NTE294 [NTE]
Silicon Complementary Transistors Audio Amplifier and Driver; 硅互补晶体管音频放大器和驱动程序
| 型号： | NTE294 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Audio Amplifier and Driver |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Audio Amplifier and Driver
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
60
50
5
Typ Max Unit
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 10µA, I = 0
–
–
–
–
V
V
(BR)CBO
(BR)CEO
C
E
V
I = 2mA, I = 0
C B
V
I = 10µA, I = 0
–
–
V
(BR)EBO
E
C
I
V
= 20V, I = 0
–
–
0.1
240
–
µA
CBO
CB
CE
CE
E
DC Current Gain
h
FE
V
V
= 10V, I = 500mA, Note 2
120
50
–
–
C
= 5V, I = 1A, Note 2
100
0.2
0.85
200
11
B
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current–Gain Bandwidth Product
Collector Output Capacitance
V
CE(sat)
I = 500mA, I = 50mA, Note 2
0.4
1.2
–
V
V
C
B
V
BE(sat)
I = 500mA, I = 50mA, Note 2
–
C
B
f
T
V
= 10V, I = 50mA, f = 200MHz
–
MHz
pF
CB
CB
E
C
ob
V
= 10V, I = 0, f = 1MHz
–
20
e
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Pulse measurement.
.339
(8.62)
Max
Seating Plane
.026 (.66)
Dia Max
.512
(13.0)
Min
E C B
.100 (2.54)
.200
(5.08)
Max
.240 (6.09) Max
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