933984380602 [NXP]
IC 16 X 4 STANDARD SRAM, 8 ns, PDIP16, 0.300 INCH, PLASTIC, MO-001AE, SOT-38-1, DIP-16, Static RAM;
| 型号： | 933984380602 |
| 厂家： | 
NXP |
| 描述： | IC 16 X 4 STANDARD SRAM, 8 ns, PDIP16, 0.300 INCH, PLASTIC, MO-001AE, SOT-38-1, DIP-16, Static RAM 静态存储器 光电二极管 |
| 文件： | 总15页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
74F219A
64-bit TTL bipolar RAM, non-inverting
(3-State)
Product specification
IC15 Data Handbook
1996 Jan 05
Philips
Semiconductors
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
FEATURES
APPLICATIONS
• High speed performance
• Replaces 74F219
• Scratch pad memory
• Buffer memory
• Address access time: 8ns max vs 28ns for 74F219
• Power dissipation: 4.3mW/bit typ
• Schottky clamp TTL
• Push down stacks
• Control store
PIN CONFIGURATION
• One chip enable
• Non–Inverting outputs (for inverting outputs see 74F189A)
• 3–state outputs
• 74F219A in 150 mil wide SO is preferred options for new designs
1
16
V
A0
CC
2
3
4
5
6
7
8
15 A1
14 A2
CE
WE
13
D0
Q0
D1
A3
12 D3
11
• C3F219A in 300 mil wide SOL replaces 74F219 in existing
designs
Q3
10 D2
Q2
DESCRIPTION
Q1
The 74F219A is a high speed, 64–bit RAM organized as a 16–word
by 4–bit array. Address inputs are buffered to minimize loading and
are fully decoded on chip. The outputs are in high impedance state
whenever the chip enable (CE) is high. The outputs are active only
in the READ mode (WE = high) and the output data is the
complement of the stored data.
9
GND
SF00307
TYPE
TYPICAL ACCESS TIME
TYPICAL SUPPLY CURRENT(TOTAL)
74F219A
5.0ns
55mA
ORDERING INFORMATION
ORDER CODE
COMMERCIAL RANGE
= 5V ±10%, T = 0°C to +70°C
DESCRIPTION
DRAWING NUMBER
V
CC
amb
16-pin plastic Dual In-line Package
16-pin plastic Small Outline (150mil)
N74F219AN
N74F219AD
C3F219AD
SOT38-4
SOT109-1
SOT162–1
16-pin plastic Small Outline Large (300mil)
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
DESCRIPTION
74F (U.L.)
HIGH/LOW
LOAD VALUE
HIGH/LOW
D0 – D3
A0 – A3
CE
Data inputs
1.0/1.0
1.0/1.0
1.0/2.0
1.0/2.0
150/40
20µA/0.6mA
20µA/0.6mA
20µA/1.2mA
20µA/1.2mA
3mA/24mA
Address inputs
Chip enable input (active low)
Write enable input (active low)
Data outputs
WE
Q0 – Q3
NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state.
2
1996 Jan 05
853-1308 16196
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
LOGIC SYMBOL
IEC/IEEE SYMBOL
RAM 16X4
4
6
10 12
1
0
1
15
0
A
14
13
D0 D1 D2 D3
15
1
15
14
13
2
A0
A1
A2
A3
CE
2
3
G1
1 EN [READ]
1 C2 [WRITE]
3
WE
4
6
5
Q0 Q1 Q2 Q3
A,2D
A
7
9
10
12
5
7
9
11
V
= pin 16
CC
11
GND = pin 8
SF00308
SF00301
LOGIC DIAGRAM
D0 D1 D2 D3
10 12
4
6
3
2
WE
CE
Data buffers
1
A0
A1
A2
A3
15
14
13
16–word x 4–bit
memory cell
array
Address
Decoder
Decoder
Drivers
Output buffers
5
7
9
11
Q0 Q1 Q2 Q3
V
= Pin 16
CC
GND = Pin 8
SF00309
FUNCTION TABLE
INPUTS
OUTPUT
OPERATING
MODE
CE WE Dn
Q
n
L
L
L
H
L
X
L
Stored data
Read
High impedance
High impedance
High impedance
Write “0”
Write “1”
Disable input
L
H
X
H
X
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
3
1996 Jan 05
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL
PARAMETER
RATING
UNIT
V
V
CC
V
IN
Supply voltage
Input voltage
Input current
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
V
I
IN
mA
V
V
Voltage applied to output in high output state
Current applied to output in low output state
Operating free-air temperature range
Storage temperature range
–0.5 to V
48
OUT
OUT
CC
I
mA
°C
°C
T
amb
0 to +70
T
stg
–65 to +150
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
PARAMETER
UNIT
MIN
4.5
NOM
MAX
V
Supply voltage
5.0
5.5
V
V
CC
IH
IL
V
V
High–level input voltage
Low–level input voltage
Input clamp current
2.0
0.8
–18
–3
V
I
I
I
mA
mA
mA
°C
Ik
High–level output current
Low–level output current
OH
OL
24
T
amb
Operating free-air temperature range
0
+70
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
1
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
2
MIN
TYP
MAX
V
High-level output voltage
V
V
V
= MIN, V = MAX
2.4
2.7
V
V
V
±10%V
±5%V
OH
CC
IL
CC
= MIN, I = MAX
3.4
0.35
0.35
-0.73
IH
OH
CC
V
OL
Low-level output voltage
= MIN, V = MAX
0.50
±10%V
CC
IL
CC
V
V
V
V
V
= MIN, I = MAX
0.50
-1.2
100
20
V
±5%V
IH
OL
CC
V
IK
Input clamp voltage
= MIN, I = I
IK
V
CC
CC
CC
CC
I
I
I
I
Input current at maximum input voltage
High–level input current
= MAX, V = 7.0V
µA
µA
mA
mA
I
I
= MAX, V = 2.7V
IH
IL
I
Low–level input current
others
= MAX, V = 0.5V
-0.6
-1.2
I
CE, WE
Offset output current,
high–level voltage applied
µA
µA
I
I
V
V
= MAX, V = 2.7V
50
OZH
CC
I
Offset output current,
low–level voltage applied
= MAX, V = 0.5V
–50
OZL
CC
I
3
I
I
Short-circuit output current
Supply current (total)
Input capacitance
V
CC
V
CC
V
CC
V
CC
= MAX
-60
-150
80
mA
mA
pF
OS
= MAX, CE = WE = GND
55
4
CC
C
= 5V, V = 2.0V
IN
IN
C
Output capacitance
= 5V, V
= 2.0V
OUT
7
pF
OUT
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V = 5V, T = 25°C.
CC
amb
3. Not more than one output should be shorted at a time. For testing I , the use of high-speed test apparatus and/or sample-and-hold
OS
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I tests should be performed last.
OS
4
1996 Jan 05
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
AC ELECTRICAL CHARACTERISTICS
LIMITS
T
V
= +25°C
= +5.0V
T
V
= 0°C to +70°C
= +5.0V ± 10%
amb
CC
amb
CC
TEST
CONDITION
SYMBOL
PARAMETER
UNIT
C = 50pF, R = 500Ω
C = 50pF, R = 500Ω
L L
L
L
MIN
TYP
MAX
MIN
MAX
Propagation delay
An to Qn
t
t
2.5
2.0
5.0
4.5
8.0
8.0
2.5
2.0
8.0
8.0
PLH
PHL
Access time
Waveform 1
Waveform 2
Waveform 3
Waveform 4
Waveform 4
ns
ns
ns
ns
ns
t
t
Enable time
CE to Qn
1.5
2.5
3.0
4.0
6.0
7.0
1.5
2.0
7.0
7.5
PZH
PZL
Disable time
CE to Qn
t
t
2.5
1.5
4.5
3.0
7.0
5.5
2.0
1.0
8.0
6.0
PHZ
PLZ
t
t
Enable time
WE to Qn
2.0
3.0
3.5
4.5
6.5
7.5
1.5
2.5
7.0
8.0
PZH
PZL
Write recovery time
Disable time
WE to Qn
t
t
3.0
1.5
5.0
3.5
8.0
6.0
2.5
1.5
9.0
7.0
PHZ
PLZ
AC SETUP REQUIREMENT
LIMITS
T
V
= +25°C
= +5.0V
T
V
= 0°C to +70°C
= +5.0V ± 10%
CC
amb
CC
amb
TEST
CONDITION
SYMBOL
PARAMETER
UNIT
C = 50pF, R = 500Ω
C = 50pF, R = 500Ω
L L
L
L
MIN
TYP
MAX
MIN
MAX
t
t
(H)
(L)
Setup time, high or low
An to WE
4.5
4.5
5.0
5.0
su
su
Waveform 4
Waveform 4
Waveform 4
Waveform 4
Waveform 4
Waveform 4
Waveform 4
ns
ns
ns
ns
ns
ns
ns
t (H)
Hold time, high or low
An to WE
0
0
0
0
h
t (L)
h
t
su
t
su
(H)
(L)
Setup time, high or low
Dn to WE
8.0
7.5
9.0
8.5
t (H)
Hold time, high or low
Dn to WE
0
0
0
0
h
t (L)
h
Setup time, low
CE (falling edge) to WE (falling edge)
t
su
(L)
0
0
Hold time, low
WE (falling edge) to WE (rising edge)
t (L)
h
6.5
7.0
7.5
8.0
Pulse width, low
WE
t (L)
w
5
1996 Jan 05
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
AC WAVEFORMS FOR READ CYCLES
For all waveforms, V = 1.5V.
M
An
V
M
t
PHL
Qn
V
M
t
PLH
SP000310
Waveform 1. Read cycle, address access time
CE
Qn
V
M
t
PZH
V
M
t
PZL
SP000311
Waveform 2. Read cycle, chip enable access time
CE
Qn
V
M
t
PHZ
V
M
t
PLZ
SP000312
Waveform 3. Read cycle, chip disable time
6
1996 Jan 05
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
AC WAVEFORMS FOR WRITE CYCLE
An
V
V
M
M
t
(H or L)
t
(H or L)
su
h
V
V
M
Dn
V
M
M
t
( L)
t (H or L)
h
su
V
V
M
M
CE
WE
Qn
t
(H or L)
t ( L)
h
su
t
( L)
w
V
V
M
M
t
t
PHZ
PZH
Hi–Z
V
V
M
M
t
t
PZL
PLZ
NOTE: For all waveforms, V = 1.5V.
M
SP000313
Waveform 4. Write cycle
TEST CIRCUIT AND WAVEFORM
t
w
AMP (V)
90%
V
CC
90%
NEGATIVE
PULSE
V
V
M
M
10%
10%
V
V
OUT
IN
0V
PULSE
GENERATOR
D.U.T.
t
t )
t
t )
THL ( f
TLH ( r
R
C
R
L
t
t )
T
L
t
t )
TLH ( r
THL ( f
AMP (V)
90%
M
90%
POSITIVE
PULSE
V
V
M
10%
10%
0V
Test Circuit for Totem-Pole Outputs
DEFINITIONS:
t
w
Input Pulse Definition
INPUT PULSE REQUIREMENTS
R
L
C
L
R
T
=
=
=
Load resistor;
see AC ELECTRICAL CHARACTERISTICS for value.
Load capacitance includes jig and probe capacitance;
see AC ELECTRICAL CHARACTERISTICS for value.
Termination resistance should be equal to Z
pulse generators.
family
V
rep. rate
t
t
t
amplitude
M
w
TLH
THL
of
OUT
2.5ns 2.5ns
74F
3.0V
1.5V
1MHz
500ns
SF00006
7
1996 Jan 05
Philips Semiconductors
Product specification
64-Bit TTL bipolar RAM, non-inverting (3-State)
74F219A
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
8
1996 Jan 05
Philips Semiconductors
Product specification
64-Bit TTL bipolar RAM, non-inverting (3-State)
74F219A
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
9
1996 Jan 05
Philips Semiconductors
Product specification
64-Bit TTL bipolar RAM, non-inverting (3-State)
74F219A
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
10
1996 Jan 05
Philips Semiconductors
Product specification
64-Bit TTL bipolar RAM, non-inverting (3-State)
74F219A
NOTES
11
1996 Jan 05
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, non-inverting (3-State)
74F219A
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1996
All rights reserved. Printed in U.S.A.
(print code)
Date of release: July 1994
9397-750-05098
Document order number:
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General description
The 74F219A is a high speed, 64–bit RAM organized as a 16–word by 4–bit array. Address inputs are
buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever
the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data
is the complement of the stored data.
Catalog by
System
Cross-reference
Packages
"
"
"
End of Life
information
Distributors Go
Here!
Models
SoC solutions
"
"
Features
● High speed performance
● Replaces 74F219
"
"
● Address access time: 8ns max vs 28ns for 74F219
● Power dissipation: 4.3mW/bit typ
● Schottky clamp TTL
● One chip enable
● Non–Inverting outputs (for inverting outputs see 74F189A)
● 3–state outputs
● 74F219A in 150 mil wide SO is preferred options for new designs
● C3F219A in 300 mil wide SOL replaces 74F219 in existing designs
Applications
● Scratch pad memory
● Buffer memory
● Push down stacks
● Control store
AN202_1: Testing and specifying FAST logic (date 01-Jun-87)
AN2021_1: Thermal considerations for FAST logic products (date 13-Mar-95)
AN203_2: Test Fixtures for High Speed Logic (date 02-Apr-98)
AN216_2: Arbitration in shared resource systems (date 18-Jul-88)
Datasheet
Type number
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
74F219A
64-bit TTL bipolar 1/5/1996
Product
12
102
Download
RAM,
specification
non-inverting
(3-State)
Blockdiagram(s)
Block diagram
of N74F219AN
Parametrics
Type
number
Package Description Propagation Voltage No.
Delay(ns) of
Power
Dissipation Switching
Logic
Output
Drive
Pins Considerations Levels Capability
64-Bit TTL
Bipolar RAM;
Non-Inverting
(3-State)
SOT109
(SO16)
5 Volts
+
N74F219AD
N74F219AN
6~10
16 None
16 None
TTL
TTL
Low
Low
64-Bit TTL
Bipolar RAM;
Non-Inverting
(3-State)
SOT38-4
(DIP16)
5 Volts
+
6~10
Products, packages, availability and ordering
Type
North
Ordering code Marking/Packing Package Device status Buy online
Discretes packing
number American type
number
(12NC)
info
Standard Marking
N74F219AD N74F219AD-T 9350 182 90118 * Reel Pack,
SMD, 13"
SOT109
(SO16)
-
Full production
Full production
Full production
Standard Marking
9350 182 90602 * Tube
SOT109
(SO16)
-
N74F219AD
(Signetics)
Standard Marking
9339 843 80602 * Tube
(Signetics)
SOT38-4
(DIP16)
order this
-
N74F219AN N74F219AN
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