934019790115 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal;
| 型号： | 934019790115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT81
UHF power transistor
1996 May 09
Product specification
Supersedes data of November 1992
Philips Semiconductors
Product specification
UHF power transistor
BLT81
FEATURES
• SMD encapsulation
• Gold metallization ensures excellent reliability.
handbook, halfpage
4
APPLICATIONS
c
• Hand-held radio equipment in the 900 MHz
communication band.
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
1
2
3
MAM043 - 1
PINNING - SOT223
Top view
PIN
SYMBOL
DESCRIPTION
emitter
1
2
3
4
e
b
e
c
base
emitter
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
7.5
6
1.2
1.2
≥6
≥60
CW, class-B narrow band
900
typ. 6.5
typ. 77
1996 May 09
2
Philips Semiconductors
Product specification
UHF power transistor
BLT81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
open base
9.5
2.5
500
500
2
open collector
collector current (DC)
average collector current
total power dissipation
storage temperature
mA
mA
W
IC(AV)
Ptot
Ts = 110 °C; note 1
Tstg
Tj
−65
+150
175
°C
operating junction temperature
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point Ptot = 2 W; Ts = 110 °C; note 1
32
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MRC094
1
handbook, halfpage
I
C
(A)
−1
10
2
1
10
10
V
(V)
CE
Ts = 110 °C.
Fig.2 DC SOAR.
1996 May 09
3
Philips Semiconductors
Product specification
UHF power transistor
BLT81
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 1 mA
20
9.5
2.5
−
−
−
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA
−
−
V
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.1 mA
VCE = 10 V; VBE = 0
−
−
V
ICES
hFE
Cc
collector leakage current
DC current gain
−
0.1
−
mA
VCE = 5 V; IC = 300 mA; note 1;
VCB = 7.5 V; IE = ie = 0; f = 1 MHz;
VCE = 7.5 V; IC = 0; f = 1 MHz
25
−
−
collector capacitance
feedback capacitance
2.7
1.7
4
pF
pF
Cre
−
3
Note
1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02.
MRC086
MRC090
6
100
handbook, halfpage
handbook, halfpage
h
FE
C
c
(pF)
80
60
40
20
0
4
2
0
0
2
4
6
8
10
(V)
0
100
200
300
400
V
I
(mA)
CB
C
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 May 09
4
Philips Semiconductors
Product specification
UHF power transistor
BLT81
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
≥6
≥60
7.5
6
1.2
1.2
CW, class-B narrow band
900
typ. 8
typ. 6.5
typ. 77
typ. 77
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 1.2 W; Ts ≤ 60 °C.
MRC093
MRC088
100
2.5
10
(1)
handbook, halfpage
handbook, halfpage
G
η
G
p
P
C
p
L
(%)
(dB)
8
(W)
2.0
(2)
(4)
η
C
80
(1)
(2)
(3)
60
40
1.5
1.0
0.5
6
4
2
20
0
0
0
0
0
100
200
300
400
500
(mW)
0.4
0.8
1.2
1.6
2.0
P
P
(W)
IN
L
Class-B; f = 900 MHz; Ts ≤ 60 °C.
Class-B; f = 900 MHz; Ts ≤ 60 °C.
(1) VCE = 7.5 V. (2) VCE = 6 V.
(1) VCE = 7.5 V.
(2) VCE = 6 V.
(3) VCE = 7.5 V.
(4) VCE = 6 V.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
Fig.6 Load power as a function of input
power; typical values.
1996 May 09
5
Philips Semiconductors
Product specification
UHF power transistor
BLT81
Test circuit information
C2
L1
C4
L4
C6
L5
C8
C10
L10
C14
C1
L6
L8
50 Ω
50 Ω
input
output
DUT
C3
L2
C5
C7
C11
C13
L7
L9
R1
L3
V
CC
R2
C12
C9
MEA899
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
1996 May 09
6
Philips Semiconductors
Product specification
UHF power transistor
BLT81
List of components used in test circuit (see Figs 7 and 8)
COMPONENT
C1, C14
C2
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip capacitor; note 1 100 pF
multilayer ceramic chip capacitor; note 1 3 pF
C3, C5, C11, C13 film dielectric trimmer
1.4 to 5.5 pF
multilayer ceramic chip capacitor; note 1 5.6 pF
multilayer ceramic chip capacitor; note 1 5.1 pF
2222 809 09004
C4
C6, C7, C10
C8
C9
C12
L1
multilayer ceramic chip capacitor; note 1 3.6 pF
multilayer ceramic chip capacitor; note 1 220 pF
multilayer ceramic chip capacitor;
stripline; note 2
1 nF
50 Ω
length 26.6 mm
width 4.85 mm
L2
10 turns enamelled 0.6 mm copper wire 250 nH
int. dia. 4.5 mm
leads 2 × 5 mm
L3, L9
L4
grade 3B Ferroxcube wideband
HF choke
4312 020 36640
stripline; note 2
50 Ω
length 18 mm
width 4.85 mm
L5
stripline; note 2
75 Ω
length 3.5 mm
width 2.5 mm
L6
stripline; note 2
50 Ω
length 10 mm
width 4.85 mm
L7
4 turns enamelled 0.6 mm copper wire
stripline; note 2
65 nH
50 Ω
int. dia. 4.5 mm
leads 2 × 5 mm
L8
length 15 mm
width 4.85 mm
L10
stripline; note 2
50 Ω
length 24.6 mm
width 4.85 mm
R1, R2
metal film resistor
10 Ω, 0.25 W
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness
1⁄16"; thickness of the copper sheet 35 µm.
1996 May 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLT81
140
strap
strap
80
rivets
(14x)
strap
mounting
screws
(8x)
strap
V
CC
L9
L3
C12
C9
L6
R2
L2
R1
C4
C6
C2
L7
L8
C10
L5
C1
L1
L4
L10
C14
C13
C5
C11
C3
C7
C8
MEA898
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
1996 May 09
8
Philips Semiconductors
Product specification
UHF power transistor
BLT81
MRC091
MRC092
20
10
handbook, halfpage
handbook, halfpage
R
L
Z
Z
L
i
(Ω)
(Ω)
8
16
r
i
6
12
8
4
x
i
X
L
2
4
0
800
0
800
840
880
920
960
1000
840
880
920
960
1000
f (MHz)
f (MHz)
Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.
Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
MRC089
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
handbook, halfpage
Z
i
Z
MBA451
L
800
840
880
920
960
1000
f (MHz)
Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
Fig.12 Definition of transistor impedance.
1996 May 09
9
Philips Semiconductors
Product specification
UHF power transistor
BLT81
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.13 SOT223.
1996 May 09
10
Philips Semiconductors
Product specification
UHF power transistor
BLT81
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 09
11
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SCDS48
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
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The information presented in this document does not form part of any quotation
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127061/1200/02/pp12
Date of release: 1996 May 09
9397 750 00835
Document order number:
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