NTE366 [NTE]
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz; 硅NPN晶体管射频输出功率PO = 25W @ 512MHz
| 型号： | NTE366 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE366
Silicon NPN Transistor
RF Power Output
PO = 25W @ 512MHz
Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line
and Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
V
I = 20mA, I = 0
16
36
4
–
–
–
–
–
–
V
V
(BR)CEO
C
B
V
I = 20mA, V = 0
C BE
(BR)CES
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 5mA, I = 0
–
V
(BR)EBO
E
C
I
V
CE
= 15V, V = 0, T = +25°C
–
10
mA
CES
BE
C
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
h
V
V
= 5V, I = 4A
40
70 100
FE
CE
C
Dynamic Characteristics
Output Capacitance
C
= 12.5V, I = 0, f = 1MHz
–
90 125 pF
ob
CB
E
Functional Test
Common–Emitter Amplifier Power Gain
G
PE
P
C
= 25W, V = 12.5V,
6.2 7.0
–
dB
OUT
CC
I max = 3.6A, f = 470MHz
Input Power
P
–
5
6
W
%
P
= 25W, V = 12.5V, f = 470MHz
CC
in
OUT
Collector Efficiency
Output Mismatch Stress
η
55
60
–
ψ
V
= 16V, P = Note 1, f = 470MHz,
No Degradation in
Output Power
CC
in
VSWR = 20:1, All Phase Angles
Series Equivalent Input Impedance
Series Equivalent Output Impedance
Z
–1.2 + j3.3 –
–1.9 + j2.1 –
Ω
P
OUT
= 25W, V = 12.5V, f = 470MHz
in
CC
Z
OL
Ω
Note 1. Pin = 150% of Drive Requirement for 25W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.215 (5.48)
.205 (5.18)
.122 (3.1) Dia
E
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)
相关型号：
NTE36MP
Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
NTE
©2020 ICPDF网 联系我们和版权申明