934054080118 [NXP]
10A, 40V, SILICON, RECTIFIER DIODE;
| 型号： | 934054080118 |
| 厂家： | 
NXP |
| 描述： | 10A, 40V, SILICON, RECTIFIER DIODE 二极管 |
| 文件： | 总7页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
VR = 40 V/ 45 V
IF(AV) = 10 A
k
tab
a
3
VF ≤ 0.57 V
GENERAL DESCRIPTION
PINNING
SOT428
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
no connection
cathode1
tab
1
2
The PBYR1045D series is supplied
in the surface mounting SOT428
package.
3
anode
2
tab
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR10
40D
45D
VRRM
VRWM
Peak repetitive reverse
-
-
40
45
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
40
40
45
45
VR
T
mb ≤ 113 ˚C
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Tmb ≤ 134 ˚C
square wave; δ = 0.5; Tmb ≤ 134 ˚C
10
20
IFRM
IFSM
Repetitive peak forward
current
-
A
Non-repetitive peak forward t = 10 ms
-
-
100
110
A
A
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current
-
-
1
A
Operating junction
temperature
150
175
˚C
˚C
Tstg
Storage temperature
- 65
1 It is not possible to make connection to pin 2 of the SOT428 package.
July 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
-
-
-
2
-
K/W
K/W
Thermal resistance junction pcb mounted, minimum footprint, FR4
50
to ambient
board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
-
-
-
-
-
-
0.5
0.57
0.8
V
V
0.74
0.65 0.84
V
IR
Reverse current
VR = VRWM
0.2
22
350
1.3
35
-
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
July 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
Forward dissipation, PF (W)
10
Tmb(max) (C)
Reverse current, IR (mA)
130
134
138
142
146
150
100
10
D = 1.0
0.5
Vo = 0.34 V
Rs = 0.023 Ohms
125 C
100 C
75 C
8
0.2
0.1
6
4
2
0
1
50 C
t
T
p
p
t
I
D =
0.1
t
T
Tj = 25 C
0.01
0
5
10
15
0
25
Reverse voltage, VR (V)
50
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Forward dissipation, PF (W)
Tmb(max) (C)
a = 1.57
Cd / pF
130
134
10
8
1000
100
10
Vo = 0.34 V
Rs = 0.023 Ohms
1.9
2.2
2.8
4
6
138
142
146
150
4
2
0
1
10
100
0
2
4
6
8
10
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-mb (K/W)
10
Forward current, IF (A)
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
typ
max
0.1
tp
T
tp
P
D =
D
t
T
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1us
10us 100us 1ms
10ms 100ms
1s
10s
Forward voltage, VF (V)
pulse width, tp (s)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
July 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
1.1
2.38 max
0.93 max
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.100
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Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
PC/PC-peripherals
The PBYR1045D series is supplied in the surface mounting SOT428 package.
Cross reference
Models
Packages
Features
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Low forward volt drop
l Fast switching
l Reverse surge capability
l High thermal cycling performance
l Low thermal resistance
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PBYR1045D series Rectifier diodes Schottky barrier
01-Jul-98
Product
Specification
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39
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
Partnumber
marking/packing
package device status buy online
SOT428 Full production
Standard Marking * Reel Pack,
SMD, 13"
PBYR1040D PBYR1040D /T3
PBYR1045D PBYR1045D /T3
9340 540 80118
9340 535 20118
Standard Marking * Reel Pack,
SMD, 13"
SOT428 Full production
Please read information about some discontinued variants of this product.
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PBYR1045D series links to the similar products page containing an overview of products that are similar in function or related to the
part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection
guides and products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
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