NTE374 [NTE]

Silicon Complementary Transistors Audio Amplifier, Driver; 硅互补晶体管音频放大器,驱动器
NTE374
型号: NTE374
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

Silicon Complementary Transistors Audio Amplifier, Driver
硅互补晶体管音频放大器,驱动器

晶体 驱动器 音频放大器 小信号双极晶体管 局域网
文件: 总2页 (文件大小:21K)
中文:  中文翻译
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NTE373 (NPN) & NTE374 (PNP)  
Silicon Complementary Transistors  
Audio Amplifier, Driver  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A  
Collector Power Dissipation, PD  
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Collector–Base Breakdown Voltage  
V(BR)CBO IC = 1mA, IE = 0  
180  
160  
5
V
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE =  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
DC Current Gain  
V(BR)EBO IE = 1mA, IC = 0  
V
ICBO  
hFE1  
hFE2  
VCB = 160V, IE = 0  
10  
200  
µA  
VCE = 5V, IC = 150mA  
VCE = 5V, IC = 500mA  
60  
30  
Collector–Emitter Saturation Voltage  
Base–Emitter Voltage  
VCE(sat) IC = 500mA, IB = 50mA  
1
V
V
VBE  
fT  
VCE = 5V, IC = 150mA  
VCE = 5V, IC = 500mA  
VCB = 10V, IE = 0, f = 1MHz  
1.5  
Transistion Frequency  
140  
14  
MHz  
pF  
Collector Output Capacitance  
Cob  
.330 (8.38) Max  
.175  
(4.45)  
Max  
.450  
(11.4)  
Max  
.118  
(3.0)  
Dia  
.655  
(16.6)  
Max  
.030 (.762) Dia  
E
C
B
.090 (2.28)  
.130 (3.3)  
Max  

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