NTE375 [NTE]
Silicon NPN Transistor TV Vertical Output (Compl to NTE398); 硅NPN晶体管电视机垂直输出（中文全集，以NTE398 ）
| 型号： | NTE375 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor TV Vertical Output (Compl to NTE398) |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE375
Silicon NPN Transistor
TV Vertical Output
(Compl to NTE398)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Test Conditions
VCB = 180V, IE = 0
Min Typ Max Unit
–
–
–
–
–
8
–
–
1.0
5.0
200
–
mA
mA
VEB = 5V, IC = 0
VCE = 2V, IC = 500mA
VCE = 5V, IC = 500mA
100
–
Gain Bandwidth Product
fT
MHz
V
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA
Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA
–
1.5
1.8
–
V
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
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