933978490112 [NXP]
TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933978490112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总16页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF368
VHF push-pull power MOS
transistor
1998 Jul 29
Product specification
Supersedes data of September 1992
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
FEATURES
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
1
2
d
2
ndbook, halfpage
• Gold metallization ensures
excellent reliability.
g
g
2
s
1
d
1
5
5
DESCRIPTION
3
4
MBB157
MSB008
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
Top view
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINNING - SOT262A1
Product and environmental safety - toxic materials
PIN
DESCRIPTION
drain 1
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
5
drain 2
gate 1
gate 2
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
∆Gp
(dB)
(note 1)
ηD
(%)
f
VDS
(V)
PL
(W)
Gp
(dB)
MODE OF OPERATION
CW, class-AB
(MHz)
225
32
300
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 29
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
VDSS
VGSS
ID
drain-source voltage
gate-source voltage
drain current (DC)
−
−
−
65
V
±20
25
V
A
Ptot
Tstg
Tj
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
500
150
200
W
°C
°C
storage temperature
junction temperature
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
0.35
K/W
Rth mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
0.15
K/W
MRA933
MGE616
2
10
500
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
400
(2)
(1)
(2)
(1)
300
200
10
100
0
1
2
1
10
10
0
40
80
120
160
V
(V)
DS
T
(°C)
h
(1) Current in this area may be limited by RDSon
(2) Tmb = 25 °C.
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
1998 Jul 29
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per transistor section
V(BR)DSS drain-source breakdown voltage
IDSS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VGS = 0; ID = 100 mA
VGS = 0; VDS = 32 V
VGS = ±20 V; VDS = 0
ID = 100 mA; VDS = 10 V
65
−
−
−
−
−
−
V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
−
−
2
−
5
mA
µA
V
IGSS
1
VGSth
∆VGS
4.5
100
gate-source voltage difference of ID = 100 mA; VDS = 10 V
both transistor sections
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
ID = 8 A; VDS = 10 V
5
7.5
−
S
gfs1/gfs2
forward transconductance ratio
of both transistor sections
0.9
−
1.1
RDSon
IDSX
Cis
drain-source on-state resistance ID = 8 A; VDS = 10 V
−
−
−
−
−
−
0.1
37
0.15
−
Ω
on-state drain current
input capacitance
VGS = 10 V; VDS = 10 V
A
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
495
340
40
−
pF
pF
pF
pF
Cos
output capacitance
−
Crs
feedback capacitance
drain-flange capacitance
−
Cd-f
5.4
−
MGP229
MGP230
0
60
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
I
D
(A)
−1
−2
−3
40
20
−4
−5
0
−1
10
1
10
0
5
10
15
20
I
(A)
V
(V)
D
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1998 Jul 29
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP231
MGP234
200
1500
handbook, halfpage
handbook, halfpage
R
DSon
C
(mΩ)
(pF)
150
1000
C
C
is
100
50
500
os
0
0
0
50
100
150
10
20
30
40
T (°C)
V
(V)
DS
j
VGS = 10 V; ID = 8 A.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
function of junction temperature; typical
values per section.
MGP232
600
handbook, halfpage
C
rs
(pF)
400
200
0
0
10
20
30
40
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1998 Jul 29
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V.
∆Gp
(dB)
(note 1)
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
CW, class-AB
225
32
2 × 250
300
>12
>1
>55
typ. 13.5
typ. 13
typ. 14
typ. 15
typ. 0.4
typ. 0.7
typ. 0.2
typ. 0.5
typ. 62
typ. 68
typ. 60
typ. 70
225
225
175
28
35
28
2 × 250
2 × 250
2 × 250
300
300
300
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 32 V; f = 225 MHz at rated output power.
1998 Jul 29
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP239
MGP241
20
80
handbook, halfpage
handbook, halfpage
η
G
p
D
(%)
(dB)
16
60
12
8
40
20
4
0
0
0
100
200
300
400
P
500
(W)
100
200
300
400
P
500
(W)
L
L
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.9 Power gain as a function of load power;
typical values per section.
Fig.10 Efficiency as a function of load power;
typical values per section.
MGP240
500
handbook, halfpage
P
L
(W)
400
300
200
100
0
0
10
20
30
P
(W)
IN
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);
f = 225 MHz.
solid line: Th = 25 °C. dotted line: Th = 70 °C.
Fig.11 Load power as a function of input power;
typical values per section.
1998 Jul 29
7
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a
V
DD1
C16
R1
C12
C17
A
C8
R7
L12
C18
R2
C9
C13
C6
L13
L16
R3
C25
D.U.T.
L10
C29
L18
L20
L22
L8
L1
L4
L6
C1
C2
50 Ω
output
50 Ω
input
L2
C4
C5
C3
L23
C22
L11
C23
C24
C28
C27
C30
L3
L5
L7
L9
R4
L17
L14
L19
L21
L24
C26
C7
C14
C10
C19
R5
C11
R8
L15
C20
A
IC1
C33
C15
R9
V
DD1
R6
C21
C34
C32
C31
MGP211
V
DD2
f = 225 MHz.
Fig.12 Test circuit for class-AB operation.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
List of components class-AB test circuit (see Figs 12 and 13)
COMPONENT
C1, C2
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE No.
multilayer ceramic chip capacitor
(note 1)
2 × 56 pF in
parallel + 18 pF,
500 V
C3
C4
film dielectric trimmer
2 to 9 pF
2222 809 09005
multilayer ceramic chip capacitor
(note 1)
47 pF, 500 V
C5
film dielectric trimmer
5 to 60 pF
2222 809 08003
2222 852 47104
C6, C7, C9, C10,
multilayer ceramic chip capacitor
1 nF, 500 V
C12, C15, C31, C34 (note 1)
C8, C11, C16, C21, multilayer ceramic chip capacitor
100 nF, 50 V
C32
(note 1)
C17, C20, C33
C22
electrolytic capacitor
10 µF, 63 V
multilayer ceramic chip capacitor
(note 1)
82 pF, 500 V
C23
multilayer ceramic chip capacitor
(note 1)
10 pF + 30 pF in
parallel, 500 V
C24, C28
C25, C26
film dielectric trimmer
2 to 18 pF
2222 809 09006
multilayer ceramic chip capacitor
(note 1)
39 pF + 47 pF in
parallel, 500 V
C27
multilayer ceramic chip capacitor
(note 1)
18 pF, 500 V
C29, C30
multilayer ceramic chip capacitor
(note 1)
3 × 100 pF in
parallel, 500 V
L1, L3, L22, L24
L2, L23
stripline (note 2)
50 Ω
50 Ω
4.8 × 80 mm
semi-rigid cable (note 3)
ext. conductor
length 80 mm
ext. dia 3.6 mm
L4, L5
stripline (note 2)
stripline (note 2)
stripline (note 2)
stripline (note 2)
43 Ω
6 × 32.5 mm
6 × 10.5 mm
6 × 3 mm
L6, L7
43 Ω
L8, L9
43 Ω
L10, L11
L12, L15
43 Ω
6 × 10.5 mm
4312 020 36642
grade 3B Ferroxcube wideband
HF choke
2 in parallel
L13, L14
2 turns enamelled 1.6 mm copper wire 25 nH
space 2.5 mm
int. dia. 5 mm
leads 2 × 7 mm
L16, L17
L18, L19
L20, L21
R1, R6
stripline (notes 2 and 4)
stripline (notes 2 and 4)
stripline (notes 2 and 4)
10 turns potentiometer
metal film resistor
43 Ω
6 × 3 mm
6 × 35 mm
6 × 9 mm
43 Ω
43 Ω
50 kΩ
R2, R5
0.4 W, 1 kΩ
0.4 W, 536 Ω
R3, R4
metal film resistor
1998 Jul 29
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
COMPONENT
R7, R8
DESCRIPTION
metal film resistor
VALUE
DIMENSIONS CATALOGUE No.
1 W, ±5%, 10 Ω
1 W, 3.16 kΩ
R9
metal film resistor
IC1
voltage regulator 78L05
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre
PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large
RF currents.
1998 Jul 29
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
130
119
100
to R1, R6
C31
C32
C16
C12
IC1
R9
C13
C18
+V
DD1
L12
R7
C17
C34
C33
L12
L22
L1
L2
slider R1
C9
C6
L13
R2
+V
DD1
C8
hollow rivet
L18
R3
L8
L10
C1
C29
C25
L16
L20
L4
L5
L6
C23
C24
L17
C27
hollow rivets
hollow rivets
C4
L7
C22
C28
L21
C5
C3
L19
C26
L14
C30
C2
L9
L11
R4
R5
C10
C7
C11
+V
DD2
L24
L3
slider R6
L15
L23
R8
C20
C19
L15
copper strap
copper strap
C14
C15
C21
MGP213
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
1998 Jul 29
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP242
MGP243
2
2
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
r
i
Z
L
(Ω)
R
L
1
0
1
X
L
x
i
−1
−2
150
0
150
200
250
200
250
f (MHz)
f (MHz)
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
MGP244
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
150
200
250
f (MHz)
Class-AB operation; VDS = 32 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); PL = 300 W.
Fig.16 Power gain as a function of frequency;
typical values per section.
1998 Jul 29
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A1
D
A
F
B
U
1
q
C
C
w
2
H
M
c
1
1
2
E
E
H
p
U
1
2
5
w
M
A
B
1
A
3
4
w
3
b
M
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
e
E
E
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
2
1
2
5.85
5.58
5.77
5.00
21.98
21.71
10.27 10.29 1.78 20.58 17.02 3.28
10.05 10.03 1.52 20.06 16.51 3.02
2.85
2.59
34.17 9.91
33.90 9.65
0.16
0.10
27.94
1.100
0.51
0.02
1.02 0.25
0.04 0.01
mm
11.05
0.435
0.230
0.220
0.227
0.197
0.865
0.855
0.404 0.405 0.070 0.81
0.396 0.395 0.060 0.79
0.129 0.112
0.119 0.102
0.390
0.380
0.006
0.004
0.67
0.65
1.345
1.335
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT262A1
97-06-28
1998 Jul 29
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 29
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
NOTES
1998 Jul 29
15
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Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jul 29
Document order number: 9397 750 04188
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