NTE2539 [NTE]
Silicon NPN Transistor High Voltage, High Speed Switch; 硅NPN晶体管高电压，高速开关
| 型号： | NTE2539 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Voltage, High Speed Switch |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2539
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 400V, IE = 0
Min Typ Max Unit
–
–
–
–
–
–
–
–
–
10
10
50
–
µA
µA
IEBO
VEB = 5V, IC = 0
hFE
VCE = 5V, IC = 3.2A
VCE = 5V, IC = 16A
VCE = 5V, IC = 10mA
15
10
10
–
–
Collector–Emitter Saturation Voltage VCE(sat) IC = 16A, IB = 3.2A
Base–Emitter Saturation Voltage VBE(sat) IC = 16A, IB = 3.2A
0.8
1.5
V
V
–
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Gain–Bandwidth Product
Output Capacitance
Symbol
fT
Test Conditions
VCE = 10V, IC = 3.2A
VCB = 10V, f = 1MHz
Min Typ Max Unit
–
–
20
300
–
–
–
–
–
–
–
MHz
pF
V
Cob
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
500
400
7
–
V
–
V
Collector–Emitter Sustaining Voltage VCEX(sus) IC = 10A, IB1 = 1A, IB2 = –4A,
L = 200µH Clamped
400
–
V
Turn–On Time
Storage Time
Fall Time
ton
tstg
tf
–
–
–
–
–
–
0.5
2.5
0.3
µs
µs
µs
IC = 20A, IB1 = 4A, IB2 = –8A,
RL = 10Ω, VCC = 200V
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
相关型号：
NTE253MCP
TRANSISTOR | BJT | PAIR | DARLINGTON | COMPLEMENTARY | 80V V(BR)CEO | 4A I(C) | TO-126
ETC
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