934055732215 [NXP]
DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode;
| 型号： | 934055732215 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Signal Diode |
| 文件： | 总11页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
BAT754 series
Schottky barrier (double) diodes
Product specification
2003 Mar 25
Supersedes data of 1999 Aug 05
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
FEATURES
PINNING
PIN
• Very low forward voltage
• Guard ring protected
BAT754
A
C
a1
a2
S
3
• Small plastic SMD package
• Low diode capacitance.
1
2
3
a
n.c.
k
k1
k2
a1
k2
1
2
MLC360
a1, a2 k1, k2 k1, a2
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
Fig.3 BAT754A diode
configuration (symbol).
3
• Protection circuits
• Blocking diodes
• Low power consumption
applications, e.g. hand-held
applications.
3
1
2
1
2
Top view
MGC421
DESCRIPTION
MLC359
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
Fig.1 Simplified outline
(SOT23) and pin
configuration.
Fig.4 BAT754C diode
configuration (symbol).
MARKING
3
3
MARKING
TYPE NUMBER
1
2
n.c.
CODE(1)
1
2
MLC357
BAT754
2K*
2L*
MLC358
BAT754A
BAT754C
BAT754S
2M*
2N*
Fig.2 BAT754 single diode
configuration (symbol).
Fig.5 BAT754S diode
configuration (symbol).
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
2003 Mar 25
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
−
−
−
30
V
IF
continuous forward current
200
300
600
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
t = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
storage temperature
−65
−
+150
125
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+125
ELECTRICAL CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 0.1 mA
−
200
260
340
420
−
mV
mV
mV
mV
mV
µA
IF = 1 mA
−
IF = 10 mA
−
IF = 30 mA
−
IF = 100 mA
600
−
IR
reverse current
VR = 25 V; note 1; see Fig.7
f = 1 MHz; VR = 1 V; see Fig.8
2
Cd
diode capacitance
−
10
pF
Note
1. Pulse test: tp = 300 µs; δ ≤ 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
500
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
K/W
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
GRAPHICAL DATA
MSA892
MSA893
(1)
3
2
10
3
10
handbook, halfpage
I
I
R
(µA)
(1) (2) (3)
F
(mA)
2
10
10
(2)
10
10
(1)
(2) (3)
1
1
1
(3)
10
1
10
0
10
20
30
0
0.4
0.8
1.2
V
(V)
R
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MSA891
15
handbook, halfpage
C
d
(pF)
10
5
0
0
10
20
30
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Mar 25
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Mar 25
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT754 series
NOTES
2003 Mar 25
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2003 Mar 25
Document order number: 9397 750 10968
it Q
Philips Semiconductors Home
ProducBuy
MySemContac
Product Information
catalogonline
Information as of 2003-04-22
My.Semiconductors.COM.
Your personal service from Use right mouse button to
Philips Semiconductors.
Please register now !
Stay informed
BAT754 series;
Schottky barrier
(double) diodes
download datasheet
Download datasheet
Products
General description
Features
Applications
Datasheet
Buy online
Parametrics
Support & tools
Similar products
Email/translate
Block diagram
Products & packages
MultiMarket
Semiconductors
•
•
•
Product Selector
Catalog by
Function
General description
Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage
selection of the BAT54 series. Single diodes and double diodes with different pinning are available.
Catalog by
System
•
Cross-reference
Packages
•
•
Features
End of Life
information
Distributors Go
Here!
•
•
●
●
●
●
Very low forward voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
Models
•
•
SoC solutions
Applications
●
●
●
●
●
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption applications, e.g. hand-held applications.
Datasheet
Type
number
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
BAT754
series
Schottky
barrier
3/25/2003
Product
specification
8
51
Download
(double)
diodes
Parametrics
Type number Package
V max(V) I
max.(mA) V max(mV) C max.(pF) Configuration
R
F(AV) F D
SOT23
BAT754
30
30
30
30
200
200
260@IF=1mA 10@VR=1V 1
260@IF=1mA 10@VR=1V 2 c.a.
260@IF=1mA 10@VR=1V 2 c.c.
260@IF=1mA 10@VR=1V 2 ser.
(SST3)
SOT23
BAT754A
(SST3)
SOT23
BAT754C
200
200
(SST3)
SOT23
BAT754S
(SST3)
Products, packages, availability and ordering
Type
North
Ordering code Marking/Packing Package Device status Buy online
Discretes packing
number
American (12NC)
type
info
number
Standard Marking
9340 557 14215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BAT754
T/R
BAT754
Full production
Full production
Full production
Full production
Standard Marking
9340 557 30215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BAT754A
T/R
BAT754A
BAT754C
BAT754S
Standard Marking
9340 557 31215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BAT754C
T/R
Standard Marking
9340 557 32215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BAT754S
T/R
Similar products
BAT754 series links to the similar products page containing an overview of products that are similar
in function or related to the type number(s) as listed on this page. The similar products page includes
products from the same catalog tree(s), relevant selection guides and products from the same functional
category.
Support & tools
Low power-consumption, small-signal discretes for handheld applications(date 01-Oct-19)
Schottky diodes; Selection guide(date 05-Aug-20)
MEGA Schottky diodes(date 13-Feb-03)
Email/translate this product information
●
●
Email this product information.
Translate this product information page from English to:
Translate
French
The English language is the official language used at the semiconductors.philips.com website and webpages.
All translations on this website are created through the use of Google Language Tools and are provided for
convenience purposes only. No rights can be derived from any translation on this website.
About this Web Site
| Copyright © 2003 Koninklijke Philips N.V. All rights reserved. | Privacy Policy |
| Koninklijke Philips N.V. | Access to and use of this Web Site is subject to the following Terms of Use. |
相关型号：
934055754215
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SST3, 3 PIN, BIP General Purpose Small Signal
NXP
934055759127
TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
NXP
934055768118
TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
NXP
934055781127
TRANSISTOR 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, PLASTIC PACKAGE-3, FET General Purpose Power
NXP
934055802118
TRANSISTOR 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
NXP
934055807118
TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power
NXP
934055808127
TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
NXP
934055811127
TRANSISTOR 28 A, 100 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
NXP
934055815127
TRANSISTOR 100 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, PLASTIC PACKAGE-3, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明