PSMN1R1-30YLE [NEXPERIA]
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56Production;型号: | PSMN1R1-30YLE |
厂家: | Nexperia |
描述: | N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56Production |
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中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with
enhanced SOA in LFPAK56
10 November 2022
Product data sheet
1. General description
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package
optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-
mode applications.
2. Features and benefits
•
•
•
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Optimized for low RDSon / low I2R conduction losses
LFPAK56 package for applications that demand the highest performance and reliability in a
30 mm2 footprint
•
•
•
Low leakage <1 µA at 25 °C
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
3. Applications
•
•
•
•
•
Hot swap in 12 V - 20 V applications
e-Fuse
DC switch
Load switch
Battery protection
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
[1]
-
265
192
175
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
-
1.01
1.28
1.26
1.8
mΩ
mΩ
VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 10
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13
2
9
18
46
nC
nC
QG(tot)
13
28
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
softness factor
S
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V; Tj = 25 °C; Fig. 16
-
1
-
[1] 265 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
mb
2
D
S
3
G
4
1
2 3 4
mb
mounting base; connected
to drain
mbb076
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN1R1-30YLE
LFPAK56;
Power-SO8
plastic, single-ended surface-mounted package; 4
terminals
SOT669
7. Marking
Table 4. Marking codes
Type number
Marking code
1E1L30Y
PSMN1R1-30YLE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Tj = 25 °C unless otherwise stated.
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
30
VDGR
VGS
-
30
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
192
265
202
1142
175
175
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
-
-
A
IDM
Tstg
Tj
peak drain current
storage temperature
junction temperature
-
A
-55
-55
°C
°C
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
2 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Symbol
Parameter
Conditions
Min
Max
Unit
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
192
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1142
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 25 A; Vsup ≤ 30 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 2 ms
[2]
[2]
-
-
1
J
IAS
non-repetitive avalanche Vsup ≤ 30 V; VGS = 10 V; Tj(init) = 25 °C;
115
A
current
RGS = 50 Ω
[1] 265 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Protected by 100% test.
03aa16
aaa-035434
120
300
250
200
150
100
50
I
D
(A)
P
der
(%)
80
40
0
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
T
(°C)
T
(°C)
mb
mb
VGS ≥ 10 V
(1) 265 A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
3 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
aaa-035435
4
10
I
D
(A)
3
2
10
Limit R
= V / I
DS
DSon
D
t
p
= 10 µs
10
100 µs
1 ms
10 ms
100 ms
DC
10
1
10 µs
100 µs
1 ms
10 ms
10
100 ms
DC
-1
2
10
1
10
V
DS
(V)
Tmb = 25 °C (solid black line);Tmb = 125 °C (red dashed line); IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
-
0.38
0.78
K/W
Rth(j-a)
thermal resistance from Fig. 5
-
-
42
85
-
-
K/W
K/W
junction to ambient
Fig. 6
aaa-035436
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
-2
-3
10
0.1
0.05
0.02
single shot
t
p
P
10
10
δ =
T
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
PSMN1R1-30YLE
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Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
4 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
aaa-027933
aaa-027935
Copper area 25.4 mm square; 70 µm thick on FR4
board
70 µm thick copper on FR4 board
Fig. 6. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 5. PCB layout for thermal resistance from junction
to ambient
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
30
27
1.2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 2 mA; VDS=VGS; Tj = 25 °C
voltage
1.87
2.2
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 150 °C
voltage variation with
-
-3.7
-
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 24 V; VGS = 0 V; Tj = 25 °C
VDS = 24 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
6.4
-
IGSS
-
100
100
1.26
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.01
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 11
-
-
2.3
mΩ
VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 10
-
-
1.28
-
1.8
3.3
mΩ
mΩ
VGS = 7 V; ID = 25 A; Tj = 150 °C;
Fig. 11
RG
gate resistance
f = 1 MHz; Tj = 25 °C
1.2
3
7.5
Ω
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13
13
28
-
28
62
32
46
102
-
nC
nC
nC
ID = 25 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
5 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Symbol
QGS
Parameter
Conditions
Min
3.5
1.6
Typ
13
6
Max
25
Unit
nC
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 12; Fig. 13
QGS(th)
pre-threshold gate-
source charge
12
nC
QGS(th-pl)
post-threshold gate-
source charge
1.9
7
13
nC
QGD
gate-drain charge
2
-
9
18
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 15 V; Tj = 25 °C;
Fig. 12; Fig. 13
3.5
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
2527 4211 6317 pF
1019 1699 2549 pF
reverse transfer
capacitance
80
296
710
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
-
35
87
24
32
38
-
-
-
-
-
ns
ns
ns
ns
nC
turn-off delay time
fall time
Qoss
output charge
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
-
-
-
0.79
31
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
ns
VDS = 15 V; Tj = 25 °C; Fig. 16
Qr
ta
recovered charge
[1]
23
-
reverse recovery rise
time
15.7
-
tb
S
reverse recovery fall
time
-
-
15.6
1
-
-
ns
softness factor
[1] includes capacitive recovery
aaa-035437
aaa-035438
300
4
3
2
1
0
I
D
R
DSon
(mΩ)
6 V
(A)
10 V
7 V
250
200
150
100
50
V
GS
= 5 V
4.5 V
3.5 V
0
0
1
2
3
V
4
0
2
4
6
8
10
12
14
(V)
16
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
6 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
aaa-035439
aaa-035440
275
30
I
R
(mΩ)
D
DSon
5 V
3.5 V 4.5 V
(A)
25
20
15
10
5
220
165
110
55
V
= 6 V
GS
150°C
3
25°C
7 V
10 V
0
0
0
1
2
4
5
6
V
7
(V)
8
0
50
100
150
200
250
(A)
300
I
GS
D
VDS = 8 V
Tj = 25 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-035467
aaa-035442
2.2
10
a
V
GS
(V)
8
6
4
2
0
1.8
24 V
1.4
1
15 V
V
= 6 V
DS
0.6
-60 -30
0
30
60
90 120 150 180
T (°C)
0
10
20
30
40
50
Q
60
(nC)
70
j
G
Tj = 25 °C; ID = 25 A
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
7 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
aaa-035443
4
10
C
(pF)
V
DS
C
C
iss
I
D
oss
V
V
GS(pl)
GS(th)
3
10
V
C
rss
GS
Q
GS2
Q
GS1
2
10
Q
Q
-1
2
GS
GD
10
1
10
10
V
DS
(V)
Q
G(tot)
003aaa508
VGS = 0 V; f = 1 MHz
Fig. 13. Gate charge waveform definitions
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aal160
aaa-035444
3
2
10
I
S
I
D
(A)
(A)
t
rr
10
t
t
b
a
0
10
0.25 I
RM
150°C
0.4
T = 25°C
j
I
RM
1
t (s)
0
0.2
0.6
0.8
1
(V)
1.2
V
SD
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
8 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
9 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
12. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
10 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
15-04-13
Issue date
15-04-16
sot669_fw
Fig. 19. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
11 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
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©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
12 / 13
Nexperia
PSMN1R1-30YLE
N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................12
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 November 2022
©
PSMN1R1-30YLE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
10 November 2022
13 / 13
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