NTE5655 [NTE]
TRIAC - 800mA Sensitive Gate; TRIAC - 800毫安敏感门
| 型号： | NTE5655 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | TRIAC - 800mA Sensitive Gate |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5655 thru NTE5657
TRIAC – 800mA
Sensitive Gate
Description:
The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed
to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated
chips.
These NTE devices are bi–directional triode thyristors and may be switched from off–state to conduc-
tion for either polarity of applied voltage with positive or negative gate trigger current. They are de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM
NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 360°C), ITRMS . . . . . . . . . . . . . . . 800mA
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . . 8A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
I
V
J
= Max Rating, Gate Open,
–
0.75
–
mA
DRM
DRM
T = +100°C
Max. On–State Voltage
V
i = 800mA (Peak)
–
–
–
–
–
1.9
15
–
V
TM
T
DC Holding Current
I
Gate Open
mA
V/µs
H
Critical Rate–of–Rise of Off–State Voltage
Critical V = V
dv/dt
, Gate Open, T = +100°C
DRM
10
D
C
Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
V = 6V, R = 100Ω
Min Typ Max Unit
DC Gate Trigger Current
I
–
–
5
mA
GT
D
L
T (+) Gate (+), T (–) Gate (–)
2
2
2
T (+) Gate (–), T (–) Gate (+)
2
DC Gate Trigger Voltage
V
V = 6V, R = 100Ω
–
–
–
2.2
V
GT
D
L
Gate–Controlled Turn–On Time
t
V = V
, I = 80mA, t = 0.1µs,
2.2
–
µs
gt
D
DRM GT
r
i = 10A (Peak)
T
.135 (3.45) Min
.210
(5.33)
Max
Seating
Plane
.500
(12.7)
Min
.021 (.445) Dia Max
MT1
MT2
Gate
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max
相关型号：
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