935284504118 [NXP]

40W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO20, PLASTIC, SOT-418-3, HSOP-20;
935284504118
型号: 935284504118
厂家: NXP    NXP
描述:

40W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO20, PLASTIC, SOT-418-3, HSOP-20

放大器 光电二极管 商用集成电路
文件: 总27页 (文件大小:236K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA1565TH  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
Product specification  
2004 Jan 27  
Supersedes data of 2003 Aug 13  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
FEATURES  
GENERAL DESCRIPTION  
Low dissipation due to switching from Single-Ended  
(SE) to Bridge-Tied Load (BTL) mode  
The TDA1565TH is a monolithic power amplifier in a  
20-lead heatsink small outline plastic package. It contains  
two identical 40 W amplifiers. Power dissipation is  
minimized by switching from SE to BTL mode only when a  
higher output voltage swing is needed. The device is  
developed primarily for car radio applications.  
Differential inputs with high Common Mode Rejection  
Ratio (CMRR)  
Mute, standby or operating mode selectable by pin  
Load dump protection circuit  
Short-circuit safe to ground; to supply voltage and  
across load  
Loudspeaker protection circuit  
Thermal protection at high junction temperature  
Device switches to single-ended operation at high  
junction temperature  
Clip detection at 2.5 % THD  
Diagnostic signal indicating clipping, short-circuit  
protection and pre-warning of thermal protection.  
QUICK REFERENCE DATA  
SYMBOL  
VP  
PARAMETER  
supply voltage  
CONDITIONS  
DC-biased  
MIN.  
6.0  
TYP. MAX. UNIT  
14.4  
18  
30  
45  
8
V
non-operating  
load dump  
V
V
IORM  
Iq(tot)  
Istb  
repetitive peak output current  
total quiescent current  
standby current  
A
RL = ∞  
95  
1
150  
50  
150  
mA  
µA  
kΩ  
W
Zi  
differential input impedance  
output power  
90  
25  
37  
120  
31  
40  
60  
26  
80  
65  
Po  
RL = 2 ; THD 0.5 %  
RL = 2 ; THD 10 %  
RL = 2 ; EIAJ  
W
W
Gv  
voltage gain  
25  
27  
dB  
dB  
dB  
mV  
dB  
dB  
CMRR  
SVRR  
VO  
αcs  
common mode rejection ratio  
supply voltage ripple rejection  
DC output offset voltage  
channel separation  
f = 1 kHz; Rs = 0 Ω  
f = 1 kHz; Rs = 0 Ω  
50  
100  
Rs = 0 ; Po = 25 W  
50  
70  
Gv  
channel unbalance  
1
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TDA1565TH  
HSOP20  
plastic, heatsink small outline package; 20 leads; low stand-off  
height  
SOT418-3  
2004 Jan 27  
2
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
BLOCK DIAGRAM  
V
V
P2  
P1  
20  
11  
+
TDA1565TH  
SLAVE  
CONTROL  
7
8
+
OUT2  
OUT2  
channel 2  
MUTE  
+
13  
14  
+
I/V  
IN2  
V/I  
+
+
IN2  
V/I  
60  
k  
60  
kΩ  
V
P
16  
V
ref  
CSE  
25 kΩ  
19  
+
CIN  
60  
kΩ  
60  
kΩ  
+
V/I  
18  
17  
+
IN1  
+
+
V/I  
3
4
IN1  
+
OUT1  
OUT1  
I/V  
MUTE  
channel 1  
+
SLAVE  
CONTROL  
1
n.c.  
n.c.  
n.c.  
n.c.  
9
10  
12  
CLIP DETECTION AND  
THERMAL PROTECTION  
PRE-WARNING  
STANDBY  
LOGIC  
2
15  
6
5
MHC600  
MODE  
DIAG  
GND2  
GND1  
Fig.1 Block diagram.  
3
2004 Jan 27  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
not connected  
n.c.  
1
2
MODE  
mute/standby/operating mode  
selection  
OUT1−  
OUT1+  
GND1  
GND2  
OUT2−  
OUT2+  
n.c.  
3
4
inverting channel 1 output  
non-inverting channel 1 output  
ground 1  
V
20  
1
2
3
4
5
6
7
8
9
n.c.  
P1  
5
CIN 19  
IN118  
IN1+ 17  
CSE 16  
DIAG 15  
IN2+ 14  
IN213  
n.c. 12  
MODE  
OUT1−  
OUT1+  
GND1  
GND2  
OUT2−  
OUT2+  
n.c.  
6
ground 2  
7
inverting channel 2 output  
non-inverting channel 2 output  
not connected  
8
TDA1565TH  
9
n.c.  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
not connected  
VP2  
supply voltage 2  
V
P2  
11  
10 n.c.  
n.c.  
not connected  
IN2−  
IN2+  
DIAG  
CSE  
inverting channel 2 input  
non-inverting channel 2 input  
diagnostic output  
001aaa306  
electrolytic capacitor for SE mode  
non-inverting channel 1 input  
inverting channel 1 input  
common input  
IN1+  
IN1−  
CIN  
Fig.2 Pin configuration.  
VP1  
supply voltage 1  
2004 Jan 27  
4
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
FUNCTIONAL DESCRIPTION  
The TDA1565TH contains two identical amplifiers with  
differential inputs. At low output power (output amplitudes  
of up to 3 V (RMS) at VP = 14.4 V), the device operates as  
a normal SE amplifier. When a larger output voltage swing  
is required, the circuit automatically switches internally to  
BTL operation.  
V
18  
MODE  
(V)  
handbook, halfpage  
Operating  
With a sine wave input signal, the power dissipation of a  
conventional BTL amplifier with an output power of up to  
3 W is more than twice the power dissipation of the  
TDA1565TH (see Fig.10).  
4
During normal use, when the amplifier is driven by typical  
variable signals such as music, the high (BTL) output  
power is only needed for a small percentage of time.  
Assuming that a music signal has a normal (Gaussian)  
amplitude distribution, the power dissipation of a  
conventional BTL amplifier with the same output power is  
approximately 70 % higher (see Fig.11).  
3
2
1
0
Mute  
Standby  
MGR176  
The heatsink must be designed for music signal operation.  
When such a heatsink is used, the IC’s thermal protection  
will disable the BTL mode when the junction temperature  
exceeds 150 °C. In this case the output power is limited to  
10 W per amplifier. The gain of each amplifier is internally  
fixed at 26 dB.  
Fig.3 Switching levels of the mode select pin  
(pin MODE).  
The device can be switched to any of the following modes  
by applying the appropriate voltage to the MODE pin (see  
Fig.3):  
Standby with low standby current (less than 50 µA)  
Mute condition; DC adjusted  
On, operation.  
The diagnostic output indicates the following conditions:  
Clip detection at 2.5 % THD (see Fig.4)  
Short-circuit protection (see Fig.5):  
The device is fully protected against a short-circuit of the  
output pins to ground or to the supply voltage. It is also  
protected against a loudspeaker short-circuit and against  
high junction temperatures. In the event of a permanent  
short-circuit condition, the output stage is repeatedly  
switched on and off with a low duty-cycle resulting in low  
power dissipation.  
– When an output short-circuit occurs (for at least  
10 µs); the output stages are switched off for approx.  
500 ms, after which time the outputs are checked to  
see if a short-circuit condition still exists. During any  
short-circuit condition, the power dissipation is very  
low. During a short-circuit condition pin DIAG is at  
logic LOW.  
Start-up/shutdown; when the product is internally muted  
Thermal protection pre-warning:  
When the supply voltage drops below 6 V (e.g. vehicle  
engine start), the circuit is immediately muted to prevent  
audible ‘clicks’ that may be produced in the electronic  
circuitry preceding the power amplifier.  
– If the junction temperature rises above 145 °C but is  
below the thermal protection temperature of 150 °C,  
the diagnostic output indicates that the thermal  
protection condition is about to become active. This  
pre-warning can be used by another device to reduce  
the amplitude of the input signal which would reduce  
the power dissipation. The thermal protection  
The voltage across the SE electrolytic capacitor  
connected to pin 16 is kept at 0.5 VP by a voltage buffer  
(see Fig.1). The capacitor value has an important  
influence on the output power in SE mode, especially at  
low frequency signals; a high value is recommended to  
minimize power dissipation at low frequencies.  
pre-warning is indicated by a logic LOW at pin DIAG.  
2004 Jan 27  
5
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
Heatsink design  
There are two parameters that determine the size of the  
heatsink. The first is the rating of the virtual junction  
temperature and the second is the ambient temperature at  
which the amplifier must still deliver its full power in the  
BTL mode.  
MHC601  
handbook, halfpage  
V
OUT1;  
V
OUT2  
Example:  
With a conventional BTL amplifier, the maximum power  
dissipation for a typical signal, such as music (at each  
amplifier) will be approximately two times 15 W. At a virtual  
junction temperature of 150 °C and a maximum ambient  
temperature of 65 °C, Rth(vj-c) = 1.8 K/W and  
0
V
DIAG  
Rth(c-h) = 0.2 K/W. For a conventional BTL amplifier the  
thermal resistance of the heatsink should be:  
150 65  
2 × 15  
1.8 0.2 = 0.83 K/W  
----------------------  
0
t
Compared to a conventional BTL amplifier, the  
TDA1565TH has a higher efficiency. The thermal  
resistance of the heatsink should be:  
150 65  
2 × 10  
1.8 0.2 = 2.25 K/W (see Fig.6).  
----------------------  
Fig.4 Clip detection waveforms.  
short-circuit  
removed  
output pins  
handbook, halfpage  
short-circuit  
(to ground)  
loudspeaker  
short-circuit  
I
OUT1;  
I
OUT2  
Imax  
virtual junction  
channel 1 channel 2  
handbook, halfpage  
t
3.0 K/W  
3.0 K/W  
Imax  
0.3 K/W  
V
DIAG  
case  
MHC586  
0
t
500  
ms  
500  
ms  
500  
ms  
500  
ms  
500  
ms  
10 µs 10 µs 10 µs  
10 µs 10 µs  
MHC595  
Fig.5 Short-circuit protection waveforms.  
Fig.6 Equivalent thermal resistance network.  
2004 Jan 27  
6
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VP  
PARAMETER  
CONDITIONS  
operating  
MIN.  
MAX.  
18  
UNIT  
supply voltage  
V
non operating  
30  
V
load dump; tr > 2.5 ms  
45  
V
VP(sc)  
Vrp  
short-circuit safe voltage  
reverse polarity voltage  
repetitive peak output current  
total power dissipation  
16  
V
6
V
IORM  
Ptot  
8
A
60  
W
°C  
°C  
°C  
Tstg  
Tvj  
storage temperature  
55  
+150  
150  
+85  
virtual junction temperature  
operating ambient temperature  
Tamb  
40  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-c)  
Rth(j-a)  
thermal resistance from junction to case  
thermal resistance from junction to ambient  
see Fig.6  
in free air  
1.8  
40  
K/W  
K/W  
2004 Jan 27  
7
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
DC CHARACTERISTICS  
VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.  
SYMBOL  
Supplies  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VP  
supply voltage  
note 1  
6.0  
14.4  
18.0  
V
Iq(tot)  
Istb  
quiescent current  
standby current  
RL = ∞  
95  
1
150  
50  
mA  
µA  
V
VCSE  
average voltage of SE  
7.1  
electrolytic capacitor at pin 16  
VO  
DC output offset voltage  
on state  
100  
100  
mV  
mV  
mute state  
Mode select switch (see Fig.3)  
VMODE  
voltage at mode select pin  
standby condition  
mute condition  
on condition  
0
2
4
1
V
3
V
5
VP  
40  
V
IMODE  
mode select input current  
VMODE = 5 V  
25  
µA  
Diagnostic  
VDIAG  
voltage at diagnostic output pin protection/temp  
pre-warning/clip detection  
VDIAG < 0.5 V  
0.5  
V
IDIAG  
diagnostic sink current  
2
mA  
Protection  
Tpre  
pre-warning temperature  
BTL disable temperature  
145  
150  
°C  
°C  
Tdis(BTL)  
note 2  
Notes  
1. The circuit is DC-biased at VP = 6 to 18 V and AC-operating at VP = 8 to 18 V.  
2. If the junction temperature exceeds 150 °C, the output power is limited to 10 W per channel.  
2004 Jan 27  
8
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
AC CHARACTERISTICS  
VP = 14.4 V; RL = 2 ; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.  
SYMBOL  
PARAMETER  
output power  
CONDITIONS  
MIN.  
25  
TYP.  
MAX. UNIT  
Po  
RL = 2 ; THD = 0.5 %  
RL = 2 ; THD = 10 %  
RL = 2 ; EIAJ  
31  
40  
60  
26  
34  
0.1  
W
W
W
W
W
%
W
Hz  
37  
VP = 13.2 V; THD = 0.5 %  
VP = 13.2 V; THD = 10 %  
Po = 1 W; note 1  
THD  
P
total harmonic distortion  
power dissipation  
see Figs 10 and 11  
Bp  
power bandwidth  
THD = 0.5 %; Po = 1 dB  
20 to  
with respect to 25 W  
15000  
fro(l)  
low frequency roll-off  
1 dB; note 2  
1 dB  
25  
Hz  
fro(h)  
Gv  
high frequency roll-off  
130  
25  
kHz  
dB  
closed-loop voltage gain  
supply voltage ripple rejection  
Po = 1 W; (see Fig.16)  
26  
27  
SVRR  
Rs = 0 ; Vripple = 2 V(p-p);  
(see Fig.17)  
on/mute  
50  
65  
90  
80  
120  
1
dB  
dB  
dB  
kΩ  
%
standby  
CMRR  
Zi  
common mode rejection ratio  
differential input impedance  
mismatch in input impedance  
SE to BTL switch voltage level  
f = 1 kHz; Rs = 0 Ω  
90  
150  
Zi  
VSE-BTL  
Vout  
note 3  
3
V
output voltage mute (RMS value) Vi = 1 V (RMS)  
95  
95  
100  
90  
70  
150  
150  
µV  
µV  
µV  
µV  
dB  
dB  
Vn(o)  
noise output voltage  
on; Rs = 0 ; note 4  
on; Rs = 10 k; note 4  
mute; note 5  
150  
αcs  
channel separation  
channel unbalance  
Rs = 0 ; Po = 25 W  
50  
Gv  
1
Notes  
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz (see Figures 20 and 21).  
2. Frequency response externally fixed (input capacitors determine the low frequency roll-off).  
3. The SE to BTL switch voltage level depends on the value of VP.  
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.  
5. Noise output voltage is independent of the source resistance (Rs).  
2004 Jan 27  
9
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
TEST AND APPLICATION INFORMATION  
V
220 nF  
2200 µF  
P
V
V
P1  
P2  
11  
20  
TDA1565TH  
100 nF  
3.9  
OUT2−  
7
8
0.5R  
s
IN213  
+
100 nF  
220 nF  
2 Ω  
3.9 Ω  
+
OUT2+  
0.5R  
s
IN2+ 14  
220 nF  
60  
60  
kΩ  
kΩ  
V
ref  
25 kΩ  
16  
CIN 19  
CSE  
2200 µF  
10 µF  
60  
kΩ  
60  
kΩ  
0.5R  
0.5R  
s
IN118  
+
3
4
OUT1−  
220 nF  
3.9 Ω  
2 Ω  
OUT1+  
s
IN1+ 17  
100 nF  
100 nF  
3.9 Ω  
+
220 nF  
CLIP AND  
DIAGNOSTIC  
STANDBY  
LOGIC  
signal ground  
power ground  
2
15  
6
5
MODE  
DIAG  
GND2 GND1  
V
MODE  
R
pu  
V
logic  
10 kΩ  
MHC603  
Connect Boucherot (IEC-60268) filter to pin 4 and pin 7 using the shortest possible connection.  
Rs = Source resistance.  
Fig.7 Application diagram.  
2004 Jan 27  
10  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
DIAG  
IN2  
AGND  
220 nF  
1000 µF  
IN1  
22 µF  
10 µF  
22 µF  
on  
2200 µF  
TDA1564TH/65TH  
off  
V
GND  
Out1  
Out2  
P
MHC587  
a. Top silk screen (top view).  
b. Top copper track (top view).  
Fig.8 PCB layout (component side) for the application shown in Fig.7.  
11  
2004 Jan 27  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
2.7  
kΩ  
220 nF  
220 nF  
51 kΩ  
3E9  
3E9  
220 nF  
100 nF  
100 nF  
150 kΩ  
100 nF 3E9  
3E9 100 nF  
MHC588  
a. Bottom silk screen (top view; legend reversed).  
b. Bottom copper track (top view).  
Fig.9 PCB layout (soldering side) for the application shown in Fig.7.  
2004 Jan 27  
12  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MHC589  
MHC590  
50  
40  
handbook, halfpage  
handbook, halfpage  
P
(W)  
P
(W)  
(1)  
40  
30  
20  
10  
(1)  
(2)  
(2)  
30  
20  
10  
0
0
0
0
10  
20  
30  
2
4
6
8
10  
P
(W)  
o
P
(W)  
o
Input signal 1 kHz, sinusoidal; VP = 14.4 V; RL = 2 .  
(1) For a conventional BTL amplifier.  
(2) For TDA1565TH.  
Input signal IEC 268 filtered pink noise; VP = 14.4 V; RL = 2 .  
(1) For a conventional BTL amplifier.  
(2) For TDA1565TH.  
Fig.10 Power dissipation as a function of output  
power; sine wave driven.  
Fig.11 Power dissipation as a function of output  
power; pink noise through IEC-60268 filter.  
2.2 µF  
2.2 µF  
470 nF  
430 Ω  
330 Ω  
91  
nF  
68  
nF  
3.3  
kΩ  
3.3  
kΩ  
10  
kΩ  
input  
output  
MGC428  
Fig.12 IEC-60268 filter.  
2004 Jan 27  
13  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
V
220 nF  
2200 µF  
P
V
V
P2  
P1  
20  
11  
TDA1565TH  
100 nF  
3.9 Ω  
OUT2−  
7
8
IN213  
220 nF  
+
100 nF  
2 Ω  
3.9 Ω  
+
OUT2+  
IN2+ 14  
220 nF  
60  
60  
kΩ  
kΩ  
V
ref  
25 kΩ  
16  
CIN 19  
CSE  
2200 µF  
10 µF  
IEC-60268  
FILTER  
60  
kΩ  
60  
kΩ  
IN118  
220 nF  
+
3
4
OUT1−  
pink  
noise  
3.9 Ω  
2 Ω  
IN1+ 17  
220 nF  
100 nF  
100 nF  
3.9 Ω  
+
OUT1+  
INTERFACE  
signal ground  
power ground  
MODE  
2
DIAG  
15  
6
5
MODE  
DIAG GND2 GND1  
R
V
pu  
MODE  
V
logic  
MHC604  
Fig.13 Test and application diagram for dissipation measurements with a simulated music signal (pink noise).  
2004 Jan 27  
14  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MHC599  
(3)  
MHC598  
200  
150  
handbook, halfpage  
handbook, halfpage  
I
P
(mA)  
I
P
(mA)  
150  
100  
100  
50  
(2)  
50  
(1)  
0
0
0
1
2
3
4
5
0
8
16  
24  
V
(V)  
V
(V)  
P
MODE  
VIN = 5 mV; VP = 14.4 V.  
(1) Standby.  
(2) Mute.  
VMODE = 5 V; RL = .  
(3) Operating.  
Fig.14 Quiescent current as a function of VP.  
Fig.15 IP as a function of VMODE.  
MHC597  
MHC591  
28  
0
handbook, halfpage  
handbook, halfpage  
G
v
SVRR  
(dB)  
(dB)  
26  
20  
40  
60  
24  
22  
20  
80  
2
3
4
5
6
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
f (Hz)  
f (Hz)  
VIN = 100 mV.  
(Vripple = 2 V (p-p).  
Fig.16 Gain as a function of frequency.  
Fig.17 SVRR as a function of frequency.  
2004 Jan 27  
15  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MHC592  
MHC596  
10  
0.8  
handbook, halfpage  
handbook, halfpage  
α
P
cs  
o
(W)  
0.6  
(dB)  
30  
(1)  
50  
0.4  
0.2  
(2)  
(1)  
(2)  
70  
90  
0
0
2
3
4
5
10  
10  
10  
10  
10  
8
16  
24  
V
(V)  
P
f (Hz)  
(1) Po = 1 W.  
(2) Po = 10 W.  
VIN = 50 mV.  
(1) Low supply mute.  
(2) Load dump.  
Fig.18 Channel separation as a function of  
frequency.  
Fig.19 AC operation as a function of VP.  
2004 Jan 27  
16  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MHC594  
2
10  
THD  
+
noise  
(%)  
10  
1
(1)  
(2)  
(3)  
1  
10  
2  
10  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
P
(W)  
o
RL = 2 .  
(1) 10 kHz.  
(2) 1 kHz.  
(3) 100 Hz.  
Fig.20 THD + noise as a function of Po.  
2004 Jan 27  
17  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MHC593  
10  
THD  
+
noise  
(%)  
(1)  
1
(2)  
1  
10  
2  
10  
2
3
4
5
10  
10  
10  
10  
10  
f (Hz)  
RL = 2 .  
(1) Po = 10 W.  
(2) Po = 1 W.  
Fig.21 THD + noise as a function of frequency.  
2004 Jan 27  
18  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
MBH691  
V
P
V
load  
0
V  
P
V
P
V
master  
1/2 V  
P
0
V
P
V
slave  
1/2 V  
P
0
0
1
2
t (ms)  
3
Also see Fig.7.  
Vload = (VOUT2+)(VOUT2) or (VOUT1+)(VOUT1).  
Vmaster = VOUT2+ or VOUT1−  
Vslave = VOUT2or VOUT1+  
.
.
Fig.22 Output waveforms.  
2004 Jan 27  
19  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
Application notes  
ADVANTAGES OF HIGH EFFICIENCY  
1. Power conversion improvement (power supply): The  
fact that the reduction of power dissipation is directly  
related to a reduction of supply current is often  
V
= 14.4 V  
handbook, halfpage  
P
Power  
dissipation  
reduction of 40%  
Supply  
current  
at P = 3.2 W  
o
neglected. One advantage is voltage is dropped over  
the whole supply chain. Another advantage is reduced  
stress for the coil in the supply line. Even the adapter  
or supply circuit is cooler due to the reduced  
reduction of  
32%  
dissipation of heat in the whole chain because more  
supply current will be converted into output power.  
Same junction  
temperature  
Same heatsink  
size  
choice  
2. Power dissipation reduction: This is the best known  
advantage of high efficiency amplifiers.  
3. Heatsink size reduction. The size of heatsink for a  
conventional amplifier can be reduced by  
Heatsink  
size  
reduction of  
50%  
Heatsink  
temperature  
reduction of  
40%  
approximately 50 % at VP = 14.4 V when the  
TDA1565TH is used. In this case, the maximum  
heatsink temperature remains the same.  
MHC610  
4. Heatsink temperature reduction: The power  
dissipation and the thermal resistance of the heatsink  
determine the rise in heatsink temperature.  
Fig.23 Heatsink design.  
If the same sized heatsink of a conventional amplifier is  
used, the maximum heatsink temperature and the  
maximum junction temperature both decrease, which  
extends the life of the semiconductor device; the maximum  
power dissipation for music, or similar input signals  
decreases by 40 %.  
ADVANTAGE OF THE CONCEPT USED BY TDA1565TH  
Because the TDA1565TH uses a single-ended capacitor  
to create a non-dissipating half supply voltage, it is highly  
efficient under all conditions. Other design concepts rely  
on the fact that both input signals have the same amplitude  
and phase. Using a SE capacitor prevents any adverse  
affects on efficiency that could result from any form of  
processing that may have been applied to the input  
signals, such as amplitude difference, phase shift or  
delays between both input signals, or other DSP  
processing.  
It is clear that the use of the TDA1565TH saves a  
significant amount of energy. The maximum supply current  
decreases by approximately 32 %, which reduces the  
power dissipation in the amplifier as well as in the whole  
supply chain. The TDA1565TH allows the size of the  
heatsink to be reduced by approximately 50 %, or the  
temperature of the heatsink to be reduced by 40 % if the  
size of the heatsink is unchanged.  
2004 Jan 27  
20  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
INTERNAL PIN CONFIGURATIONS  
PIN  
NAME  
MODE  
EQUIVALENT CIRCUIT  
2
2
MHC607  
3, 8  
OUT1+, OUT2−  
V
V
P1, P2  
3, 8  
16  
MHC608  
4, 7  
OUT1+, OUT2−  
V
V
P1, P2  
4, 7  
16  
MHC609  
15  
DIAG  
V
P2  
15  
MGW264  
2004 Jan 27  
21  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
PIN  
16  
NAME  
EQUIVALENT CIRCUIT  
CSE  
V
P2  
16  
MHC606  
17, 18, IN1+, IN1−  
13, 14, IN2+, IN2−  
V
V
P1, P2  
19  
CIN  
V
V
P1, P2  
13, 14, 17, 18  
19  
MHC605  
2004 Jan 27  
22  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
PACKAGE OUTLINE  
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height  
SOT418-3  
E
A
D
x
X
c
y
E
H
2
v
M
A
E
D
1
D
2
10  
1
pin 1 index  
Q
A
A
2
(A )  
3
E
1
A
4
θ
L
p
detail X  
20  
11  
w
M
Z
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
max.  
(1)  
(2)  
(2)  
A
A
A
b
c
D
D
D
E
E
1
E
e
H
E
L
p
Q
v
w
x
y
Z
θ
UNIT  
2
3
4
p
1
2
2
8°  
0°  
+0.08 0.53 0.32  
0.04 0.40 0.23  
16.0 13.0 1.1 11.1 6.2  
15.8 12.6 0.9 10.9 5.8  
2.9  
2.5  
14.5 1.1  
13.9 0.8  
1.7  
1.5  
2.5  
2.0  
3.5  
3.2  
mm  
1.27  
3.5  
0.35  
0.25 0.25 0.03 0.07  
Notes  
1. Limits per individual lead.  
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
02-02-12  
03-07-23  
SOT418-3  
2004 Jan 27  
23  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
SOLDERING  
If wave soldering is used the following conditions must be  
observed for optimal results:  
Introduction to soldering surface mount packages  
Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by a  
smooth laminar wave.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “Data Handbook IC26; Integrated Circuit Packages”  
(document order number 9398 652 90011).  
For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering can still be used for  
certain surface mount ICs, but it is not suitable for fine pitch  
SMDs. In these situations reflow soldering is  
recommended.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
Reflow soldering  
The footprint must incorporate solder thieves at the  
downstream end.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
Driven by legislation and environmental forces the  
For packages with leads on four sides, the footprint must  
be placed at a 45° angle to the transport direction of the  
printed-circuit board. The footprint must incorporate  
solder thieves downstream and at the side corners.  
worldwide use of lead-free solder pastes is increasing.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Several methods exist for reflowing; for example,  
convection or convection/infrared heating in a conveyor  
type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending  
on heating method.  
Typical dwell time of the leads in the wave ranges from  
3 to 4 seconds at 250 °C or 265 °C, depending on solder  
material applied, SnPb or Pb-free respectively.  
Typical reflow peak temperatures range from  
215 to 270 °C depending on solder paste material. The  
top-surface temperature of the packages should  
preferably be kept:  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
below 225 °C (SnPb process) or below 245 °C (Pb-free  
process)  
Manual soldering  
– for all BGA, HTSSON-T and SSOP-T packages  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
– for packages with a thickness 2.5 mm  
– for packages with a thickness < 2.5 mm and a  
volume 350 mm3 so called thick/large packages.  
below 240 °C (SnPb process) or below 260 °C (Pb-free  
process) for packages with a thickness < 2.5 mm and a  
volume < 350 mm3 so called small/thin packages.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
Moisture sensitivity precautions, as indicated on packing,  
must be respected at all times.  
Wave soldering  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit boards  
with a high component density, as solder bridging and  
non-wetting can present major problems.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
2004 Jan 27  
24  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE(1)  
WAVE  
not suitable  
REFLOW(2)  
BGA, HTSSON..T(3), LBGA, LFBGA, SQFP, SSOP..T(3), TFBGA,  
USON, VFBGA  
suitable  
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON,  
HTQFP, HTSSOP, HVQFN, HVSON, SMS  
PLCC(5), SO, SOJ  
not suitable(4)  
suitable  
suitable  
suitable  
LQFP, QFP, TQFP  
not recommended(5)(6) suitable  
SSOP, TSSOP, VSO, VSSOP  
CWQCCN..L(8), PMFP(9), WQCCN..L(8)  
not recommended(7)  
suitable  
not suitable  
not suitable  
Notes  
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy  
from your Philips Semiconductors sales office.  
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account  
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature  
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature  
must be kept as low as possible.  
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder  
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,  
the solder might be deposited on the heatsink surface.  
5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not  
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than  
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted  
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar  
soldering process. The appropriate soldering profile can be provided on request.  
9. Hot bar or manual soldering is suitable for PMFP packages.  
2004 Jan 27  
25  
Philips Semiconductors  
Product specification  
High efficiency 2 × 40 W / 2 Ω  
stereo car radio power amplifier  
TDA1565TH  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Jan 27  
26  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R32/02/pp27  
Date of release: 2004 Jan 27  
Document order number: 9397 750 12581  

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