933919910115 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal;
| 型号： | 933919910115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification
1999 Aug 24
Supersedes data of 1995 Sep 12
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DESCRIPTION
PINNING
PIN
page
4
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
DESCRIPTION
emitter
base
1
2
3
4
emitter
collector
1
2
3
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCEO
IC
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open base
−
−
18
V
−
−
−
150
1
mA
W
Ptot
hFE
fT
up to Ts = 135 °C (note 1)
−
IC = 100 mA; VCE = 10 V; Tj = 25 °C 25
70
4
−
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
−
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
15
−
−
−
f = 500 MHz; Tamb = 25 °C
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
11
dB
Vo
output voltage
IC = 100 mA; VCE = 10 V;
750
mV
dim = −60 dB; RL = 75 Ω;
f(p+q−r) = 793.25 MHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
MAX.
25
UNIT
V
open emitter
open base
−
−
18
V
open collector
−
2
V
−
150
1
mA
W
Ptot
up to Ts = 135 °C (note 1)
−
Tstg
−65
−
+150
175
°C
°C
Tj
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 24
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point up to Ts = 135 °C (note 1)
40
K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP.
MAX. UNIT
ICBO
hFE
Cc
collector cut-off current
DC current gain
−
−
1
µA
IC = 100 mA; VCE = 10 V
25
−
70
2
−
−
−
−
−
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
pF
Ce
−
10
1.2
4
pF
Cre
fT
−
pF
IC = 100 mA; VCE = 10 V;
−
GHz
f = 500 MHz; Tamb = 25 °C
GUM
maximum unilateral power gain
(note 1)
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
15
11
−
−
dB
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
Vo
d2
output voltage
note 2
note 3
note 4
note 5
−
−
−
−
750
800
−55
−57
−
−
−
−
mV
mV
dB
second order intermodulation
distortion
dB
Notes
2
s21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
--------------------------------------------------------
(1 – s11 2)(1 – s22
)
2
2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
4. IC = 60 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vq = Vo = 50 dBmV;
f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz.
5. IC = 60 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vq = VO = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1999 Aug 24
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
V
CC
C4
L6
C5
C7
L5
V
BB
C3
R1
C6
L3
output
75
R2
Ω
C1
L1
L2
L4
input
75
DUT
Ω
C2
R3
R4
MBB284
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
10 nF
DIMENSIONS
CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor
2222 590 08627
2222 851 12108
2222 629 08103
C2, C7
C4 (note 1)
L1
multilayer ceramic capacitor
miniature ceramic plate capacitor
microstrip line
1 pF
10 nF
75 Ω
length 7mm;
width 2.5 mm
L2
microstrip line
75 Ω
length 22mm;
width 2.5 mm
L3 (note 1)
L4
1.5 turns 0.4 mm copper wire
microstripline
int. dia. 3 mm;
winding pitch 1 mm
75 Ω
length 19 mm;
width 2.5 mm
L5
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
5 µH
3122 108 20153
L6 (note 1)
R1
≈25 nH
10 kΩ
200 Ω
27 Ω
length 30 mm
2322 180 73103
2322 180 73201
2322 180 73279
R2 (note 1)
R3, R4
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2);
thickness 1⁄16 inch; thickness of copper sheet 1⁄32 inch.
1999 Aug 24
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
V
V
CC
BB
C3
C5
R1
L5
R3
R4
C1
C6
L3
75 Ω
input
75 Ω
output
L4
L1
L2
C2
C7
C4
R2
L6
MBB299
80 mm
60 mm
MBB298
MBB297
Fig.3 Intermodulation test circuit printed circuit board.
5
1999 Aug 24
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB336
MBB361
1.2
120
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
80
40
0
0
0
0
50
100
150
200
C)
40
80
120
160
(mA)
o
T
(
I
C
s
VCE = 10 V; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB381
MBB357
8
3
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
2
4
2
0
1
0
0
40
80
120
160
0
4
8
12
16
V
20
(V)
I
(mA)
C
CE
VCE = 10 V; f = 500 MHz; Tj = 25 °C
IE = 0; f = 1 MHz; Tj = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
Fig.7 Transition frequency as a function of
collector current.
1999 Aug 24
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB386
MBB385
40
45
handbook, halfpage
handbook, halfpage
d
im
(dB)
G
UM
(dB)
50
30
55
60
20
10
65
0
70
20
2
4
3
40
60
80
100
120
(mA)
10
10
10
10
f (MHz)
I
C
VCE = 10 V; Vo = 800 mV; f(p+q−r) = 443.25 MHz; Tamb = 25 °C.
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.8 Maximum unilateral power gain as a
function of frequency.
Fig.9 Intermodulation distortion as a function of
collector current.
MBB383
MBB382
45
45
handbook, halfpage
handbook, halfpage
d
d
im
2
(dB)
(dB)
50
50
55
60
55
60
65
70
65
70
20
40
60
80
100
120
(mA)
20
40
60
80
100
120
(mA)
I
I
C
C
VCE = 10 V; Vo = 750 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C.
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 °C.
Fig.10 Intermodulation distortion as a function of
collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB384
45
handbook, halfpage
d
2
(dB)
50
55
60
65
70
20
40
60
80
100
120
(mA)
I
C
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 °C.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
50
0
25
100
10
250
+ j
10
25
50
100
250
0
– j
250
10
3 GHz
100
25
MBB380
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
o
o
150
30
50 40 30 20 10
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB286
90
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.14 Common emitter forward transmission coefficient (S21).
9
1999 Aug 24
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
o
90
o
o
60
120
o
o
150
30
0.1 0.2 0.3 0.4 0.5 0.6
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB285
90
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
25
100
10
250
0
+ j
– j
10
25
50
100
250
0
250
10
3 GHz
100
25
MBB379
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22).
10
1999 Aug 24
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.17 SOT223.
1999 Aug 24
11
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 24
12
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
13
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NOTES
1999 Aug 24
15
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67
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp16
Date of release: 1999 Aug 24
Document order number: 9397 750 06337
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