voltage (V)
PSMN6R0-30YLB
PSMN6R0-30YLC
PSMN7R0-30YLC
PSMN8R6-30YLC
PSMN011-30YLC
PSMN012-30YLC
30
30
30
30
30
30
6.7
7.6
PSMN5R0-25YLB
PSMN5R0-25YLC
PSMN6R0-25YLC
PSMN7R3-25YLC
PSMN9R0-25YLC
PSMN011-25YLC
25
25
25
25
25
25
6.1
6.6
8.5
7.3
10.3
11.7
13.8
8.9
10.7
12.7
types in bold red italic underline represent products in development
Part numbering for NXP MOSFETs
MOSFET
MOSFET
type
N-ch or
P-ch
MOSFET voltage
BVDS
Gate threshold
NextPower
special features
MOSFET BRAND NAME
on-resistance
RDS(on)
-
Package type
voltage
P
S
M
N
1
R
7
-
-
-
-
-
-
25
Y
L
C
B = D2PAK
SOT404
C = Optimised
for Qg(fom)
N = N-ch
R95 = 0.95 mΩ
1R7 = 1.7 mΩ
014 = 14 mΩ
125 = 125 mΩ
25 = 25 V
30 = 30 V
40 = 40 V
60 = 60 V
80 = 80 V
L = Logic-level
D = DPAK
SOT428
B = integrated
snubber
P = P-ch
S = Standard-level
X =
Dual N-ch
E = I2PAK
SOT226
Y =
Dual P-ch
K = SO8
SOT96
Z =
N-ch + P-ch
L = QFN3333
SOT873
Power Silicon Max
P = TO220
SOT78
-
100 = 100 V
Y = LFPAK
SOT669 &
SOT1023
-
-
110 = 110 V
120 = 120 V
X = TO220F
(FULLPACK)
SOT186A
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
7
www.nxp.com
© 2011 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: May 2011
Document order number: 9397 750 17100
Printed in the Netherlands
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