NTE37 [NTE]
Silicon Complementary Transistors AF Power Amplifier, High Current Switch; 硅互补晶体管AF功率放大器，高电流开关
| 型号： | NTE37 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors AF Power Amplifier, High Current Switch |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE36 (NPN) & NTE37 (PNP)
Silicon Complementary Transistors
AF Power Amplifier, High Current Switch
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
= 80V, I = 0
Min
–
Typ Max
Unit
mA
mA
I
V
CB
V
BE
V
CE
V
CE
V
CE
V
CB
–
–
0.1
0.1
200
–
CEO
E
I
= 4V, I = 0
–
EBO
C
h
h
= 5V, I = 1A
60
20
–
–
FE1
C
= 5V, I = 6A
–
FE2
C
Gain Bandwidth Product
f
T
= 5V, I = 1A
15
–
MHz
pF
C
Output Capacitance
NTE36
C
ob
= 10V, f = 1MHz
–
–
210
300
–
–
NTE37
Base–Emitter Voltage
V
V
= 5V, I = 1A
–
–
1.5
V
V
BE
CE
C
Collector–Emitter Saturation Voltage
V
I = 5A, I = 500mA
C B
CE(sat)
NTE36
NTE37
–
–
0.6
1.1
2.5
–
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
I = 5mA, I = 0
Min
160
140
140
6
Typ Max
Unit
V
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V
–
–
–
–
–
–
–
–
(BR)CBO
(BR)CEO
C
E
V
I = 5mA, R = ∞
V
C
BE
I = 50mA, R = ∞
V
C
BE
Emitter–Base Breakdown Voltage
V
I = 5mA, I = 0
V
(BR)EBO
E
C
10I = –10I = I = 1A,
PW = 20µs
Turn–On Time
NTE36
t
on
µs
B1
B2
C
–
–
0.26
0.25
–
–
NTE37
Fall Time
NTE36
t
µs
µs
f
–
–
0.68
0.53
–
–
NTE37
Storage Time
NTE36
t
on
–
–
6.88
1.61
–
–
NTE37
Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
.190 (4.82)
.615 (15.62)
.670 (17.0)
Max
.197 (5.0)
.866
(22.0)
.217
(5.5)
OR
.787
(20.0)
(Note)
.591
(15.02)
.590
(15.0)
.130 (3.3)
Dia
.126
(3.22)
Dia
B
C
E
.177 (4.5)
.747
(19.0)
Min
.787
(20.0)
B
C
E
.215 (5.47) .025 (0.65)
.215 (5.47)
NOTE: Either case style may be shipped depending on stock.
相关型号：
NTE37MCP
Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
NTE
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