934054697185 [NXP]
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal;型号: | 934054697185 |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal |
文件: | 总15页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC123E series
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product specification
2003 Apr 10
Supersedes data of 1999 May 21
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
PARAMETER
TYP. MAX. UNIT
• Simplified circuit design
VCEO
collector-emitter
voltage
−
50
V
• Reduction of component count
• Reduced pick and place costs.
IO
output current (DC)
bias resistor
−
100
−
mA
kΩ
kΩ
R1
R2
2.2
2.2
bias resistor
−
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC123EK
PDTC123ES
PDTC123ET
PDTC123EU
SOT346
SOT54 (TO-92)
SOT23
SC-59
SC-43
−
48
PDTA123EK
PDTA123ES
PDTA123ET
PDTA123EU
TC123E
*26(1)
*48(1)
SOT323
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2003 Apr 10
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
DESCRIPTION
PDTC123ES
1
2
3
base
collector
emitter
handbook, halfpage
2
3
R1
1
2
3
1
R2
MAM364
PDTC123EK
PDTC123ET
PDTC123EU
1
2
3
base
emitter
collector
handbook, halfpage
3
3
2
R1
R2
1
1
2
Top view
MDB269
2003 Apr 10
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
50
10
open collector
positive
−
−
−
−
+12
−10
100
100
V
V
negative
IO
output current (DC)
peak collector current
total power dissipation
SOT54
mA
mA
ICM
Ptot
Tamb ≤ 25 °C; note 1
−
−
−
−
500
mW
mW
mW
mW
°C
SOT23
250
SOT346
250
SOT323
200
Tstg
Tj
storage temperature
junction temperature
operating ambient temperature
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Refer to standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
SOT54
SOT23
SOT346
SOT323
250
500
500
625
K/W
K/W
K/W
K/W
Note
1. Refer to standard mounting conditions.
2003 Apr 10
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
CE = 30 V; IB = 0; Tj = 150 °C
MIN.
TYP. MAX. UNIT
ICBO
ICEO
collector-base cut-off current
collector-emitter cut-off current
−
−
100
1
nA
µA
µA
mA
−
−
V
−
−
50
2
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
−
VCE = 5 V; IC = 20 mA
30
−
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
150
0.5
−
mV
V
input-off voltage
input-on voltage
input resistor
IC = 1 mA; VCE = 5 V
−
1.2
1.6
2.2
IC = 20 mA; VCE = 0.3 V
2
V
1.54
2.86
kΩ
R2
-------
R1
resistor ratio
0.8
1
1.2
2.5
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
pF
2003 Apr 10
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT346
E
A
D
B
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w M
B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
A
p
1
p
1
E
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
1.9
0.95
0.2
0.2
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-07-17
SOT346
TO-236
SC-59
2003 Apr 10
6
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
2003 Apr 10
7
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Apr 10
8
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2003 Apr 10
9
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 10
10
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
NOTES
2003 Apr 10
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2003 Apr 10
Document order number: 9397 750 11014
it Q
Philips Semiconductors Home
ProducBuy
MySemContac
Product Information
catalogonline
Information as of 2003-04-22
My.Semiconductors.COM.
Your personal service from Use right mouse button to
Philips Semiconductors.
Please register now !
Stay informed
PDTC123E series;
NPN resistor-
equipped
download datasheet
Download datasheet
Products
transistors; R1 = 2.2
kOhm, R2 = 2.2
kOhm
MultiMarket
Semiconductors
•
•
•
Product Selector
Catalog by
Function
General description
Features
Applications
Datasheet
Catalog by
System
Buy online
Parametrics
Support & tools
Similar products
Email/translate
Block diagram
Products & packages
•
Cross-reference
Packages
•
•
General description
End of Life
information
Distributors Go
Here!
•
•
NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
Models
•
•
Features
SoC solutions
●
●
●
●
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
Applications
●
●
●
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
AN10116_2: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications (date 05-Aug-02)
Datasheet
Type number
Title
Publication release Datasheet status
date
Page
count
File
size
(kB)
Datasheet
PDTC123E series NPN resistor-
equipped
4/10/2003
Product specification 12
67
Download
transistors; R1 =
2.2 kOhm, R2 =
2.2 kOhm
Parametrics
Type
number
Package hFE hFE POLARITY IO
VCEO Ptot
max(V) max(mW) RATIO
RES
Complement Input
Resistor(kOhm)
min max
max(mA)
SOT23
(SST3)
PDTC123ET
30 >30 NPN
100
50
250
1
PDTA123ET 2.2
Products, packages, availability and ordering
Type number North
American
Ordering code
(12NC)
Marking/Packing
Package Device status Buy online
Discretes packing
info
type number
SOT346
Standard Marking *
Reel Pack, SMD
PDTC123EK
PDTC123ES
9340 575 51115
9340 575 68126
Full production
Full production
-
-
(SMT3;
MPAK)
SOT54
Standard Marking *
Ammopack, Radial
(SPT; E-1)
Standard Marking *
9340 546 97185 Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
PDTC123ET
/T4
PDTC123ET
Full production
-
Standard Marking *
9340 546 97215 Reel Pack, SMD,
Low Profile
SOT23
(SST3)
PDTC123ET
T/R
Full production
Full production
-
SOT323
Standard Marking *
9340 575 38115
PDTC123EU
(UMT3;
CMPAK)
Reel Pack, SMD
Similar products
PDTC123E series links to the similar products page containing an overview of products that are similar in function
or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog
tree(s), relevant selection guides and products from the same functional category.
Support & tools
Spice model of PDTC123ET
Letter Symbols - Transistors General(date 01-May-99)
Email/translate this product information
●
●
Email this product information.
Translate this product information page from English to:
French
Translate
The English language is the official language used at the semiconductors.philips.com website and webpages. All
translations on this website are created through the use of Google Language Tools and are provided for convenience
purposes only. No rights can be derived from any translation on this website.
About this Web Site
| Copyright © 2003 Koninklijke Philips N.V. All rights reserved. | Privacy Policy |
| Koninklijke Philips N.V. | Access to and use of this Web Site is subject to the following Terms of Use. |
相关型号:
934054698215
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal
NXP
934054699215
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal
NXP
934054701215
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SST3, 3 PIN, BIP General Purpose Small Signal
NXP
934054702215
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SST3, 3 PIN, BIP General Purpose Small Signal
NXP
934054713215
TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054713235
TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054715215
TRANSISTOR 1210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054715235
TRANSISTOR 1210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054717235
TRANSISTOR 340 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054718215
TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
934054718235
TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明