NTE2936 [NTE]
MOSFET N-Channel, Enhancement Mode High Speed Switch; MOSFET N沟道增强模式的高速开关
| 型号： | NTE2936 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET N-Channel, Enhancement Mode High Speed Switch |
| 文件： | 总3页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2936
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.308Ω Typ
D Lower Leakage Current: 10µA (Max) @ VDS = 500V
Absolute Maximum Ratings:
Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.1A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.77W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1024mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.6mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 20mH, IAS = 9.6A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 14A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
BV
V
= 0V, I = 250µA
500
–
–
–
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
∆V
/ I = 250µA
–
0.68
V/°C
(BR)DSS
∆T
D
J
Gate Threshold Voltage
V
V
V
V
V
= 5V, I = 250µA
2.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.0
V
GS(th)
DS
GS
GS
DS
D
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Drain–to–Source Leakage Current
I
= 30V
100
nA
GSS
I
= –30V
= 500V
–
–100 nA
GSS
I
–
10
100
0.4
–
µA
µA
DSS
V
DS
= 400V, T = +125°C
–
C
Static Drain–Source ON Resistance
Forward Transconductance
Input Capacitance
R
DS(on)
V
= 10V, I = 4.8A, Note 4
–
Ω
GS
DS
GS
D
g
fs
V
V
= 50V, I = 4.8A, Note 4
8.96
mhos
D
C
= 0V, V = 25V, f = 1MHz
2500 3250 pF
iss
DS
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
C
295
130
23
340
150
55
pF
pF
ns
oss
C
rss
t
V
DD
= 250V I = 14A, R = 6.2Ω,
d(on)
, D
G
Note 4, Note 5
t
r
26
60
ns
Turn–Off Delay Time
Fall Time
t
125
37
260
85
ns
d(off)
t
f
ns
Total Gate Charge
Q
121 157
nC
nC
nC
V
GS
= 10V, I = 14A, V = 400V,
D DS
g
Note 4, Note 5
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Q
Q
16.2
61
–
–
gs
gd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
I
(Body Diode)
–
–
–
–
–
–
–
9.6
56
1.4
–
A
A
S
I
(Body Diode) Note 1
SM
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
T = +25°C, I = 9.6A, V = 0V, Note 4
–
V
J
S
GS
t
rr
437
5.5
ns
µC
T = +25°C, I = 14A, di /dt = 100A/µs,
J
F
F
Note 4
Q
–
rr
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.123 (3.1)
.315
(8.0)
.866
(22.0)
G
D
S
.158 (4.0)
.804
(20.4)
.040 (1.0)
.215 (5.45)
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