600F1R2BT250XT [NXP]
RF Power GaN Transistor;
| 型号： | 600F1R2BT250XT |
| 厂家： | 
NXP |
| 描述： | RF Power GaN Transistor |
| 文件： | 总15页 (文件大小：628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3I25X050N
Rev. 0, 12/2019
NXP Semiconductors
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
A3I25X050N
A3I25X050GN
The A3I25X050N integrated Doherty circuit is designed with on--chip
matching that makes it usable from 2300 to 2700 MHz. This multi--stage
structure is rated for 20 to 32 V operation and covers all typical cellular base
station modulation formats.
2300–2700 MHz, 5.6 W AVG., 28 V
AIRFAST RF LDMOS
INTEGRATED POWER AMPLIFIERS
2600 MHz
5.6 W Avg. — Typical Doherty Single--Carrier W--CDMA Characterization
Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.75 Vdc,
Pout = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
28.5
28.8
28.5
O M -- 4 0 0 -- 8
PLASTIC
A3I25X050N
38.2
39.0
37.0
–35.3
–35.5
–35.9
8.7 W Avg. — Typical Doherty Single--Carrier W--CDMA Characterization
Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.0 Vdc,
Pout = 8.7 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
OM--400G--8
PLASTIC
A3I25X050GN
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
27.8
28.0
28.0
44.4
44.8
43.7
–32.1
–31.9
–30.8
2300 MHz
8.9 W Avg. — Typical Doherty Single--Carrier W--CDMA Performance:
DD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.5 Vdc, Pout = 8.9 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
V
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
29.2
28.6
28.3
44.5
45.0
44.7
–30.6
–31.5
–33.0
Features
Integrated Doherty splitter and combiner
On--chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with
enable/disable function (1)
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2019 NXP B.V.
Quiescent Current
Temperature Compensation
V
GS(C)
V
1
2
3
4
5
6
7
DS1
V
GS(P)
GS(C)
V
V
GS2(C)
GS1(C)
V
V
DS1
RF /V
out DS2
RF
in
8
RF
V
in
GS(C)
V
GS(P)
RF /V
out DS2
V
DS1
(Top View)
V
V
GS2(P)
GS1(P)
aaa--033620
Note: Exposed backside of the package is
the source terminal for the transistor.
Quiescent Current
Temperature Compensation
V
GS(P)
aaa-- 033619
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Note: V
must be decoupled on the same pin as it is supplied. Do not supply voltage on Pin 1 and decouple on Pin 7 or supply voltage on
DS1
Pin 7 and decouple on Pin 1. Maximum current allowed between Pin 1 and Pin 7 inside the device is 1.8 A.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +65
–0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
20
T
C
C
(1,2)
Operating Junction Temperature Range
Input Power
T
J
C
P
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 77C, 8.9 W Avg., W--CDMA, 28.5 Vdc, I
= 30 mA,
DQ1(Carrier)
I
= 100 mA, V
= 3.75 Vdc, 2593 MHz
DQ2(Carrier)
GS(Peaking)
Stage 1
Stage 2
8.3
2.0
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Carrier Stage 1 and Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = V = 65 Vdc, V = 0 Vdc)
I
—
—
—
—
10
1
Adc
DSS(1+2)
DS1
DS2
GS
Zero Gate Voltage Drain Leakage Current
(V = V = 32 Vdc, V = 0 Vdc)
I
nAdc
DSS(1+2)
DS1
DS2
GS
Carrier Stage 1 and Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
0.7
—
1.7
2.0
7.3
2.4
—
Vdc
Vdc
Vdc
GSC(th)
GSC(Q)
GGC(Q)
(V = 10 Vdc, I = 16 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 130 mAdc)
DQ(Carrier)
DS
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 130 mAdc, Measured in Functional Test)
V
6.6
8.1
DD
DQ(Carrier)
Peaking Stage 1 and Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
10
1
Adc
DSS(1+2)
DSS(1+2)
(V
= V
= 65 Vdc, V = 0 Vdc)
DS2 GS
DS1
Zero Gate Voltage Drain Leakage Current
(V = V = 32 Vdc, V = 0 Vdc)
nAdc
DS1
DS2
GS
Peaking Stage 1 and Stage 2 — On Characteristics
Gate Threshold Voltage
V
0.7
1.7
2.4
0.5
Vdc
GSP(th)
(V
= V
= 10 Vdc, I = 32 Adc)
DS2 D
DS1
Drain--Source On--Voltage
(V = 10 Vdc, I = 320 mAdc)
V
0.05
0.25
Vdc
DS(on)
Stage 2
GS2(Peaking)
D
(continued)
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
= 130 mA, V = 3.55 Vdc,
GS(Peaking)
Unit
(1,2)
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ(Carrier)
P
= 5.6 W Avg., f = 2590 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
out
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
28.0
38.0
28.8
39.5
–35.6
48.6
33.0
—
dB
%
ps
Power Added Efficiency
PAE
ACPR
P3dB
Adjacent Channel Power Ratio
—
–32.5
—
dBc
W
P
@ 3 dB Compression Point, CW
42.7
out
Wideband Ruggedness (In NXP Characterization Test Fixture, 50 ohm system) I
= 130 mA, V
= 3.75 Vdc, f = 2600 MHz,
GS(Peaking)
DQ(Carrier)
Additive White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 32 Vdc, 17.4 W Avg. Modulated Output Power
(3 dB Input Overdrive from 9 W Avg. Modulated Output Power)
No Device Degradation
Typical Performance (In NXP Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 130 mA, V
= 3.75 Vdc,
DD
DQ(Carrier)
GS(Peaking)
2496–2690 MHz Bandwidth
(3)
P
@ 3 dB Compression Point
P3dB
—
—
55.0
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–12.5
the 2496–2690 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
180
—
MHz
%
res
(4)
Quiescent Current Accuracy over Temperature
I
QT
with 3.6 k Gate Feed Resistors (–30 to 85C) Stage 1+2 (Carrier)
—
—
—
6.5
0.3
—
—
—
Gain Flatness in 194 MHz Bandwidth @ P = 5.6 W Avg.
G
dB
out
F
Gain Variation over Temperature
G
0.031
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P3dB
—
0.018
—
dB/C
(–40C to +85C)
Table 6. Ordering Information
Device
A3I25X050NR1
A3I25X050GNR1
Tape and Reel Information
Package
OM--400--8
R1 Suffix = 500 Units, 32 mm Tape Width, 13--inch Reel
OM--400G--8
1. Part internally input and output matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
3. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal
avg
avg
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
4
V
DS2
A3I25X050N
V
DS1
C24
C25
R1
R2
V
V
GSP
C18
C12
Rev. 2
GSC
C14
C8
C1
C15
C3
C9
C2
C5
C20
R3
C16
C10
R4
C22
C27
C7
C23
cut out
area
C21
C6
C4
C11
C17
C13
C19
C26
V
DS2
aaa-035813
Figure 3. A3I25X050N Production Test Circuit Component Layout
Table 7. A3I25X050N Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
ATC
C1, C2, C3, C4, C5, C6, C7
10 pF Chip Capacitor
600F100JT250XT
C8, C9, C10, C11, C12, C13
1 F Chip Capacitor
GRM31CR72A105KA01L
GRM32EC72A106KE05L
600F1R5BT250XT
600F1R6BT250XT
600F0R5BT250XT
600F0R7BT250XT
MCRH63V337M13X21RH
600F0R6BT250XT
CRCW08050000Z0EA
RG1608P-3571-B-T5
D122762
Murata
Murata
ATC
C14, C15, C16, C17, C18, C19
10 F Chip Capacitor
C20
1.5 pF Chip Capacitor
1.6 pF Chip Capacitor
0.5 pF Chip Capacitor
0.7 pF Chip Capacitor
330 F, 63 V Electrolytic Capacitor
0.6 pF Chip Capacitor
0 , 1/8 W Chip Resistor
3.57 k, 1/10 W Chip Resistor
C21
ATC
C22
ATC
C23
ATC
C24, C25, C26
C27
Multicomp
ATC
R1, R2
R3, R4
PCB
Vishay
Susumu
MTL
Rogers RO4350B, 0.020, = 3.66
r
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
5
D116211
V
DS1
V
DS2
V
GSP
A3I25X050N
R1
V
GSC
C23
C24
R2
C17
C12
Rev. 0
C14
C8
C1
C15
C3
C9
C2
C5
C19
R3
C16
C10
R4
C21
C26
C7
C22
cut out
area
C20
C6
C4
C11
C13
C18
C25
V
GSC
V
GSP
V
DS2
V
DS1
aaa-035814
Figure 4. A3I25X050N Characterization Test Circuit Component Layout — 2496–2690 MHz
Table 8. A3I25X050N Characterization Test Circuit Component Designations and Values — 2496–2690 MHz
Part
C1, C2, C3, C4, C5, C6, C7
C8, C9, C10, C11, C12, C13
C14, C15, C16, C17, C18
C19
Description
Part Number
Manufacturer
10 pF Chip Capacitor
600F100JT250XT
ATC
1 F Chip Capacitor
GRM31CR72A105KA01L
GRM32EC72A106KE05L
600F1R5BT250XT
600F1R6BT250XT
600F0R5BT250XT
600F0R3BT250XT
600F0R7BT250XT
MCRH63V337M13X21RH
600F0R6BT250XT
CRCW08050000Z0EA
RG1608P-3571-B-T5
D116211
Murata
Murata
ATC
10 F Chip Capacitor
1.5 pF Chip Capacitor
1.6 pF Chip Capacitor
0.5 pF Chip Capacitor
0.3 pF Chip Capacitor
0.7 pF Chip Capacitor
330 F, 63 V Electrolytic Capacitor
0.6 pF Chip Capacitor
0 , 1/8 W Chip Resistor
3.57 k, 1/10 W Chip Resistor
C20
ATC
C21 (P = 5.6 W Avg.)
ATC
out
C21 (P = 8.7 W Avg.)
ATC
out
C22
ATC
C23, C24, C25
C26
Multicomp
ATC
R1, R2
R3, R4
PCB
Vishay
Susumu
MTL
Rogers RO4350B, 0.020, = 3.66
r
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
6
D116211
V
DS1
V
DS2
V
GSP
A3I25X050N
R1
C23
V
GSC
C24
R2
C17
C12
Rev. 0
C14
C8
C1
C15
C3
C9
C2
C5
C19
C21
R3
C16
C10
R4
C26
C7
C22
cut out
area
C20
C6
C4
C11
C13
C18
C25
V
GSC
V
GSP
V
DS2
V
DS1
aaa-035816
Figure 5. A3I25X050N Test Circuit Component Layout — 2300–2400 MHz
Table 9. A3I25X050N Test Circuit Component Designations and Values — 2300–2400 MHz
Part
Description
Part Number
Manufacturer
ATC
C1, C2, C3, C4, C5, C6, C7
10 pF Chip Capacitor
600F100JT250XT
C8, C9, C10, C11, C12, C13
1 F Chip Capacitor
GRM31CR72A105KA01L
GRM32EC72A106KE05L
600F1R5BT250XT
600F1R8BT250XT
600F1R0BT250XT
600F0R9BT250XT
MCRH63V337M13X21RH
600F0R6BT250XT
CRCW08050000Z0EA
RG1608P-3571-B-T5
D116211
Murata
Murata
ATC
C14, C15, C16, C17, C18
10 F Chip Capacitor
C19
1.5 pF Chip Capacitor
1.8 pF Chip Capacitor
1 pF Chip Capacitor
C20
ATC
C21
ATC
C22
0.9 pF Chip Capacitor
330 F, 63 V Electrolytic Capacitor
0.6 pF Chip Capacitor
0 , 1/8 W Chip Resistor
3.57 k, 1/10 W Chip Resistor
ATC
C23, C24, C25
C26
Multicomp
ATC
R1, R2
R3, R4
PCB
Vishay
Susumu
MTL
Rogers RO4350B, 0.020, = 3.66
r
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
7
PACKAGE INFORMATION
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
8
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
9
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
10
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
11
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
12
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2019
Initial release of data sheet
A3I25X050N A3I25X050GN
RF Device Data
NXP Semiconductors
14
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
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products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
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NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E 2019 NXP B.V.
Document Number: A3I25X050N
Rev. 0, 12/2019
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