NTE2658 [NTE]
Transistor,;
| 型号： | NTE2658 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2657 (NPN) & NTE2658 (PNP)
Silicon Complementary Transistors
Medium Power
Features:
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Pulse Current, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/°C
Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +200°C
Thermal Resistance, Junction−to−Ambient, RthJA1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA2 . . . . . . . . . . . . . . . . . . . . . . . . . . 116°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Note 1. Device mounted on P.C.B. with copper equal to 1sq. Inch minimum
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
V
I = 100µA
120
100
5
−
−
−
−
−
−
−
−
V
V
V
(BR)CBO
C
V
I = 10mA, Note 2
C
(BR)CEO
V
I = 100µA
E
(BR)EBO
I
V
CB
V
CB
= 100V
−
0.1 µA
CBO
−
10
= 100V, T = +100°C
A
Emitter Cut−Off Current
I
I = 100µA
−
−
−
−
−
−
0.1 µA
EBO
E
Collector−Emitter Saturation Voltage
V
I = 1A, I = 100mA, Note 2
0.13 0.3
0.23 0.5
0.9 1.25
V
CE(sat)
C
B
I = 2A, I = 200mA, Note 2
C
B
Base−Emitter Saturation Voltage
Base−Emitter Turn−On Voltage
V
I = 1A, I = 100mA, Note 2
V
V
BE(sat)
C
B
V
BE(on)
I = 1A, V = 2V, Note 2
0.8
1
C
CE
Transition Frequency
NTE2657
f
T
I = 100mA, V = 5V, f = 100MHz
140 175
100 140
−
−
MHz
C
CE
NTE2658
Electrical Characteristics (Cont’d) : (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Times
NTE2657
NTE2658
t
t
t
t
I = 500mA, V = 10V, I =I = 50mA
−
80
1200
40
−
ns
on
off
on
off
C
CC
B1 B2
600
−
Output Capacitance
c
V
CB
= 10V, f = 1MHz
−
30
pF
ob
Static Forward Current Transfer Ratio
h
FE
I = 50mA, V = 2V, Note 2
70
200
−
C
CE
I = 500mA, V = 2V, Note 2
100 200 300
C
CE
I = 1A, V = 2V, Note 2
55
25
110
55
−
−
C
CE
I = 2A, V = 2V, Note 2
C
CE
Note 2. Measured under pulsed conditions: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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