PVD110-6 [NIEC]
PIM MODULE 11KW 200V; PIM模块11KW 200V
| 型号： | PVD110-6 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | PIM MODULE 11KW 200V |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TENTATIVE
PIM MODULE 11KW 200V
PVD110-6
Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber
For 11kw 200V Inverter
Approximate Weight : 400g
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
VRRM
VRSM
IO(AV)
IFSM
I2t
Rated Value
Unit
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Rectified Out –Put Current
Surge Forward Current
800
900
100
900
V
3 Phase
Rectification
Diode
A
I Squared t
4050
A2s
Critical Rate of Fall of Forward Current
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Off-State Voltage
Average Rectified Out-Put Current
Surge Forward Current
-di/dt
VDRM
VRSM
IO(AV)
ITSM
I2t
160(@ :IFM=60A, VR=500V)
A/µs
800
900
100
1000
V
A
I Squared t
5000
A2s
Switch
Thyristor
Critical Rate Of Rise Of Turn-On Current
Peak Gate Power
Average Gate Power
di/dt
PGM
PGM(AV)
IGM
100
5
1
2
A/µs
W
A
Peak Gate Current
Peak Gate Voltage
VGM
VRGM
VCES
VGES
IC
ICP
IF
IFM
10
5
600
+/- 20V
100
200
100
200
V
Peak Gate Reverse Voltage
Collector-Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
1ms
V
A
Inverter
IGBT
DC
Forward Current
1ms
Collector Power Dissipation
Collector-Emitter Voltage
Gate Emitter Voltage
DC
Collector Current
1ms
PC
390
600
+/- 20V
50
W
V
VCES
VGES
IC
Brake
IGBT
A
ICP
100
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Forward Current, DC
PC
VRRM
IF
IFSM
Tjw
Tstg
Viso
215
600
15
150
W
V
Snubber
Diode
A
Surge Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage(Terminal to Base)
-40 to +150°C(notes:+125 °C > Can not be biased.)
-40 to +125°C
°C
2500(@AC, 1minute), 3000(@AC, 1second)
V
Isolation Resistance(Terminal to Base, @DC=500V)
Mounting Torque(Module Base to Heatsink)
Riso
Ftor
500
(M4), 1.4
M.ohm
N·m
ELECTRICAL CHARACTERISTICS (Tc=25°C Unless otherwise noted)
Characteristic
Symbol
IR
VF
IDM
IRM
VTM
Test Condition
Tj=150°C, VRM=VRRM
IF=100A
Tj=125°C, VDM=VDRM
Tj=125°C, VRM=VRRM
IT=100A
Min. Typ. Max. Unit
3 Phase
Rectification Diode
Peak Reverse Current *1
Peak Reverse Voltage *1
Peak OFF-State Current
Peak Reverse Current
Peak On-State Voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
1.50
50
50
1.50
200
100
50
40
25
20
-
mA
-
µA
-
-
-
mA
V
Tj=-40°C
Tj=25°C
Tj=125°C
-
VD=6V
IT=1A
Gate Current to Trigger
IGT
mA
-
Switch Thyristor
-
Tj=-40°C
Tj=25°C
Tj=125°C
-
-
VD=6V
IT=1A
Gate Voltage to Trigger
VGT
V
-
Gate Voltage to Non-Trigger
Critical Rate Of Rise Of Off-State Voltage
VGD
dv/dt
0.25
500
V
V/µs
Tj=125°C, VD=2/3VDRM
-
TENTATIVE
Tj=125°C, VD=2/3VDRM
VRM=100V, dv/dt=20V/µs
-di/dt=20A/µs
Tj=25°C, VD=2/3VDRM
IG=200mA
Turn-Off Time
tq
-
100
-
µs
Turn-On Time
Delay Time
tgt
td
-
-
6
2
-
-
Switch Thyristor
-diG/dt=0.2A/µs
Rise Time
tr
-
4
-
Latching Current
Holding Current
IL
IH
-
-
100
80
-
-
mA
Collector-Emitter Out-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
ICES
IGES
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
-
-
-
4.0
-
-
-
-
-
-
-
-
-
-
4.0
-
-
-
-
-
2.1
-
10000
0.15
0.25
0.20
0.45
1.9
0.15
-
-
2.1
-
5000
0.15
0.25
0.20
0.45
-
1.0
0.5
2.6
8.0
-
0.30
0.40
0.35
0.7
2.4
0.25
1.0
0.5
2.6
8.0
-
mA
µA
V
V
pF
VCE(sat) IC=100A,VGE=15V
VCE(th) VCE=5V,IC=100mA
Cies VCE=10V,VGE=0V,f=1MHz
tr
ton
tf
toff
VF
trr
Inverter
IGBT
Rise Time
VCC= 300V
RL= 3 ohm
RG= 7.5 ohm
VGE= +/- 15V
Turn-On Time
Fall Time
Switching Time
µs
Turn-Off Time
Peak Forward Voltage
Reverse Recovery Time
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
IF=100A
V
µs
mA
µA
V
IF=100A,VGE=-10V, d/dt=100A/µs
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
ICES
IGES
VCE(sat) IC=50A,VGE=15V
VGE(th) VCE=5V,IC=50mA
Cies VCE=10V,VGE=0V,f=1MHz
tr
ton
tf
V
pF
Brake
IGBT
Rise Time
VCC= 300V
RL= 6 ohm
RG= 10 ohm
VGE= +/- 15V
0.3
0.4
0.35
0.7
2.5
Turn-on Time
Fall Time
Switching Time
µs
-
-
-
Turn-off Time
Peak Forward Voltage
toff
VF
Snubber
Diode
IF=15A
V
Reverse Recovery Time
trr
IF=15A, di/dt=50A/µs
-
-
0.3
µs
*1: per 1arm
ELECTRICAL CHARACTERISTICS (Tc=25°C Unless otherwise noted)
25°C
-
-
-
-
-
-
5.00
0.97
0.27
3375
3420
10
-
-
-
-
-
-
Resistance
k. ohm
75°C
125°C
25°C/50°C
25°C/85°C
Thermister
B-Value
K
s
Thermal Time Constant
THERMAL CHARACTERISTICS
Characteristic
Test Condition
Min. Typ. Max. Unit
3 Phase Rectification Diode
Switch Thyristor
Inverter IGBT
Inverter Free Wheeling Diode
Brake IGBT
-
-
-
-
-
-
-
-
-
-
0.50
0.45
0.32
0.70
0.58
R
th(j-c)
Thermal Impedance
Per :1 arm.
°C/W
Junction to Case
TENTATIVE
PVD110-6 OUTLINE DRAWING
(Dimensionsinmm)
CIRCUIT
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