NTE2364 [NTE]
Silicon Complementary Transistors High Current General Purpose Amp/Switch; 硅互补晶体管高电流通用放大器/开关
| 型号： | NTE2364 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Current General Purpose Amp/Switch |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
D Low Saturation Voltage
D Large Current Capacity and Wide ASO
Applications:
D Power Supplies
D Relay Drivers
D Lamp Drivers
D Automotive Wiring
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1 For PNP device (NTE2364), voltage and current values are negative.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 50V, IE = 0
VEB = 4V, IC = 0
Min Typ Max Unit
–
–
–
–
0.1
0.1
400
–
µA
µA
IEBO
hFE (1) VCE = 2V, IC = 100mA
hFE (2) VCE = 2V, IC = 1.5A
200
40
–
–
–
Gain Bandwidth Product
fT
VCE = 10V, IC = 50mA
150
–
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2363
NTE2364
cob
VCB = 10V, f = 1MHz
–
–
12
22
–
–
pF
pF
Collector–Emitter Saturation Voltage
NTE2363
VCE(sat) IC = 1A, IB = 50mA
VBE(sat) IC = 1A, IB = 50mA
–
–
0.15 0.4
V
V
V
V
V
V
NTE2364
0.3
0.9
–
0.7
1.2
–
Base–Emitter Saturation Voltage
–
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0
60
50
6
–
–
–
–
.343
(8.73)
Max
.492
(12.5)
Min
.024 (0.62) Max
E C B
.102 (2.6) Max
.059 (1.5) Typ
.018 (0.48)
.118 (3.0) Max
.197 (5.0)
.102 (2.6) Max
.236 (6.0)Dia Max
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