935312895147 [NXP]
Telecom Circuit;
| 型号： | 935312895147 |
| 厂家： | 
NXP |
| 描述： | Telecom Circuit 电信 电信集成电路 |
| 文件： | 总28页 (文件大小：1255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG30301B
Rev. 0, 10/2016
NXP Semiconductors
Technical Data
Driver or Pre--driver Amplifier
for Doherty Power Amplifiers
MMG30301BT1
The MMG30301B is a 1 W high gain amplifier designed as a driver or pre--driver
for Doherty power amplifiers in wireless infrastructure equipment operating in
the 900 to 4300 MHz frequency range. Because of its versatile design, the
device may also be used in a variety of general purpose amplifier applications,
including those at frequencies from 900 to 4300 MHz.
900–4300 MHz, 16.2 dB @ 2140 MHz
30.1 dBm
BTS DRIVER AMPLIFIER
Features
•
•
•
•
•
•
P1dB: 30.1 dBm @ 2140 MHz
Gain: 16.2 dB @ 2140 MHz
Designed as a Doherty PA driver or pre--driver
5 V single supply, 258 mA current
SOT--89 package
SOT--89
50 ohm operation with minimal external matching
Table 1. Load Pull Performance (1)
Characteristic
Symbol
MAG
900 MHz
1900 MHz
2140 MHz
16.9
2600 MHz
15.2
3350 MHz
13.3
Unit
dB
Maximum Available Gain
24.1
17.9
(2)
(2)
P
@ 1dB Compression
P1dB
30.0
30.0
30.1
30.4
30.1
dBm
out
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
V
Supply Voltage
V
6
CC
CC
Supply Current
I
480
23
mA
dBm
°C
RF Input Power
P
in
Storage Temperature Range
Junction Temperature
T
stg
–65 to +150
175
T
J
°C
Table 3. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
17
°C/W
JC
Case Temperature 91°C, 5 Vdc, 280 mA, no RF applied
1. V = 5 Vdc, T = 25°C, CW.
CC
A
2. Maximum allowable current not to exceed 480 mA.
3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
© 2016 NXP B.V.
Table 4. Electrical Characteristics (V = 5 Vdc, 2140 MHz, T = 25°C, 50 ohm system, in NXP Application Circuit)
CC
A
Characteristic
Symbol
Min
15.8
—
Typ
16.2
30.1
–11.8
–13.8
3.7
Max
—
Unit
dB
Small--Signal Gain (S21)
G
p
Power Output @ 1dB Compression
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
P1dB
IRL
—
dBm
dB
—
—
ORL
NF
—
—
dB
—
—
dB
Supply Current
I
240
—
258
5
280
—
mA
V
CC
Supply Voltage
V
CC
Table 5. Functional Pin Description
Pin
Number
Pin Function
2
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JESD 22--A114)
Charge Device Model (per JESD 22--C101)
C3
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1
260
°C
Table 8. Ordering Information
Device
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
MMG30301BT1
SOT--89
MMG30301BT1
RF Device Data
NXP Semiconductors
2
32
31
30
29
28
27
26
Table 9. ACPR versus Frequency
(LTE 10 MHz, ACPR = –48 dBc)
ACPR = –48 dBc
Gain
P
I
CC
f
out
(dBm)
20.5
19.2
19.3
20.7
(dB)
16.5
14.4
12.7
10.7
(mA)
300
278
262
265
(MHz)
2140
2600
3500
4150
2500
f, FREQUENCY (MHz)
500
1000
1500
2000
3000
3500
Note: Maximum allowable current not to exceed 480 mA.
Figure 2. Maximum Average Output Power
versus Frequency
MMG30301BT1
RF Device Data
NXP Semiconductors
3
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
R1
C1
Z1
L2
Z2
C6
C5
L1
C2
C4
C3
V
DD
Z1
Z2
0.19″ × 0.02″ Microstrip
0.22″ × 0.02″ Microstrip
Figure 3. MMG30301BT1 Test Circuit Schematic
Table 10. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.5 pF Chip Capacitor
Part Number
GJM0225C1E1R5WB
GJM0225C1ER50WB
GRM188B11E103MA
GRM1555C81E105ME
GJM0225C1ER70WB
GJM0225C1E1R1WB
0603CS-10NX
Manufacturer
Murata
C1
C2
C3
C4
C5
C6
L1
0.5 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
0.7 pF Chip Capacitor
1.1 pF Chip Capacitor
10 nH Chip Inductor
1 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Coilcraft
Panasonic
MTL
L2
0402CS-1N0X
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
RF Device Data
NXP Semiconductors
4
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
RF
OUT
IN
C4
C3
C1
R1
C6
C2
L1 L2 C5
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 4. MMG30301BT1 Test Circuit Component Layout
Table 10. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.5 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
C2
C3
C4
C5
C6
L1
GJM0225C1E1R5WB
GJM0225C1ER50WB
GRM188B11E103MA
GRM1555C81E105ME
GJM0225C1ER70WB
GJM0225C1E1R1WB
0603CS-10NX
0.5 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
0.7 pF Chip Capacitor
1.1 pF Chip Capacitor
10 nH Chip Inductor
1 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Coilcraft
Panasonic
MTL
L2
0402CS-1N0X
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
RF Device Data
NXP Semiconductors
5
50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, 5 VOLT OPERATION
–3
19
18
17
16
–6
25°C
–40°C
85°C
–9
–12
–15
25°C
85°C
15
14
–18
–21
–40°C
V
= 5 Vdc
CC
V
= 5 Vdc
CC
2100
2120
2140
2160
2180
2200
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Small--Signal Gain (S21) versus
Frequency and Temperature
Figure 6. Input Return Loss (S11) versus
Frequency and Temperature
–9
–12
–15
–18
–21
–40°C
25°C
85°C
V
= 5 Vdc
CC
–24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 7. Output Return Loss (S22) versus
Frequency and Temperature
MMG30301BT1
RF Device Data
NXP Semiconductors
6
50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, 5 VOLT OPERATION
8
7
6
5
4
3
18
V
= 5 Vdc, f = 2140 MHz, CW
CC
–40°C
17
16
15
25°C
85°C
14
13
V
= 5 Vdc
CC
2
1500
1700
1900
2100
2300
2500
20
22
24
26
28
30
32
f, FREQUENCY (MHz)
P
, OUTPUT POWER (dBm)
out
Figure 8. Noise Figure versus Frequency
Figure 9. Power Gain versus Output Power
and Temperature
320
–44
–47
–50
–53
–56
–59
–62
–65
V
= 5 Vdc, f = 2140 MHz
CC
V
= 5 Vdc, f = 2140 MHz
CC
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Single--Carrier W--CDMA 3GPP TM1 Unclipped
300
280
260
240
220
–40°C
25°C
85°C
85°C
25°C
–40°C
10
12
14
P , OUTPUT POWER (dBm)
out
16
18
20
22
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
out
Figure 11. Single--Carrier W--CDMA Adjacent Channel
Power Ratio versus Output Power and Temperature
Figure 10. Collector Current versus
Output Power and Temperature
MMG30301BT1
RF Device Data
NXP Semiconductors
7
50 OHM APPLICATION CIRCUIT: 1805–1880 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
R1
C1
Z1
Z2
Z3
C6
C5
L1
C2
C4
C3
V
DD
Z1
Z2
Z3
0.115″ × 0.02″ Microstrip
0.18″ × 0.02″ Microstrip
0.2″ × 0.02″ Microstrip
Figure 12. MMG30301BT1 Test Circuit Schematic
Table 11. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.3 pF Chip Capacitor
Part Number
GJM0225C1E1R3WB
GJM0225C1E3R9WB
GCM1555R71E103KA37
Manufacturer
C1
C2
C3
C4
C5
C6
L1
Murata
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
3.9 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
3.3 pF Chip Capacitor
100 pF Chip Capacitor
10 nH Chip Inductor
GRM1555R61A104KA01D
GJM0225C1E3R3WB
GRM1555C1H101JA01
0603CS-10NX
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
RF Device Data
NXP Semiconductors
8
50 OHM APPLICATION CIRCUIT: 1805–1880 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
OUT
RF
IN
C4
C3
C1
R1
C6
C2
L1
C5
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 13. MMG30301BT1 Test Circuit Component Layout
Table 11. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.3 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
C2
C3
C4
C5
C6
L1
GJM0225C1E1R3WB
GJM0225C1E3R9WB
GCM1555R71E103KA37
3.9 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
3.3 pF Chip Capacitor
100 pF Chip Capacitor
10 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
GRM1555R61A104KA01D
GJM0225C1E3R3WB
GRM1555C1H101JA01
0603CS-10NX
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
RF Device Data
NXP Semiconductors
9
50 OHM TYPICAL CHARACTERISTICS: 1805–1880 MHz, 5 VOLT OPERATION
20
19
–5
–10
–15
18
17
16
15
–20
–25
–30
V
= 5 Vdc
CC
V
= 5 Vdc
CC
–35
1750
1750
1790
1830
1870
1910
1950
1790
1830
1870
1910
1950
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 14. Small--Signal Gain (S21)
versus Frequency
Figure 15. Input Return Loss (S11)
versus Frequency
–6
–8
20
19
18
17
16
15
14
–10
–12
–14
–16
–18
V
= 5 Vdc
V
= 5 Vdc, f = 1840 MHz, CW
CC
CC
26
, OUTPUT POWER (dBm)
20
22
24
28
30
32
1750
1790
1830
1870
1910
1950
P
f, FREQUENCY (MHz)
out
Note: Maximum allowable current not to exceed 240 mA
Figure 16. Output Return Loss (S22)
versus Frequency
Figure 17. Power Gain versus Output Power
380
360
340
–30
–34
–38
–42
–46
–50
–54
320
300
280
Single--Carrier W--CDMA @ f = 1840 MHz
LTE 10 MHz @ f = 1840 MHz
LTE 10 MHz @ f = 1840 MHz
260
240
–58
–62
Single--Carrier W--CDMA @ f = 1840 MHz
12
14
16
P
18
20
22
24
26
12
14
16
P
18
20
22
24
26
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
out
out
Figure 18. Collector Current versus
Output Power
Figure 19. Adjacent Channel Power Ratio versus
Output Power
MMG30301BT1
RF Device Data
NXP Semiconductors
10
50 OHM APPLICATION CIRCUIT: 1880–1920 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
R1
C1
Z1
Z2
Z3
C6
C5
L1
C2
C4
C3
V
DD
Z1
Z2
Z3
0.105″ × 0.02″ Microstrip
0.164″ × 0.02″ Microstrip
0.14″ × 0.02″ Microstrip
Figure 20. MMG30301BT1 Test Circuit Schematic
Table 12. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.2 pF Chip Capacitor
Part Number
GJM0225C1E1R2WB
GJM0225C1E3R3WB
Manufacturer
C1
C2
C3
C4
C5
C6
L1
Murata
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
3.3 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
2.7 pF Chip Capacitor
100 pF Chip Capacitor
10 nH Chip Inductor
GCM1555R71E103KA37
GRM1555R61A104KA01D
GJM0225C1E2R7WB
GRM1555C1H101JA01
0603CS-10NX
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
11
RF Device Data
NXP Semiconductors
50 OHM APPLICATION CIRCUIT: 1880–1920 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
OUT
RF
IN
C4
C3
C1
R1
C6
C2
L1
C5
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 21. MMG30301BT1 Test Circuit Component Layout
Table 12. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
1.2 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
C2
C3
C4
C5
C6
L1
GJM0225C1E1R2WB
GJM0225C1E3R3WB
GCM1555R71E103KA37
3.3 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
2.7 pF Chip Capacitor
100 pF Chip Capacitor
10 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
GRM1555R61A104KA01D
GJM0225C1E2R7WB
GRM1555C1H101JA01
0603CS-10NX
R1
PCB
0 Ω, 1 A Chip Resistor
ERJ2GE0R00X
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
RF Device Data
NXP Semiconductors
12
50 OHM TYPICAL CHARACTERISTICS: 1880–1920 MHz, 5 VOLT OPERATION
19
18
0
–5
–10
–15
–20
17
16
15
14
V
= 5 Vdc
V
= 5 Vdc
CC
CC
–25
1750
1750
1800
1850
1900
1950
2000
2050
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 22. Small--Signal Gain (S21)
versus Frequency
Figure 23. Input Return Loss (S11)
versus Frequency
–5
–10
–15
–20
–25
20
19
18
17
16
15
14
–30
–35
–40
V
= 5 Vdc, f = 1900 MHz, CW
CC
V
= 5 Vdc
CC
20
22
24
26
28
30
32
1750
1800
1850
1900
1950
2000
2050
P
, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
out
Note: Maximum allowable current not to exceed 480 mA.
Figure 24. Output Return Loss (S22)
versus Frequency
Figure 25. Power Gain versus Output Power
380
–30
V
= 5 Vdc, f = 1900 MHz, LTE 10 MHz
V
= 5 Vdc, @ f = 1900 MHz, LTE 10 MHz
CC
CC
–34
–38
–42
–46
–50
360
340
320
300
280
260
240
–54
–58
–62
12
14
16
18
P , OUTPUT POWER (dBm)
out
20
22
24
26
12
14
16
18
20
22
24
26
P
, OUTPUT POWER (dBm)
out
Figure 26. Collector Current versus
Output Power
Figure 27. Adjacent Channel Power Ratio versus
Output Power
MMG30301BT1
13
RF Device Data
NXP Semiconductors
50 OHM APPLICATION CIRCUIT: 2570–2620 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
C1
Z1
Z3
C2
Z2
C7
C6
L2
L1
C3
C4
C5
V
DD
Z1
Z2
Z3
0.115″ × 0.02″ Microstrip
0.26″ × 0.02″ Microstrip
0.12″ × 0.02″ Microstrip
Figure 28. MMG30301BT1 Test Circuit Schematic
Table 13. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitors
Part Number
GRM1555C1H101JA01
GRM1555C1H220GA01
GJM0225C1E3R3WB
GRM188B11E103MA19L
GRM1555C81E105ME15
GJM0225C1E2R7WB
LL1005-FHL1N0S
Manufacturer
C1, C7
C2
Murata
Murata
Murata
Murata
Murata
Murata
Toko
22 pF Chip Capacitor
3.3 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
2.7 pF Chip Capacitor
1 nH Chip Inductor
C3
C4
C5
C6
L1
L2
10 nH Chip Inductor
0603CS-10NX
Coilcraft
MTL
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
RF Device Data
NXP Semiconductors
14
50 OHM APPLICATION CIRCUIT: 2570–2620 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
RF
OUT
IN
C5
C4
C1
L1
C7
C2 C3
L2 C6
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 29. MMG30301BT1 Test Circuit Component Layout
Table 13. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitors
Part Number
Manufacturer
Murata
C1, C7
C2
GRM1555C1H101JA01
GRM1555C1H220GA01
GJM0225C1E3R3WB
GRM188B11E103MA19L
GRM1555C81E105ME15
GJM0225C1E2R7WB
LL1005-FHL1N0S
22 pF Chip Capacitor
3.3 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
2.7 pF Chip Capacitor
1 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Toko
C3
C4
C5
C6
L1
L2
10 nH Chip Inductor
0603CS-10NX
Coilcraft
MTL
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
15
RF Device Data
NXP Semiconductors
50 OHM TYPICAL CHARACTERISTICS: 2570–2620 MHz, 5 VOLT OPERATION
15
14
13
12
11
10
0
–3
–6
–9
–12
V
= 5 Vdc
V
= 5 Vdc
CC
CC
–15
2500
2500
2540
2580
2620
2660
2700
2540
2580
2620
2660
2700
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 30. Small--Signal Gain (S21)
versus Frequency
Figure 31. Input Return Loss (S11)
versus Frequency
0
–3
–6
16
15
14
13
12
–9
–12
–15
11
10
V
= 5 Vdc
CC
V
= 5, Vdc, f = 2600 MHz, CW
CC
2500
2550
2600
2650
2700
20
22
24
26
28
30
32
P
, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
out
Figure 33. Power Gain versus Output Power
Figure 32. Output Return Loss (S22)
versus Frequency
380
–30
–34
–38
–42
360
340
320
300
280
260
240
–46
–50
–54
–58
–62
V
= 5 Vdc, LTE 10 MHz @ f = 2600 MHz
V
= 5 Vdc, LTE 10 MHz @ f = 2600 MHz
CC
CC
12
14
16
18
, OUTPUT POWER (dBm)
out
20
22
24
26
12
14
16
P
18
20
22
24
26
, OUTPUT POWER (dBm)
P
out
Figure 34. Collector Current versus
Output Power
Figure 35. Adjacent Channel Power Ratio versus
Output Power
MMG30301BT1
RF Device Data
NXP Semiconductors
16
50 OHM APPLICATION CIRCUIT: 2620–2690 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
C1
Z1
Z3
C2
Z2
C7
C6
L2
L1
C3
C4
C5
V
DD
Z1
Z2
Z3
0.115″ × 0.02″ Microstrip
0.265″ × 0.02″ Microstrip
0.09″ × 0.02″ Microstrip
Figure 36. MMG30301BT1 Test Circuit Schematic
Table 14. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitors
Part Number
Manufacturer
C1, C7
C2
GRM1555C1H101JA01
GRM1555C1H220GA01
GJM0225C1E3R3WB
GRM188B11E103MA19L
GRM1555C81E105ME15
GJM0225C1E2R4WB
LL1005-FHL1N0S
Murata
Murata
Murata
Murata
Murata
Murata
Toko
22 pF Chip Capacitor
3.3 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
2.4 pF Chip Capacitor
1 nH Chip Inductor
C3
C4
C5
C6
L1
L2
10 nH Chip Inductor
0603CS-10NX
Coilcraft
MTL
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
17
RF Device Data
NXP Semiconductors
50 OHM APPLICATION CIRCUIT: 2620–2690 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
OUT
RF
IN
C5
C4
L1
C1
C2
C7
C3
L2 C6
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 37. MMG30301BT1 Test Circuit Component Layout
Table 14. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitors
Part Number
Manufacturer
Murata
C1, C7
C2
GRM1555C1H101JA01
GRM1555C1H220GA01
GJM0225C1E3R3WB
GRM188B11E103MA19L
GRM1555C81E105ME15
GJM0225C1E2R4WB
LL1005-FHL1N0S
22 pF Chip Capacitor
3.3 pF Chip Capacitor
0.01 μF Chip Capacitor
1 μF Chip Capacitor
2.4 pF Chip Capacitor
1 nH Chip Inductor
Murata
Murata
Murata
Murata
Murata
Toko
C3
C4
C5
C6
L1
L2
10 nH Chip Inductor
0603CS-10NX
Coilcraft
MTL
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
RF Device Data
NXP Semiconductors
18
50 OHM TYPICAL CHARACTERISTICS: 2620–2690 MHz, 5 VOLT OPERATION
16
15
0
–3
14
13
–6
–9
12
11
10
–12
–15
V
= 5 Vdc
V
= 5 Vdc
CC
CC
–18
2550
2550
2590
2630
2670
2710
2750
2590
2630
2670
2710
2750
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 38. Small--Signal Gain (S21)
versus Frequency
Figure 39. Input Return Loss (S11)
versus Frequency
0
–3
15
14
13
12
11
10
–6
–9
–12
–15
–18
V
= 5 Vdc, f = 2655 MHz, CW
CC
V
= 5 Vdc
CC
2550
2590
2630
2670
2710
2750
20
22
26
, OUTPUT POWER (dBm)
24
28
30
32
P
f, FREQUENCY (MHz)
out
Figure 41. Power Gain versus Output Power
Figure 40. Output Return Loss (S22)
versus Frequency
380
–30
–34
–38
–42
–46
–50
–54
360
340
320
300
280
Single--Carrier W--CDMA @ f = 2655 MHz
LTE 10 MHz @ f = 2655 MHz
LTE 10 MHz @ f = 2655 MHz
Single--Carrier W--CDMA
@ f = 2655 MHz
260
240
–58
–62
14
16
18
20
22
24
26
14
16
18
20
22
24
26
P
, OUTPUT POWER (dBm)
P
, OUTPUT POWER (dBm)
out
out
Figure 43. Adjacent Channel Power Ratio versus
Output Power
Figure 42. Collector Current versus
Output Power
MMG30301BT1
RF Device Data
NXP Semiconductors
19
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION
2
RF
RF
1
2
3
INPUT
OUTPUT
R1
C1
C5
C3
Z1
Z2
C7
C6
L1
C2
C4
V
DD
Z1
Z2
0.165″ × 0.02″ Microstrip
0.105″ × 0.02″ Microstrip
Figure 44. MMG30301BT1 Test Circuit Schematic
Table 15. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
0.3 pF Chip Capacitor
Part Number
Manufacturer
C1
GJM0225C1ER30WB
GJM0225C1ER80WB
GCM1555R71E103KA37
Murata
C2
0.8 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
1.5 pF Chip Capacitors
10 pF Chip Capacitor
6.8 nH Chip Inductor
0 Ω, 1 A Chip Resistor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
C3
C4
GRM1555R61A104KA01D
GJM0225C1E1R5WB
GRM1555C1H100GA01
0603CS-6N8X
C5, C6
C7
L1
R1
ERJ2GE0R00X
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
MMG30301BT1
RF Device Data
NXP Semiconductors
20
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION
M128499
V
CC
RF
RF
OUT
IN
C4
C3
R1
C7
C1 C2
L1 C5
C6
SOT--89--3E
Rev. 0
PCB actual size: 1.3″ × 1.46″.
Figure 45. MMG30301BT1 Test Circuit Component Layout
Table 15. MMG30301BT1 Test Circuit Component Designations and Values
Part
Description
0.3 pF Chip Capacitor
Part Number
Manufacturer
Murata
C1
GJM0225C1ER30WB
GJM0225C1ER80WB
GCM1555R71E103KA37
C2
0.8 pF Chip Capacitor
1000 pF Chip Capacitor
0.1 μF Chip Capacitor
1.5 pF Chip Capacitors
10 pF Chip Capacitor
6.8 nH Chip Inductor
0 Ω, 1 A Chip Resistor
Murata
Murata
Murata
Murata
Murata
Coilcraft
Panasonic
MTL
C3
C4
GRM1555R61A104KA01D
GJM0225C1E1R5WB
GRM1555C1H100GA01
0603CS-6N8X
C5, C6
C7
L1
R1
ERJ2GE0R00X
PCB
Rogers R04350B, 0.010″, ε = 3.66
M128499
r
(Test Circuit Component Designations and Values table repeated for reference.)
MMG30301BT1
21
RF Device Data
NXP Semiconductors
50 OHM TYPICAL CHARACTERISTICS: 3400–3600 MHz, 5 VOLT OPERATION
0
14
13
12
11
10
9
–5
–10
–15
–20
–25
8
V
= 5 Vdc
V
= 5 Vdc
CC
CC
7
–30
3300 3350 3400 3450
3500 3550 3600 3650 3700
3300 3350 3400 3450 3500
3550 3600 3650 3700
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 46. Small--Signal Gain (S21)
versus Frequency
Figure 47. Input Return Loss (S11)
versus Frequency
0
–3
14
13
12
–6
11
10
9
–9
–12
–15
–18
V
= 5 Vdc
V
= 5 Vdc, f = 3500 MHz, CW
CC
CC
8
3400
3300 3350
3450 3500 3550 3600 3650 3700
f, FREQUENCY (MHz)
18
20
22
24
26
28
30
32
P
, OUTPUT POWER (dBm)
out
Figure 48. Output Return Loss (S22)
versus Frequency
Figure 49. Power Gain versus Output Power
280
–30
–34
–38
–42
275
270
265
–46
–50
–54
260
255
250
245
–58
–62
V
= 5 Vdc, LTE 10 MHz @ f = 3500 MHz
V
= 5 Vdc, LTE 10 MHz @ f = 3500 MHz
CC
CC
240
12
14
16
P
18
, OUTPUT POWER (dBm)
out
20
22
24
26
12
14
16
P
18
20
22
24
26
, OUTPUT POWER (dBm)
out
Figure 51. Adjacent Channel Power Ratio versus
Output Power
Figure 50. Collector Current versus
Output Power
MMG30301BT1
RF Device Data
NXP Semiconductors
22
1.90
3.00
2X
45°
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 52. PCB Pad Layout for SOT--89A
M30301
AWLYWZ
Figure 53. Product Marking
MMG30301BT1
RF Device Data
NXP Semiconductors
23
PACKAGE DIMENSIONS
MMG30301BT1
RF Device Data
NXP Semiconductors
24
MMG30301BT1
RF Device Data
NXP Semiconductors
25
MMG30301BT1
RF Device Data
NXP Semiconductors
26
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
•
•
•
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local NXP Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2016
• Initial Release of Data Sheet
MMG30301BT1
RF Device Data
NXP Semiconductors
27
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E 2016 NXP B.V.
Document Number: MMG30301B
Rev. 0, 10/2016
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