934049330118 [NXP]
600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC;
| 型号： | 934049330118 |
| 厂家： | 
NXP |
| 描述： | 600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC 三端双向交流开关 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
triacs in a plastic envelope, suitable
forsurfacemounting, intended foruse
in general purpose bidirectional
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT136S (or BT136M)- 500E 600E 800E
VDRM
Repetitive peak off-state
500
600
800
V
switching
and
phase
control
voltages
applications, where high sensitivity is
required in all four quadrants.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
4
25
4
25
4
25
A
A
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
Standard Alternative
tab
S
M
1
2
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
T2
T1
2
3
G
1
3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tmb ≤ 107 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
4
A
t = 20 ms
-
-
-
25
27
3.1
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
July 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
75
3.0
3.7
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
pcb (FR4) mounted; footprint as in Fig.14
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
3.0
10
15
20
mA
mA
mA
mA
mA
V
V
V
mA
-
-
2.5
4.0
2.2
1.4
0.7
0.4
0.1
15
-
20
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 5 A
-
15
-
1.70
1.5
-
VD = 12 V; IT = 0.1 A
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-
-
50
2
-
-
V/µs
µs
July 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
IT(RMS) / A
Ptot / W
8
Tmb(max) / C
5
4
3
2
1
0
101
104
107
110
113
116
119
122
125
7
107 C
= 180
120
1
6
5
4
3
2
1
0
90
60
30
0
1
2
3
4
5
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
IT(RMS) / A
ITSM / A
12
10
8
1000
100
10
I
TSM
time
I
T
T
Tj initial = 25 C max
6
dIT/dt limit
4
T2- G+ quadrant
2
0
10us
100us
1ms
T / s
10ms
100ms
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
30
25
20
15
10
5
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
July 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
IGT(Tj)
IGT(25 C)
IT / A
12
10
8
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
2.5
2
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
unidirectional
bidirectional
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
July 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
seating plane
2.38 max
0.93 max
1.1
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
July 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1997
6
Rev 1.000
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Glass passivated, sensitive gate triacs in a plastic envelope, suitable f
intended for use in general purpose bidirectional switching and phase
where high sensitivity is required in all four quadrants.
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BT136S Triacs sensitive gate
series
E;
BT136M
series
E
01-Jul-97 Product
Specification
6
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BT136S series
E; BT136M series E
BT136S series
BT136S-600E
Marking * Reel
Pack, SMD,
BT136S-600E
T/R
9340 493 30118
SOT42
E; BT136M series E
13"
Standard
BT136S-800E
Marking * Reel
Pack, SMD,
BT136S-800E
T/R
9340 493 40118
SOT42
13"
Please read information about some discontinued variants of this prod
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