NTE2653 [NTE]
Transistor,;
| 型号： | NTE2653 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2652 (PNP) & NTE2653 (NPN)
Silicon Complementary Transistors
High Current Driver
Features:
D Low Saturation Voltage
D Large Current Capacity and Wide ASO
Applications:
D Power Supplies
D Relay Drivers
D Lamp Drivers
D Electrical Equipment
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
Min Typ Max Unit
V
CBO
V
CB
V
EB
V
CE
V
CE
V
CE
V
CB
= 40V, I = 0
−
−
−
−
1.0
1.0
560
−
µA
µA
E
V
EBO
= 4V, I = 0
C
h
FE
= 2V, I = 100mA
140
−
−
C
= 2V, I = 3A
40
150
25
C
Gain−Bandwidth Product
f
T
= 10V, I = 50mA
−
−
MHz
pF
C
Output Capacitance
c
= 10V, f = 1MHz
−
−
ob
Collector to Emitter Saturation Voltage
NTE2652
V
V
I = 2A, I = 100mA
−
−
0.19 0.5
0.35 0.7
0.94 1.2
V
V
V
V
V
V
CE(sat)
C
B
NTE2653
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
I = 2A, I = 100mA
−
BE(sat)
C
B
V
V
V
I = 10µA, I = 0
60
50
6
−
−
−
−
−
−
(BR)CBO
(BR)CEO
(BR)EBO
C
E
I = 1mA, R = ∞
C
BE
I = 10µA, I = 0
E
C
.343
(8.73)
Max
.492
(12.5)
Min
.024 (0.62) Max
E C B
.102 (2.6) Max
.059 (1.5) Typ
.018 (0.48)
.197 (5.0)
.118 (3.0) Max
.236 (6.0)Dia Max
.102 (2.6) Max
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