934055995127 [NXP]
600V, 8A, TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN;![934055995127](http://pdffile.icpdf.com/pdf2/p00265/img/icpdf/934055995127_1596892_icpdf.jpg)
型号: | 934055995127 |
厂家: | ![]() |
描述: | 600V, 8A, TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN 局域网 三端双向交流开关 |
文件: | 总6页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL
PARAMETER
MAX. MAX. UNIT
BTA208- 600D
-
BTA208- 600E 800E
BTA208- 600F
800F
800
VDRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
600
V
IT(RMS)
ITSM
8
65
8
65
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-600
6001
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
IT(RMS)
ITSM
RMS on-state current
full sine wave;
8
A
Tmb ≤ 102 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
65
72
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
t = 10 ms
21
A2s
A/µs
dIT/dt
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
100
IGM
PGM
PG(AV)
-
-
-
2
5
0.5
A
W
W
over any 20 ms
period
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
March 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
60
2.0
2.4
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
...E
UNIT
BTA208-
...D
...F
IGT
Gate trigger current2
Latching current
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
T2+ G-
T2- G-
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
15
25
25
25
30
30
30
40
40
mA
mA
mA
IH
VD = 12 V; IGT = 0.1 A
-
15
25
30
mA
VT
On-state voltage
IT = 10 A
-
-
1.65
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current
VD = VDRM(max)
Tj = 125 ˚C
;
-
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
...E
60
MAX. UNIT
BTA208-
VDM = 67% VDRM(max)
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 8 A;
dVcom/dt = 10V/µs; gate
open circuit
...D
...F
dVD/dt
Critical rate of rise of
off-state voltage
;
20
70
-
-
V/µs
dIcom/dt
Critical rate of change of
commutating current
2
5
14
20
A/ms
dIcom/dt
Critical rate of change of
commutating current
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 8 A;
dVcom/dt = 0.1V/µs; gate
open circuit
6
10
-
A/ms
2 Device does not trigger in the T2-, G+ quadrant.
March 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
Tmb(max) / C
= 180
Ptot / W
12
IT(RMS) / A
101
105
109
113
10
8
120
90
102 C
10
1
8
6
4
2
0
60
30
6
4
117
2
121
125
0
-50
0
50
Tmb / C
100
150
0
2
4
6
8
10
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
1000
IT(RMS) / A
25
20
15
10
5
dIT/dt limit
100
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
10
10us
0
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 102˚C.
ITSM / A
VGT(Tj)
VGT(25 C)
70
1.6
I
TSM
time
I
T
60
50
40
30
20
10
0
T
1.4
1.2
1
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of half cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
March 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
IT / A
IGT(Tj)
IGT(25°C)
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
max
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
1.5
1
0.5
0
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj/°C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
IL(Tj)
IL(25 C)
3
unidirectional
2.5
2
1
bidirectional
1.5
1
t
P
D
0.1
p
t
0.5
0
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
IH(Tj)
IH(25C)
3
2.5
2
10
1.5
1
0.5
0
1
60
20
80
40
120
100
140
Tj/˚C
-50
0
50
100
150
Tj / C
Fig.12. Minimum, critical rate of change of
commutating current, dIcom/dt versus junction
temperature,dVcom/dt = 10 V/us
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
March 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA208 series D, E and F
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS3
PRODUCT
STATUS4
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
March 2002
6
Rev 2.000
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