PSMN1R1-30PL [NEXPERIA]
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220Production;型号: | PSMN1R1-30PL |
厂家: | Nexperia |
描述: | N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220Production |
文件: | 总14页 (文件大小:743K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
2 April 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
•
•
3. Applications
DC-to-DC converters
Load switiching
Motor control
•
•
•
•
Server power supplies
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; Fig. 2
-
-
-
-
-
[1]
[2]
-
120
338
175
A
Ptot
Tj
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
-
1.1
1.5
1.3
1.8
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15
-
-
37
-
-
nC
nC
QG(tot)
118
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
-
1.9
J
source avalanche
energy
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN1R1-30PL
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN1R1-30PL
PSMN1R1-30PL
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
2 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
30
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
338
120
120
1609
175
175
260
W
A
ID
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
[1]
-
-
A
IDM
peak drain current
-
A
Tstg
Tj
storage temperature
junction temperature
peak soldering temperature
-55
-55
-
°C
°C
°C
Tsld(M)
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1609
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
1.9
J
[1] Continuous current is limited by package.
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
3 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
03aa16
003aaf774
120
500
ID
(A)
P
der
(%)
400
300
200
80
40
(1)
100
0
0
0
50
100
150
200
0
50
100
150
200
Tmb ( C)
T
(°C)
mb
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature.
003aaf773
104
ID
(A)
103
t =10
p
s
m
Limit RDSon = VDS / ID
100
s
m
102
10
1 ms
DC
10 ms
100 ms
1
10-1
10-1
1
10
102
V DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
0.44
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.22
K/W
©
PSMN1R1-30PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
4 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
Vertical in free air
-
60
-
K/W
003aaf772
1
Z
th(j-mb)
(K/W)
δ = 0.5
10-1
10-2
10-3
0.2
0.1
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
30
27
1.3
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.7
2.2
voltage
Fig. 10; Fig. 11
ID = 2 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
0.5
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
2.5
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
250
10
10
µA
µA
nA
nA
mΩ
500
100
100
1.3
IGSS
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
[1]
1.1
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PSMN1R1-30PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
5 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
1.2
1.4
mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
-
-
-
2.1
1.5
1.1
2.5
1.8
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
243
223
-
-
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
-
-
-
118
39
-
-
-
nC
nC
nC
QGS
gate-source charge
QGS(th)
pre-threshold gate-
source charge
22
QGS(th-pl)
post-threshold gate-
source charge
-
17
-
nC
QGD
gate-drain charge
-
-
37
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
VDS = 15 V; Fig. 14; Fig. 15
2.8
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
14850
2799
1215
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; RL = 0.2 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C
-
-
-
-
95
-
-
-
-
ns
ns
ns
ns
213
199
115
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.8
67
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 15 V
Qr
recovered charge
123
[1] Measured 3 mm from package.
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
6 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
003aaf762
003aaf763
300
75
g
I
fs
D
(S)
(A)
240
60
180
120
60
45
30
15
T = 175
j
C
T = 25 C
°
°
j
0
0
0
20
40
60
80
0
0.6
1.2
1.8
2.4
3
V
(V)
I
(A)
GS
D
Fig. 5. Forward transconductance as a function of
drain current; typical values
Fig. 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf764
003aad011
5
300
ID
10
3
R
DSon
)
4.5
(A)
(m
Ω
3.5
250
200
150
100
50
4
3
2
1
0
2.8
2.6
VGS (V) = 2.4
0
0
4
8
12
16
0
2
4
6
8
10
V
(V)
VDS (V)
GS
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN1R1-30PL
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Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
7 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
003aaf766
003aab271
105
10-1
ID
(A)
10-2
C
(pF)
C
iss
min
typ
max
10-3
10-4
10-5
10-6
C
rss
104
103
10-1
1
10
102
0
1
2
VGS (V)
3
V
(V)
GS
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 9. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aac982
003aad012
10
3
2.8
VGS (V) = 3
2.6
RDSon
(mΩ)
8
VGS(th)
(V)
max
2
6
4
2
0
typ
min
1
4.5
3.5
10
0
-60
0
100
200
300
ID (A)
0
60
120
180
Tj (°C)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
8 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
003aaf767
2
a
V
DS
I
D
1.5
V
GS(pl)
V
GS(th)
GS
1
V
Q
GS1
Q
GS2
0.5
Q
GS
Q
GD
Q
G(tot)
003aaa508
0
-60
Fig. 14. Gate charge waveform definitions
0
60
120
180
Tj ( C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf768
003aaf769
10
105
V
GS
(V)
C
(pF)
8
24V
C
C
iss
104
15V
= 6V
6
V
DS
oss
4
2
0
103
C
rss
102
10-1
0
100
200
300
(nC)
1
10
102
Q
V
(V)
G
DS
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
9 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
003aaf770
75
I
S
(A)
60
45
30
15
0
T = 175
C
°
T = 25 C
°
j
j
0
0.2
0.4
0.6
0.8
1
V
(V)
SD
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
10 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 18. Package outline TO-220AB (SOT78)
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
11 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
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whether the Nexperia product is suitable and fit for the
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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detailed and full information. For detailed and full information see the
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damage, costs or problem which is based on any weakness or default
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and the products or of the application or use by customer’s third party
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short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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Limited warranty and liability — Information in this document is believed
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or construed as an offer to sell products that is open for acceptance or the
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
12 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
grant, conveyance or implication of any license under any copyrights, patents
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the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
13 / 14
Nexperia
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 11
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 02 April 2014
©
PSMN1R1-30PL
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
2 April 2014
14 / 14
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