LM4908MM [NSC]

10kV ESD Rated, Dual 120 mW Headphone Amplifier; 10kV的ESD额定,双120毫瓦耳机放大器
LM4908MM
型号: LM4908MM
厂家: National Semiconductor    National Semiconductor
描述:

10kV ESD Rated, Dual 120 mW Headphone Amplifier
10kV的ESD额定,双120毫瓦耳机放大器

放大器
文件: 总21页 (文件大小:931K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
February 2004  
LM4908  
10kV ESD Rated, Dual 120 mW Headphone Amplifier  
j
General Description  
Output power at 0.1% THD+N  
at 1kHz into 32  
75mW (typ)  
The LM4908 is a dual audio power amplifier capable of  
delivering 120mW per channel of continuous average power  
into a 16load with 0.1% (THD+N) from a 5V power supply.  
Features  
Boomer audio power amplifiers were designed specifically to  
provide high quality output power with a minimal amount of  
external components using surface mount packaging. Since  
the LM4908 does not require bootstrap capacitors or snub-  
ber networks, it is optimally suited for low-power portable  
systems.  
n Up to 10kV ESD protection on all pins  
n MSOP, SOP, and LLP surface mount packaging  
n Switch on/off click suppression  
n Excellent power supply ripple rejection  
n Unity-gain stable  
The unity-gain stable LM4908 can be configured by external  
gain-setting resistors.  
n Minimum external components  
Applications  
Key Specifications  
n Headphone Amplifier  
n Personal Computers  
n Portable electronic devices  
j
THD+N at 1kHz at 120mW  
continuous average output power  
into 16Ω  
0.1% (typ)  
0.1% (typ)  
j
THD+N at 1kHz at 75mW  
continuous average output power  
into 32Ω  
Typical Application  
20075201  
*Refer to the Application Information Section for information concerning proper selection of the input and output coupling capacitors.  
FIGURE 1. Typical Audio Amplifier Application Circuit  
Boomer® is a registered trademark of National Semiconductor Corporation.  
© 2004 National Semiconductor Corporation  
DS200752  
www.national.com  
Connection Diagrams  
SOP (MA) and MSOP (MM) Package  
20075202  
Top View  
Order Number LM4908MA, LM4908MM  
See NS Package Number M08A, MUA08A  
LLP (LQ) Package  
200752A2  
Top View  
Order Number LM4908LQ  
See NS Package Number LQB08A  
www.national.com  
2
Absolute Maximum Ratings (Note 3)  
θJC (MSOP)  
θJA (MSOP)  
θJC (SOP)  
θJA (SOP)  
θJC (LLP)  
θJA (LLP)  
56˚C/W  
210˚C/W  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
35˚C/W  
170˚C/W  
Supply Voltage  
6.0V  
−65˚C to +150˚C  
−0.3V to VDD + 0.3V  
Internally limited  
10.0kV  
15˚C/W  
Storage Temperature  
Input Voltage  
117˚C/W (Note 9)  
150˚C/W (Note 10)  
θJA (LLP)  
Power Dissipation (Note 4)  
ESD Susceptibility (Note 5)  
ESD Susceptibility (Note 6)  
Junction Temperature  
Soldering Information (Note 1)  
Small Outline Package  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
Thermal Resistance  
Operating Ratings  
Temperature Range  
TMIN TA TMAX  
Supply Voltage  
500V  
150˚C  
−40˚C T 85˚C  
A
2.0V VDD 5.5V  
Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli-  
ability” for other methods of soldering surface mount devices.  
215˚C  
220˚C  
Electrical Characteristics (Notes 2, 3)  
The following specifications apply for VDD = 5V unless otherwise specified, limits apply to TA = 25˚C.  
Symbol Parameter Conditions LM4908  
Units  
(Limits)  
Typ  
(Note 7)  
Limit  
(Note 8)  
2.0  
VDD  
Supply Voltage  
V (min)  
5.5  
V (max)  
IDD  
Supply Current  
VIN = 0V, IO = 0A  
1.6  
8
3.0  
mA (max)  
Ptot  
Total Power Dissipation  
Input Offset Voltage  
Input Bias Current  
VIN = 0V, IO = 0A  
VIN = 0V  
16.5  
50  
mW (max)  
VOS  
Ibias  
5
mV (max)  
10  
0
pA  
V
VCM  
Common Mode Voltage  
4.3  
67  
70  
0.1  
.3  
V
GV  
Io  
Open-Loop Voltage Gain  
Max Output Current  
Output Resistance  
Output Swing  
RL = 5kΩ  
dB  
mA  
<
THD+N 0.1 %  
RO  
VO  
RL = 32, 0.1% THD+N, Min  
RL = 32, 0.1% THD+N, Max  
Cb = 1.0µF, Vripple = 100mVPP  
f = 40Hz  
V
4.7  
90  
PSRR  
Power Supply Rejection Ratio  
Channel Separation  
,
dB  
Crosstalk  
THD+N  
RL = 32, f = 1kHz  
82  
dB  
Total Harmonic Distortion + Noise f = 1 kHz  
RL = 16,  
VO =3.5VPP (at 0 dB)  
0.05  
66  
%
dB  
RL = 32,  
VO =3.5VPP (at 0 dB)  
0.05  
66  
%
dB  
SNR  
fG  
Signal-to-Noise Ratio  
Unity Gain Frequency  
Output Power  
VO = 3.5Vpp (at 0 dB)  
Open Loop, RL = 5kΩ  
THD+N = 0.1%, f = 1 kHz  
RL = 16Ω  
100  
25  
dB  
MHz  
Po  
120  
75  
mW  
mW  
RL = 32Ω  
60  
THD+N = 10%, f = 1 kHz  
RL = 16Ω  
157  
99  
3
mW  
mW  
pF  
RL = 32Ω  
CI  
Input Capacitance  
3
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Electrical Characteristics (Notes 2, 3) (Continued)  
The following specifications apply for VDD = 5V unless otherwise specified, limits apply to TA = 25˚C.  
Symbol  
Parameter  
Conditions  
LM4908  
Units  
(Limits)  
Typ  
Limit  
(Note 8)  
200  
(Note 7)  
3
CL  
Load Capacitance  
Slew Rate  
pF  
SR  
Unity Gain Inverting  
V/µs  
Electrical Characteristics (Notes 2, 3)  
The following specifications apply for VDD = 3.3V unless otherwise specified, limits apply to TA = 25˚C.  
Symbol Parameter Conditions Conditions  
Units  
(Limits)  
Typ  
(Note 7)  
1.4  
Limit  
(Note 8)  
IDD  
VOS  
Po  
Supply Current  
VIN = 0V, IO = 0A  
mA (max)  
mV (max)  
Input Offset Voltage  
Output Power  
VIN = 0V  
5
THD+N = 0.1%, f = 1 kHz  
RL = 16Ω  
43  
30  
mW  
mW  
RL = 32Ω  
THD+N = 10%, f = 1 kHz  
RL = 16Ω  
61  
41  
mW  
mW  
RL = 32Ω  
Electrical Characteristics (Notes 2, 3)  
The following specifications apply for VDD = 2.6V unless otherwise specified, limits apply to TA = 25˚C.  
Symbol Parameter Conditions Conditions  
Units  
(Limits)  
Typ  
(Note 7)  
1.3  
Limit  
(Note 8)  
IDD  
VOS  
Po  
Supply Current  
VIN = 0V, IO = 0A  
mA (max)  
mV (max)  
Input Offset Voltage  
Output Power  
VIN = 0V  
5
THD+N = 0.1%, f = 1 kHz  
RL = 16Ω  
20  
16  
mW  
mW  
RL = 32Ω  
THD+N = 10%, f = 1 kHz  
RL = 16Ω  
34  
24  
mW  
mW  
RL = 32Ω  
Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which  
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit  
is given, however, the typical value is a good indication of device performance.  
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
A
JMAX JA  
allowable power dissipation is P  
= (T  
− T ) / θ . For the LM4908, T  
= 150˚C, and the typical junction-to-ambient thermal resistance, when board  
DMAX  
JMAX  
A
JA  
JMAX  
mounted, is 210˚C/W for package MUA08A and 170˚C/W for package M08A.  
Note 5: Human body model, 100pF discharged through a 1.5kresistor.  
Note 6: Machine Model, 220pF–240pF discharged through all pins.  
Note 7: Typicals are measured at 25˚C and represent the parametric norm.  
Note 8: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Datasheet min/max specification limits are guaranteed by design, test,  
or statistical analysis.  
Note 9: The given θ is for an LM4908 packaged in an LQB08A with the Exposed-DAP soldered to a printed circuit board copper pad with an area equivalent to  
JA  
that of the Exposed-DAP itself.  
Note 10: The given θ is for an LM4908 packaged in an LQB08A with the Exposed-DAP not soldered to any printed circuit board copper.  
JA  
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4
External Components Description (Figure 1)  
Components  
Functional Description  
The inverting input resistance, along with Rf, set the closed-loop gain. Ri, along with Ci, form a high  
pass filter with fc = 1/(2πRiCi).  
1. Ri  
The input coupling capacitor blocks DC voltage at the amplifier’s input terminals. Ci, along with Ri,  
create a highpass filter with fC = 1/(2πRiCi). Refer to the section, Selecting Proper External  
Components, for an explanation of determining the value of Ci.  
The feedback resistance, along with Ri, set closed-loop gain.  
2. Ci  
3. Rf  
This is the supply bypass capacitor. It provides power supply filtering. Refer to the Application  
Information section for proper placement and selection of the supply bypass capacitor.  
This is the half-supply bypass pin capacitor. It provides half-supply filtering. Refer to the section,  
Selecting Proper External Components, for information concerning proper placement and selection  
of CB.  
4. CS  
5. CB  
This is the output coupling capacitor. It blocks the DC voltage at the amplifier’s output and forms a high  
pass filter with RL at fO = 1/(2πRLCO)  
6. CO  
7. RB  
This is the resistor which forms a voltage divider that provides 1/2 VDD to the non-inverting input of the  
amplifier.  
Typical Performance  
Characteristics  
THD+N vs Frequency  
VDD = 2.6V, PWR = 15mW, RL = 8Ω  
THD+N vs Frequency  
VDD = 2.6V, PWR = 15mW, RL = 16Ω  
20075267  
20075268  
5
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Typical Performance Characteristics (Continued)  
THD+N vs Frequency  
THD+N vs Frequency  
VDD = 2.6V, PWR = 15mW, RL = 32Ω  
VDD = 3.3V, PWR = 25mW, RL = 8Ω  
20075269  
20075270  
THD+N vs Frequency  
THD+N vs Frequency  
VDD = 3.3V, PWR = 25mW, RL = 16Ω  
VDD = 3.3V, PWR = 25mW, RL = 32Ω  
20075271  
20075272  
THD+N vs Frequency  
THD+N vs Frequency  
VDD = 5V, PWR = 50mW, RL = 8Ω  
VDD = 5V, PWR = 50mW, RL = 16Ω  
20075273  
20075274  
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6
Typical Performance Characteristics (Continued)  
THD+N vs Frequency  
THD+N vs Frequency  
VDD = 5V, PWR = 50mW, RL = 32Ω  
VDD = 5V, VOUT = 3.5Vpp, RL = 5kΩ  
20075275  
20075276  
THD+N vs Output Power  
THD+N vs Output Power  
VDD = 2.6V, RL = 8, f = 1kHz  
VDD = 2.6V, RL = 16, f = 1kHz  
20075277  
20075278  
THD+N vs Output Power  
THD+N vs Output Power  
VDD = 2.6V, RL = 32, f = 1kHz  
VDD = 3.3V, RL = 8, f = 1kHz  
20075279  
20075280  
7
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Typical Performance Characteristics (Continued)  
THD+N vs Output Power  
THD+N vs Output Power  
VDD = 3.3V, RL = 16, f = 1kHz  
VDD = 3.3V, RL = 32, f = 1kHz  
20075281  
20075282  
THD+N vs Output Power  
THD+N vs Output Power  
VDD = 5V, RL = 8, f = 1kHz  
VDD = 5V, RL = 16, f = 1kHz  
20075283  
20075284  
THD+N vs Output Power  
VDD = 5V, RL = 32, f = 1kHz  
Output Power vs Load Resistance  
VDD = 2.6V, f = 1kHz  
20075286  
20075285  
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8
Typical Performance Characteristics (Continued)  
Output Power vs Load Resistance  
VDD = 3.3V, f = 1kHz  
Output Power vs Load Resistance  
VDD = 5V, f = 1kHz  
20075287  
20075288  
Output Power vs Supply Voltage  
Output Power vs Supply Voltage  
RL = 8, f = 1kHz  
RL = 16, f = 1kHz  
20075289  
20075290  
Output Power vs Supply Voltage  
Clipping Voltage vs  
Supply Voltage  
RL = 32, f = 1kHz  
20075292  
20075291  
9
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Typical Performance Characteristics (Continued)  
Power Dissipation vs  
Output Power  
Power Dissipation vs  
Output Power  
20075229  
20075230  
Power Dissipation vs  
Output Power  
Crosstalk vs Frequency  
VDD = 5V, RL = 8Ω  
20075231  
20075293  
Crosstalk vs Frequency  
Output Noise vs Frequency  
VDD = 5V, RL = 32Ω  
VDD = 5V, RL = 32Ω  
20075294  
20075295  
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10  
Typical Performance Characteristics (Continued)  
PSRR vs Frequency  
VDD = 5V, RL = 32, VRIPPLE = 100mVpp  
Pins 3 and 5 directly driven, Inputs Floating  
PSRR vs Frequency  
VDD = 5V, RL = 32, VRIPPLE = 100mVpp  
Inputs Terminated  
20075297  
20075296  
Open Loop Frequency Response  
Open Loop Frequency Response  
VDD = 5V, RL = 8Ω  
VDD = 5V, RL = 32Ω  
20075298  
20075299  
Open Loop Frequency Response  
Supply Current vs  
VDD = 5V, RL = 5kΩ  
Supply Voltage (no Load)  
200752A0  
200752A1  
11  
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Typical Performance Characteristics (Continued)  
Frequency Response vs  
Output Capacitor Size  
Frequency Response vs  
Output Capacitor Size  
20075245  
20075246  
Frequency Response vs  
Output Capacitor Size  
Typical Application  
Frequency Response  
20075247  
20075248  
Typical Application  
Frequency Response  
20075249  
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12  
POWER SUPPLY BYPASSING  
Application Information  
As with any power amplifier, proper supply bypassing is  
critical for low noise performance and high power supply  
rejection. Applications that employ a 5V regulator typically  
use a 10µF in parallel with a 0.1µF filter capacitors to stabi-  
lize the regulator’s output, reduce noise on the supply line,  
and improve the supply’s transient response. However, their  
presence does not eliminate the need for a local 0.1µF  
supply bypass capacitor, CS, connected between the  
LM4908’s supply pins and ground. Keep the length of leads  
and traces that connect capacitors between the LM4908’s  
power supply pin and ground as short as possible. Connect-  
ing a 1.0µF capacitor, CB, between the IN A(+) / IN B(+) node  
and ground improves the internal bias voltage’s stability and  
improves the amplifier’s PSRR. The PSRR improvements  
increase as the bypass pin capacitor value increases. Too  
large, however, increases the amplifier’s turn-on time. The  
selection of bypass capacitor values, especially CB, depends  
on desired PSRR requirements, click and pop performance  
(as explained in the section, Selecting Proper External  
Components), system cost, and size constraints.  
EXPOSED-DAP PACKAGE PCB MOUNTING  
CONSIDERATION  
The LM4908’s exposed-dap (die attach paddle) package  
(LQ) provides a low thermal resistance between the die and  
the PCB to which the part is mounted and soldered. This  
allows rapid heat transfer from the die to the surrounding  
PCB copper traces, ground plane, and surrounding air.  
The LQ package should have its DAP soldered to a copper  
pad on the PCB. The DAP’s PCB copper pad may be con-  
nected to a large plane of continuous unbroken copper. This  
plane forms a thermal mass, heat sink, and radiation area.  
However, since the LM4908 is designed for headphone ap-  
plications, connecting a copper plane to the DAP’s PCB  
copper pad is not required. The LM4908’s Power Dissipation  
vs Output Power Curve in the Typical Performance Char-  
acteristics shows that the maximum power dissipated is just  
45mW per amplifier with a 5V power supply and a 32load.  
Further detailed and specific information concerning PCB  
layout, fabrication, and mounting an LQ (LLP) package is  
available from National Semiconductor’s Package Engineer-  
ing Group under application note AN1187.  
SELECTING PROPER EXTERNAL COMPONENTS  
Optimizing the LM4908’s performance requires properly se-  
lecting external components. Though the LM4908 operates  
well when using external components with wide tolerances,  
best performance is achieved by optimizing component val-  
ues.  
POWER DISSIPATION  
Power dissipation is a major concern when using any power  
amplifier and must be thoroughly understood to ensure a  
successful design. Equation 1 states the maximum power  
dissipation point for a single-ended amplifier operating at a  
given supply voltage and driving a specified output load.  
The LM4908 is unity-gain stable, giving a designer maximum  
design flexibility. The gain should be set to no more than a  
given application requires. This allows the amplifier to  
achieve minimum THD+N and maximum signal-to-noise ra-  
tio. These parameters are compromised as the closed-loop  
gain increases. However, low gain demands input signals  
with greater voltage swings to achieve maximum output  
power. Fortunately, many signal sources such as audio  
CODECs have outputs of 1VRMS (2.83VP-P). Please refer to  
the Audio Power Amplifier Design section for more infor-  
mation on selecting the proper gain.  
2
PDMAX = (VDD  
)
/ (2π2RL)  
(1)  
Since the LM4908 has two operational amplifiers in one  
package, the maximum internal power dissipation point is  
twice that of the number which results from Equation 1. Even  
with the large internal power dissipation, the LM4908 does  
not require heat sinking over a large range of ambient tem-  
perature. From Equation 1, assuming a 5V power supply and  
a 32load, the maximum power dissipation point is 40mW  
per amplifier. Thus the maximum package dissipation point  
is 80mW. The maximum power dissipation point obtained  
must not be greater than the power dissipation that results  
from Equation 2:  
Input and Output Capacitor Value Selection  
Amplifying the lowest audio frequencies requires high value  
input and output coupling capacitors (CI and CO in Figure 1).  
A high value capacitor can be expensive and may compro-  
mise space efficiency in portable designs. In many cases,  
however, the speakers used in portable systems, whether  
internal or external, have little ability to reproduce signals  
below 150Hz. Applications using speakers with this limited  
frequency response reap little improvement by using high  
value input and output capacitors.  
PDMAX = (TJMAX − TA) / θJA  
(2)  
For package MUA08A, θJA = 210˚C/W. TJMAX = 150˚C for  
the LM4908. Depending on the ambient temperature, TA, of  
the system surroundings, Equation 2 can be used to find the  
maximum internal power dissipation supported by the IC  
packaging. If the result of Equation 1 is greater than that of  
Equation 2, then either the supply voltage must be de-  
creased, the load impedance increased or TA reduced. For  
the typical application of a 5V power supply, with a 32load,  
the maximum ambient temperature possible without violating  
the maximum junction temperature is approximately 133.2˚C  
provided that device operation is around the maximum  
power dissipation point. Power dissipation is a function of  
output power and thus, if typical operation is not around the  
maximum power dissipation point, the ambient temperature  
may be increased accordingly. Refer to the Typical Perfor-  
mance Characteristics curves for power dissipation infor-  
mation for lower output powers.  
Besides affecting system cost and size, Ci has an effect on  
the LM4908’s click and pop performance. The magnitude of  
the pop is directly proportional to the input capacitor’s size.  
Thus, pops can be minimized by selecting an input capacitor  
value that is no higher than necessary to meet the desired  
−3dB frequency.  
As shown in Figure 1, the input resistor, RI and the input  
capacitor, CI, produce a −3dB high pass filter cutoff fre-  
quency that is found using Equation (3). In addition, the  
output load RL, and the output capacitor CO, produce a -3db  
high pass filter cutoff frequency defined by Equation (4).  
fI-3db=1/2πRICI  
(3)  
fO-3db=1/2πRLCO  
(4)  
13  
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package. Once the power dissipation equations have been  
addressed, the required gain can be determined from Equa-  
tion (7).  
Application Information (Continued)  
Also, careful consideration must be taken in selecting a  
certain type of capacitor to be used in the system. Different  
types of capacitors (tantalum, electrolytic, ceramic) have  
unique performance characteristics and may affect overall  
system performance.  
(7)  
Thus, a minimum gain of 1.497 allows the LM4908 to reach  
full output swing and maintain low noise and THD+N perfro-  
mance. For this example, let AV = 1.5.  
Bypass Capacitor Value  
Besides minimizing the input capacitor size, careful consid-  
eration should be paid to the value of the bypass capacitor,  
CB. Since CB determines how fast the LM4908 settles to  
quiescent operation, its value is critical when minimizing  
turn-on pops. The slower the LM4908’s outputs ramp to their  
quiescent DC voltage (nominally 1/2 VDD), the smaller the  
turn-on pop. Choosing CB equal to 1.0µF or larger, will  
minimize turn-on pops. As discussed above, choosing Ci no  
larger than necessary for the desired bandwith helps mini-  
mize clicks and pops.  
The amplifiers overall gain is set using the input (Ri ) and  
feedback (Rf ) resistors. With the desired input impedance  
set at 20k, the feedback resistor is found using Equation  
(8).  
AV = Rf/Ri  
(8)  
The value of Rf is 30k.  
AUDIO POWER AMPLIFIER DESIGN  
The last step in this design is setting the amplifier’s −3db  
frequency bandwidth. To achieve the desired 0.25dB pass  
band magnitude variation limit, the low frequency response  
must extend to at lease one−fifth the lower bandwidth limit  
and the high frequency response must extend to at least five  
times the upper bandwidth limit. The gain variation for both  
response limits is 0.17dB, well within the 0.25dB desired  
limit. The results are an  
Design a Dual 70mW/32Audio Amplifier  
Given:  
Power Output  
Load Impedance  
Input Level  
70mW  
32Ω  
1Vrms (max)  
Input Impedance  
Bandwidth  
20kΩ  
100Hz–20kHz 0.50dB  
fL = 100Hz/5 = 20Hz  
(9)  
The design begins by specifying the minimum supply voltage  
necessary to obtain the specified output power. One way to  
find the minimum supply voltage is to use the Output Power  
vs Supply Voltage curve in the Typical Performance Char-  
acteristics section. Another way, using Equation (5), is to  
calculate the peak output voltage necessary to achieve the  
desired output power for a given load impedance. To ac-  
count for the amplifier’s dropout voltage, two additional volt-  
ages, based on the Dropout Voltage vs Supply Voltage in the  
Typical Performance Characteristics curves, must be  
added to the result obtained by Equation (5). For a single-  
ended application, the result is Equation (6).  
and a  
fH = 20kHz*5 = 100kHz  
(10)  
As stated in the External Components section, both Ri in  
conjunction with Ci, and Co with RL, create first order high-  
pass filters. Thus to obtain the desired low frequency re-  
sponse of 100Hz within 0.5dB, both poles must be taken  
into consideration. The combination of two single order filters  
at the same frequency forms a second order response. This  
results in a signal which is down 0.34dB at five times away  
from the single order filter −3dB point. Thus, a frequency of  
20Hz is used in the following equations to ensure that the  
response is better than 0.5dB down at 100Hz.  
(5)  
VDD (2VOPEAK + (VOD  
+ VODBOT))  
(6)  
TOP  
Ci 1 / (2π * 20 k* 20 Hz) = 0.397µF; use 0.39µF.  
Co 1 / (2π * 32* 20 Hz) = 249µF; use 330µF.  
The high frequency pole is determined by the product of the  
desired high frequency pole, fH, and the closed-loop gain,  
AV. With a closed-loop gain of 1.5 and fH = 100kHz, the  
resulting GBWP = 150kHz which is much smaller than the  
LM4908’s GBWP of 3MHz. This figure displays that if a  
designer has a need to design an amplifier with a higher  
gain, the LM4908 can still be used without running into  
bandwidth limitations.  
The Output Power vs Supply Voltage graph for a 32load  
indicates a minimum supply voltage of 4.8V. This is easily  
met by the commonly used 5V supply voltage. The additional  
voltage creates the benefit of headroom, allowing the  
LM4908 to produce peak output power in excess of 70mW  
without clipping or other audible distortion. The choice of  
supply voltage must also not create a situation that violates  
maximum power dissipation as explained above in the  
Power Dissipation section. Remember that the maximum  
power dissipation point from Equation (1) must be multiplied  
by two since there are two independent amplifiers inside the  
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14  
Demonstration Board Layout  
20075264  
Recommended MSOP Board Layout:  
Top Overlay  
20075265  
Recommended MSOP Board Layout:  
Top Layer  
20075266  
Recommended MSOP Board Layout:  
Bottom Layer  
15  
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Demonstration Board Layout (Continued)  
200752B1  
200752B0  
200752A9  
Recommended LQ Board Layout:  
Top Overlay  
Recommended LQ Board Layout:  
Top Layer  
Recommended LQ Board Layout:  
Bottom Layer  
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16  
Demonstration Board Layout (Continued)  
200752B4  
Recommended MA Board Layout:  
Top Overlay  
200752B3  
Recommended MA Board Layout:  
Top Layer  
200752B2  
Recommended MA Board Layout:  
Bottom Layer  
17  
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LM4908 MDC MWC  
Dual 120MW Headphone Amplifier  
20075263  
Die Layout (A - Step)  
DIE/WAFER CHARACTERISTICS  
Fabrication Attributes  
Physical Die Identification  
General Die Information  
Bond Pad Opening Size (min)  
Bond Pad Metalization  
LM4908A  
A
70µm x 70µm  
ALUMINUM  
NITRIDE  
Die Step  
Physical Attributes  
Passivation  
Wafer Diameter  
150mm  
Back Side Metal  
Back Side Connection  
BARE BACK  
Floating  
Dise Size (Drawn)  
889µm x 622µm  
35.0mils x 24.5mils  
216µm Nominal  
216µm Nominal  
Thickness  
Min Pitch  
Special Assembly Requirements:  
Note: Actual die size is rounded to the nearest micron.  
Die Bond Pad Coordinate Locations (A - Step)  
(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used  
X/Y COORDINATES  
PAD SIZE  
SIGNAL NAME PAD# NUMBER  
X
Y
X
70  
Y
INPUT B+  
INPUT B-  
OUTPUT B  
VDD  
1
2
3
4
5
6
7
8
-367  
-367  
-367  
35  
232  
15  
x
x
x
x
x
x
x
x
70  
70  
70  
70  
70  
70  
70  
70  
70  
-232  
-232  
-232  
15  
70  
155  
70  
OUTPUT A  
INPUT A-  
INPUT A+  
GND  
367  
367  
367  
68  
70  
232  
232  
70  
155  
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18  
LM4908 MDC MWC  
Dual 120MW Headphone Amplifier (Continued)  
IN U.S.A  
Tel #:  
Fax:  
1 877 Dial Die 1 877 342 5343  
1 207 541 6140  
IN EUROPE  
Tel:  
49 (0) 8141 351492 / 1495  
49 (0) 8141 351470  
Fax:  
IN ASIA PACIFIC  
Tel:  
(852) 27371701  
81 043 299 2308  
IN JAPAN  
Tel:  
19  
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Physical Dimensions inches (millimeters)  
unless otherwise noted  
Order Number LM4908LQ  
NS Package Number LQB08A  
Order Number LM4908MA  
NS Package Number M08A  
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20  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
Order Number LM4908MM  
NS Package Number MUA08A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL  
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and  
whose failure to perform when properly used in  
accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a  
significant injury to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform  
can be reasonably expected to cause the failure of  
the life support device or system, or to affect its  
safety or effectiveness.  
BANNED SUBSTANCE COMPLIANCE  
National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products  
Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification  
(CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2.  
National Semiconductor  
Americas Customer  
Support Center  
National Semiconductor  
Europe Customer Support Center  
Fax: +49 (0) 180-530 85 86  
National Semiconductor  
Asia Pacific Customer  
Support Center  
National Semiconductor  
Japan Customer Support Center  
Fax: 81-3-5639-7507  
Email: new.feedback@nsc.com  
Tel: 1-800-272-9959  
Email: europe.support@nsc.com  
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Email: ap.support@nsc.com  
Email: jpn.feedback@nsc.com  
Tel: 81-3-5639-7560  
www.national.com  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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