NTE2661 [NTE]
Silicon NPN Transistor Horizontal Deflection Output for HDTV; 硅NPN晶体管水平偏转输出的HDTV
| 型号： | NTE2661 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Horizontal Deflection Output for HDTV |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2661
Silicon NPN Transistor
Horizontal Deflection Output for HDTV
Features:
D High Speed: tf = 0.15µs Typ
D High Breakdown Voltage: VCBO = 1700V
D Low Saturation Voltage: VCE(sat) = 3V Max
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Test Conditions
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
Min Typ Max Unit
ICBO
−
−
−
−
1.0
10
−
mA
µA
V
IEBO
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
600
10
4.5
−
−
DC Current Gain
hFE
VCE = 5V, IC = 2A
VCE = 5V, IC = 11A
−
30
8.5
3
−
−
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
VCE(sat) IC = 11A, IB = 2.75A
VBE(sat) IC = 11A, IB = 2.75A
−
V
V
−
1.0
1.7
290
2.5
1.3
−
fT
Cob
tstg
tf
VCE = 10V, IE = 0.1A
−
MHz
pF
µs
Collector Output capacitance
Storage Time
VCB = 10V, IE = 0, f = 1MHz
−
−
−
4.0
IC(peak) = 10A, IB1 = 1.8A,
fH = 64kHz
Fall Time
−
0.15 0.3
µs
.810 (20.57) Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
B
C
E
NOTE: Pin2 connected to heatsink
相关型号：
NTE2665
Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV
NTE
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