NTE361 [NTE]
Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz; 硅NPN晶体管射频输出功率PO = 2W @ 512MHz
| 型号： | NTE361 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE361
Silicon NPN Transistor
RF Power Output
PO = 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D Replaces Medium–Power Stud Mounted Devices
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation @ TC = 25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
V
I = 50mA, I = 0
16
36
4
–
–
–
–
–
–
–
V
V
V
(BR)CEO
C
B
V
I = 50mA, V = 0
C BE
(BR)CES
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 1mA, I = 0
E C
(BR)EBO
I
V
CB
= 15V, I = 0
–
1.0 mA
CBO
E
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
ON Characteristics
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
h
V
V
P
= 5V, I = 100mA
20
–
–
200
15
FE
CE
C
Dynamic Characteristics
Output Capacitance
C
= 12.5V, I = 0, f = 1MHz
–
pF
ob
CB
E
Functional Test
Common–Emitter Amplifier Power Gain
Collector Efficiency
G
= 2W, V = 12.5V, f = 470MHz 8.0
–
–
–
–
dB
%
PE
OUT
CC
η
P
OUT
= 2W, V = 12.5V, f = 470MHz
50
CC
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.018 (0.45) Dia
Base
Collector
Emitter/Case
45°
.031 (.793)
相关型号：
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NTE
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