NTE374 [NTE]
Silicon Complementary Transistors Audio Amplifier, Driver; 硅互补晶体管音频放大器,驱动器型号: | NTE374 |
厂家: | NTE ELECTRONICS |
描述: | Silicon Complementary Transistors Audio Amplifier, Driver |
文件: | 总2页 (文件大小:21K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTE373 (NPN) & NTE374 (PNP)
Silicon Complementary Transistors
Audio Amplifier, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
180
160
5
–
–
–
–
V
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V(BR)EBO IE = 1mA, IC = 0
–
–
V
ICBO
hFE1
hFE2
VCB = 160V, IE = 0
–
–
10
200
–
µA
VCE = 5V, IC = 150mA
VCE = 5V, IC = 500mA
60
30
–
–
–
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
VCE(sat) IC = 500mA, IB = 50mA
–
1
V
V
VBE
fT
VCE = 5V, IC = 150mA
VCE = 5V, IC = 500mA
VCB = 10V, IE = 0, f = 1MHz
–
–
1.5
–
Transistion Frequency
–
140
14
MHz
pF
Collector Output Capacitance
Cob
–
–
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max
相关型号:
NTE37MCP
Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
NTE
©2020 ICPDF网 联系我们和版权申明