NTE2300 [NTE]
Silicon NPN Transistor High Voltage, Horizontal Output; 硅NPN晶体管高电压，输出水平
| 型号： | NTE2300 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Voltage, Horizontal Output |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Charactertistics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
= 800V, I = 0
Min
Typ Max Unit
Collector Cutoff Current
I
V
V
V
V
–
–
–
–
–
3
–
–
–
–
–
–
10
1
µA
CBO
CB
EB
CE
CE
E
Emitter Cutoff Current
I
= 5V, I = 0
mA
EBO
C
DC Current Gain
h
FE
= 5V, I = 1A
8
–
C
Current–Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Fall Time
f
T
= 10V, I = 1A
–
–
MHz
V
C
V
CE(sat)
V
BE(sat)
I = 4A, I = 0.8A
–
5.0
1.5
–
C
B
I = 4A, I = 0.8A
–
V
C
B
V
V
V
I = 5mA, I = 0
1500
800
7
V
(BR)CBO
(BR)CEO
(BR)EBO
C
E
I = 100mA, R = ∞
–
V
C
BE
I = 200mA, I = 0
–
V
E
C
t
f
I = 4A, I = 0.8A, I = –1.6A
–
0.4
µs
C
B1
B2
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
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