NTE2667 [NTE]

Transistor,;
NTE2667
型号: NTE2667
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

Transistor,

文件: 总2页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NTE2666 (NPN) & NTE2667 (PNP)  
Silicon Complementary Transistors  
High Frequency Driver  
Features:  
D DC Current Gain Specified to 5 Amperes  
D Collector-Emitter Sustaining Voltage  
D High Current Gain - Bandwidth Product  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V  
Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V  
Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W  
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W/°C  
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W  
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .016W/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
OFF Characteristics  
Collector-Emitter Sustaining Voltage VCEO(  
IC = 10mA, IB = 0, Note 1  
VCB = 250V, IE = 0  
VEB = 5V, IC = 0  
250  
-
-
-
-
-
V
sus)  
Collector Cutoff Current  
Emitter Cutoff Current  
ON Characteristics (Note 1)  
DC Current Gain  
ICBO  
IEBO  
10  
10  
μA  
μA  
-
IC = 0.5A, VCE = 5V  
IC = 1A, VCE = 5V  
IC = 2A, VCE = 5V  
70  
50  
10  
-
-
-
-
-
-
-
-
-
-
-
V
V
hFE  
-
Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A  
Base-Emitter On Voltage VBE(on) IC = 1A, VCE = 5V  
0.5  
1.0  
-
Dynamic Characteristics: (fT = |hfe|S ftest  
)
Current Gain-Bandwidth Product  
fT  
IC = 500mA, VCE = 10V,  
ftest = 1MHz  
30  
-
-
MHz  
Note 1. Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%.  
.420 (10.67)  
Max  
.110 (2.79)  
Tab  
.147 (3.75)  
Dia Max  
.500  
(12.7)  
Max  
.250 (6.35)  
Max  
.500  
(12.7)  
Min  
.100 (2.54)  
Base  
Emitter  
Collector/Tab  
.070 (1.78) Max  

相关型号:

NTE2668

Silicon NPN Transistor High Current Switching
NTE

NTE267

Silicon NPN Transistor High Gain Darlington Power Amp, Switch
NTE

NTE2670

Transistor,
NTE

NTE2673

Transistor,
NTE

NTE2674

Transistor,
NTE

NTE2675

Transistor,
NTE

NTE2678

Transistor,
NTE

NTE2679

Transistor,
NTE

NTE268

Silicon Complementary Transistors Darlington Power Amplifier
NTE

NTE269

Silicon Complementary Transistors Darlington Power Amplifier
NTE

NTE27

Germanium PNP Transistor High Current, High Gain Amp
NTE

NTE270

Silicon Complementary Transistors Darlington Power Amp, Switch
NTE