NTE2945 [NTE]
MOSFET N-Channel, Enhancement Mode High Speed Switch; MOSFET N沟道增强模式的高速开关
| 型号： | NTE2945 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET N-Channel, Enhancement Mode High Speed Switch |
| 文件： | 总3页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2945
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. TJ = +25° to +150°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 9.1mH, VDD = 50V, RG = 25Ω, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
Gate Threshold Voltage
BV
V
V
V
V
V
V
V
V
V
= 0v, I = 250µA
450
2.0
–
–
–
–
V
V
DSS
GS
DS
GS
GS
DS
DS
GS
DS
GS
D
V
GS(th)
= V , I = 250µA
4.0
100
GS
D
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Zero Gate Voltage Drain Current
I
= 20V
–
nA
GSS
I
= –20V
–
–
–100 nA
250 µA
1000 µA
GSS
I
= Max. Rating, V = 0
–
–
DSS
GS
= 0.8 Max. Rating, T = +125°C
–
–
C
Static Drain–Source ON Resistance
Forward Transconductance
Input Capacitance
R
DS(on)
= 10V, I = 5A, Note 4
–
–
0.55
–
Ω
mhos
pF
D
g
≥ 50V, I = 5A, Note 4
5.8
–
8.7
1500
170
75
14
27
50
24
fs
D
C
= 0V, V = 25V, f = 1MHz
–
iss
oss
DS
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
C
–
–
pF
C
rss
–
–
pF
t
–
21
41
75
36
ns
V
= 0.5 BV I = 10A, Z = 9.1Ω,
DSS, D O
d(on)
DD
(MOSFET switching times are essentially
independent of operating temperature)
t
–
ns
r
Turn–Off Delay Time
Fall Time
t
–
ns
d(off)
t
–
ns
f
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Q
–
–
–
–
79
–
nC
nC
nC
V
= 10V, I = 10A, V = 0.8 Max.
D DS
g
GS
Rating, (Gate charge is essentially
Gate–Source Charge
Q
gs
gd
1013
32.3
independent of operating temperature)
Gate–Drain (“Miller”) Charge
Q
–
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
I
(Body Diode)
–
–
–
–
–
–
10
40
2
A
A
S
I
(Body Diode) Note 2
SM
Diode Forward Voltage
Reverse Recovery Time
V
SD
T = +25°C, I = 10A, V = 0V, Note 4
–
V
J
S
GS
t
rr
T = +25°C, I = 10A, dI /dt = 100A/µs
370
–
ns
J
F
F
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.402 (10.2) Max
.224 (5.7) Max
.173 (4.4)
Max
.114 (2.9)
Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
G
D
S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
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