935323765528 [NXP]
Narrow Band High Power Amplifier;
| 型号： | 935323765528 |
| 厂家： | 
NXP |
| 描述： | Narrow Band High Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总23页 (文件大小：801K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF2010N
Rev. 1, 04/2017
NXP Semiconductors
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MMRF2010N
MMRF2010GN
The MMRF2010N is a 2--stage RFIC designed for IFF transponder
applications operating from 1030 to 1090 MHz. These devices are suitable for
use in pulse applications such as IFF and secondary radar transponders.
Typical Wideband Performance: (52 Vdc, T = 25°C)
1030–1090 MHz, 250 W PEAK, 50 V
RF LDMOS INTEGRATED
POWER AMPLIFIERS
A
Frequency
(MHz)
P
(W)
G
2nd Stage Eff.
(%)
out
ps
(1)
Signal Type
(dB)
34.1
33.4
33.6
32.6
Pulse
250 Peak
1030
1090
1030
1090
61.0
61.9
61.5
62.9
(128 μsec, 10% Duty Cycle)
Pulse
250 Peak
(2 msec, 20% Duty Cycle)
TO--270WB--14
PLASTIC
MMRF2010N
Narrowband Performance: (50 Vdc, T = 25°C)
A
P
Frequency
(MHz)
G
(dB)
2nd Stage Eff.
(%)
out
ps
Signal Type
(W)
(2)
1090
Pulse
250 Peak
32.1
61.4
(128 μsec, 10% Duty Cycle)
TO--270WBG--14
PLASTIC
MMRF2010GN
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(1)
1090
Pulse
> 20:1 at all
0.316 W
Peak
(3 dB
52
No Device
Degradation
(2 msec, 20% Phase Angles
Duty Cycle)
Overdrive)
1. Measured in 1030–1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.
Features
•
•
•
•
•
•
Characterized over 1030–1090 MHz
On--chip input (50 ohm) and interstage matching
Single ended
Integrated ESD protection
Low thermal resistance
Integrated quiescent current temperature compensation with
enable/disable function (3)
Typical Applications
•
•
Driver PA for high power pulse applications
IFF and secondary radar
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
© 2015, 2017 NXP B.V.
V
1
2
DS1
GS2
V
V
3
GS1
N.C.
RF
RF
RF
14
13
RF /V
out DS2
4
5
in
in
in
V
V
DS1
6
7
RF
RF /V
out DS2
Stage 1
Stage 2
RF
8
in
in
RF /V
out DS2
N.C.
N.C.
9
10
11
12
Thermal Sense
RF Sense
Quiescent Current
GS1
GS2
(1)
out
Temperature Compensation
and Thermal Sense
V
Thermal Sense
RF Sense
(Top View)
out
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +100
–6, +10
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
50, +0
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–55 to 150
–55 to 225
25
T
C
°C
(2,3)
Operating Junction Temperature Range
Input Power
T
J
°C
P
dBm
in
Table 2. Thermal Characteristics
(3,4)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Z
θ
°C/W
JC
Pulse: Case Temperature 81°C, 250 W Peak, 128 μsec Pulse Width, 10% Duty
Cycle, 1090 MHz
Stage 1, 50 Vdc, I
Stage 2, 50 Vdc, I
= 80 mA
= 150 mA
1.1
0.15
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class 2, passes 2500 V
Class A, passes 150 V
Class II, passes 200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.nxp.com/RF/calculators.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 100 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 1 -- On Characteristics
Gate Threshold Voltage
V
V
1.3
6.0
1.8
7.0
2.3
8.0
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 52 μAdc)
DS
D
Fixture Gate Quiescent Voltage
(V = 50 Vdc, I = 80 mAdc, Measured in Functional Test)
GG(Q)
DD
DQ1
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 100 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
I
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 -- On Characteristics
Gate Threshold Voltage
V
V
1.3
2.2
—
1.8
2.7
2.3
3.2
—
Vdc
Vdc
Vdc
GS(th)
GG(Q)
DS(on)
(V = 10 Vdc, I = 528 μAdc)
DS
D
Fixture Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
DD
DQ2
Drain--Source On--Voltage
V
0.25
(V = 10 Vdc, I = 1.6 Adc)
GS
D
(1,2)
Functional Tests
(In NXP Test Fixture, 50 ohm system) V = 50 Vdc, I
= 80 mA, I
= 150 mA, P = 250 W Peak
DQ2 out
DD
DQ1
(25 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
G
30.5
57.0
32.1
61.4
34.0
—
dB
%
ps
D
2nd Stage Drain Efficiency
η
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) I
= 80 mA, I
= 150 mA
DQ2
DQ1
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
DD
1090
Pulse
(128 μsec,
10% Duty
Cycle)
> 10:1 at all Phase Angles
0.345 W Peak
(3 dB Overdrive)
50
No Device Degradation
Table 6. Ordering Information
Device
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
TO--270WB--14
TO--270WBG--14
MMRF2010NR1
MMRF2010GNR1
1. Part internally input matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1.20
V
I
I
= 50 Vdc
= 80 mA
= 150 mA
DD
DQ1
DQ2
1.15
1.10
I
DQ2
1.05
1.00
0.95
0.90
0.85
0.80
I
DQ1
–75
–50
–25
0
25
50
75
100
T , CASE TEMPERATURE (°C)
C
Slope
(mA/°C)
I
I
–0.000
+0.143
DQ1
DQ2
Note: Performance measured in reference circuit.
Figure 3. Normalized IDQ versus Case Temperature
9
10
V
= 50 Vdc
DD
Pulse Width = 128 μsec
10% Duty Cycle
8
10
I
D
= 6.52 Amps
7
8.30 Amps
10
9.36 Amps
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature -- Pulse
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
4
1030–1090 MHz REFERENCE CIRCUIT — 1.97″ x 2.76″ (5.0 cm x 7.0 cm)
Table 7. 1030–1090 MHz Performance (In NXP Reference Circuit, 50 ohm system) V = 52 Vdc, I
= 80 mA, I = 150 mA
DQ2
DD
DQ1
G
Frequency
(MHz)
2nd Stage Eff.
P
(W)
ps
out
Signal Type
(dB)
34.1
33.4
33.6
32.6
(%)
61.0
61.9
61.5
62.9
1030
1090
1030
1090
Pulse
250 Peak
250 Peak
(128 μsec, 10% Duty Cycle)
Pulse
(2 msec, 20% Duty Cycle)
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
5
1030–1090 MHz REFERENCE CIRCUIT — 1.97″ x 2.76″ (5.0 cm x 7.0 cm)
R1
R2
C25
V
DD1
C17
C19
C20
C18
C1
C11
C26
C13*
C14*
C21
C23
C8
C6
C24
Q1
C7
C9
C10
C12
C15*
C16*
C22
Rev. B
V
DD2
* Stacked components
Note: Component numbers C2, C3, C4, and C5 are not used.
Figure 5. MMRF2010N Reference Circuit Component Layout — 1030–1090 MHz
Table 8. MMRF2010N Reference Circuit Component Designations and Values — 1030–1090 MHz
Part
Description
Part Number
Manufacturer
C1, C10
56 pF Chip Capacitors
ATC600F560JT250XT
ATC
ATC
C11, C12, C17, C18,
C19
51 pF Chip Capacitors
ATC600F510JT250XT
C6, C7
C8
10 pF Chip Capacitors
6.8 pF Chip Capacitor
2.4 pF Chip Capacitor
10 μF Chip Capacitors
ATC600F100JT250XT
ATC600F6R8BT250XT
ATC600F2R4BT250XT
C5750X7S2A106M
ATC
ATC
ATC
C9
C13, C14, C15, C16,
C25, C26
TDK
C20
C21, C22
C23
C24
Q1
1 μF Chip Capacitor
GRM21BR71H105KA12L
ATC600F8R2BT250XT
ATC600F2R7BT250XT
ATC600F1R5BT250XT
MMRF2010N
Murata
ATC
8.2 pF Chip Capacitors
2.7 pF Chip Capacitor
ATC
1.5 pF Chip Capacitor
ATC
RF Power LDMOS Transistor
3.9 kΩ, 1/16 W Chip Resistor
1 kΩ, 1/16 W Chip Resistor
NXP
R1
RR0816P-392-B-T5
RR0816P-102-B-T5
—
Susumu
Susumu
MTL
R2
PCB
Taconic RF60A 0.025″, ε = 6.15
r
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
6
TYPICAL CHARACTERISTICS — 1030–1090 MHz
36
35
80
70
60
36
35
80
70
60
1090 MHz
1090 MHz
34
33
32
31
30
29
28
34
33
32
31
30
29
28
1030 MHz
1030 MHz
50
40
30
50
40
30
η
η
G
D
G
D
ps
ps
1090 MHz
1090 MHz
= 150 mA
1030 MHz
1030 MHz
20
10
0
20
10
0
V
= 52 V, I
= 80 mA, I
V
= 52 V, I
= 80 mA, I
= 150 mA
DD
DQ1 DQ2
DD
DQ1
DQ2
Pulse Width = 128 μsec, Duty Cycle = 10%
Pulse Width = 2 msec, Duty Cycle = 20%
0
50
100
150
200
250
300
350 400
0
50 100 150 200 250
300
350 400
P
, OUTPUT POWER (WATTS) PEAK
P , OUTPUT POWER (WATTS) PEAK
out
out
Figure 7. Power Gain and Drain Efficiency versus
Output Power and Frequency — Long Pulse
Figure 6. Power Gain and Drain Efficiency versus
Output Power and Frequency
350
350
300
250
1030 MHz
1030 MHz
1090 MHz
300
250
200
150
100
1090 MHz
200
150
100
V
= 52 V, I
= 80 mA, I
= 150 mA
V
= 52 V, I
= 80 mA, I
= 150 mA
DD
DQ1
DQ2
DD
DQ1
DQ2
50
0
50
0
Pulse Width = 128 μsec, Duty Cycle = 10%
Pulse Width = 2 msec, Duty Cycle = 20%
0
0.05
0.1
0.15
0.2
0.25
0.3
0
0.05
0.1
0.15
0.2
0.25
0.3
P
INPUT POWER (WATTS) PEAK
P , INPUT POWER (WATTS) PEAK
in
in,
Figure 8. Output Power versus Input Power and Frequency
Figure 9. Output Power versus Input Power and
Frequency — Long Pulse
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
7
1030–1090 MHz REFERENCE CIRCUIT
Z
source
f = 1090 MHz
f = 1030 MHz
Z = 50 Ω
o
f = 1090 MHz
f = 1030 MHz
Z
load
f
Z
Z
load
source
MHz
Ω
Ω
1030
1090
27.4 + j23.65
32.5 + j29
1.57 + j1.07
1.35 + j1.5
Z
Z
= Test circuit input impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 10. Series Equivalent Source and Load Impedance — 1030–1090 MHz
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
8
1090 MHz REFERENCE CIRCUIT — 1.97″ x 2.76″ (5.0 cm x 7.0 cm)
R1
R2
C25
V
DD1
C17
C19
C20
C18
C1
C26
C13*
C14*
C11
C23
C21
C9
C8
C6
Q1
C24
C7
C10
C12
C15*
C16*
C22
Rev. B
V
DD2
* Stacked components
Note: Component numbers C2, C3, C4, and C5 are not used.
Figure 11. MMRF2010N Reference Circuit Component Layout — 1090 MHz
Table 9. MMRF2010N Reference Circuit Component Designations and Values — 1090 MHz
Part
Description
Part Number
Manufacturer
C1, C10
56 pF Chip Capacitors
ATC600F560JT250XT
ATC
ATC
C11, C12, C17, C18,
C19
51 pF Chip Capacitors
ATC600F510JT250XT
C6, C7
C8
10 pF Chip Capacitors
6.8 pF Chip Capacitor
2.4 pF Chip Capacitor
10 μF Chip Capacitors
ATC600F100JT250XT
ATC600F6R8BT250XT
ATC600F2R4BT250XT
C5750X7S2A106M
ATC
ATC
ATC
C9
C13, C14, C15, C16,
C25, C26
TDK
C20
C21, C22
C23
C24
Q1
1 μF Chip Capacitor
GRM21BR71H105KA12L
ATC600F8R2BT250XT
ATC600F2R7BT250XT
ATC600F1R5BT250XT
MMRF2010N
Murata
ATC
8.2 pF Chip Capacitors
2.7 pF Chip Capacitor
ATC
1.5 pF Chip Capacitor
ATC
RF Power LDMOS Transistor
3.9 kΩ, 1/16 W Chip Resistor
1 kΩ, 1/16 W Chip Resistor
NXP
R1
RR0816P-392-B-T5
RR0816P-102-B-T5
—
Susumu
Susumu
MTL
R2
PCB
Taconic RF60A 0.025″, ε = 6.15
r
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
9
TYPICAL CHARACTERISTICS — 1090 MHz
REFERENCE CIRCUIT
35
34
33
32
31
30
29
28
27
26
25
24
90
70
η
D
50
G
30
ps
10
300
250
200
150
100
V
= 50 Vdc, f = 1090 MHz
P
DD
out
I
= 80 mA, I
= 150 mA
DQ1
DQ2
Pulse Width =128 μsec
Duty Cycle = 10%
50
0
0.35
0.0
0.05
0.1
0.15
0.2
0.25
0.3
P , INPUT POWER (WATTS) PEAK
in
Figure 12. Power Gain, Drain Efficiency and Output
Power versus Input Power
300
250
200
150
100
50
V
= 50 Vdc, f = 1090 MHz
DD
I
= 80 mA, I
= 150 mA
DQ1
DQ2
Pulse Width = 128 μsec
Duty Cycle = 10%
0
0.0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
P , INPUT POWER (WATTS) PEAK
in
Figure 13. Output Power versus Input Power
f
Z
Z
load
source
MHz
Ω
Ω
1090
36.7 – j29
1.3 + j0.60
Z
Z
= Test circuit input impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 14. Series Equivalent Source and Load Impedance — 1090 MHz
MMRF2010N MMRF2010GN
10
RF Device Data
NXP Semiconductors
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE
Table 10. 1090 MHz Narrowband Performance (1,2) (In NXP Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ1 = 80 mA,
I
DQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Characteristic
Symbol
Min
30.5
57.0
Typ
32.1
61.4
Max
34.0
—
Unit
dB
Power Gain
G
ps
D
2nd Stage Drain Efficiency
η
%
1. Part internally input matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
11
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4″ x 5″ (10.2 cm x 12.7 cm)
C7
V
DD1
C17
C13
C12
C20
V
R1
R2
GG2
C6
C11
V
DD2
V
GG1
C19
C9
C8
C5
C4
C1
C10
C2 C3
R3
Thermal Sense
D1
R4
U1
R5
P
DET
V
DD2
C14
R7
C21
R6
C24
C23
V
3
C22
C15
C16
C18
Rev. 0
Figure 15. MMRF2010N Narrowband Test Circuit Component Layout — 1090 MHz
Table 11. MMRF2010N Narrowband Test Circuit Component Designations and Values — 1090 MHz
Part
Description
Part Number
ATC600F470JT250XT
ATC100B2R7CT500XT
ATC100B2R0BW500XT
GRM31MR71H105KA88L
ATC100B430JT500XT
ATC100B100JT500XT
ATC100B4R7CT500XT
C5750X752A106M230KB
MCGPR100V227M16X26-RH
ATC600F300JT250XT
C0805C103J5RAC-TU
C1206C104K1RAC-TU
ATC800B470JT500XT
C2012X7R2E102K085AA
HSMS--2800--TR1G
CRCW08052K20JNEA
CWCR08050000Z0EA
RR1220P-102-D
Manufacturer
C1
C2
C3
C4
47 pF Chip Capacitor
ATC
ATC
ATC
2.7 pF Chip Capacitor
2.0 pF Chip Capacitor
1 μF Chip Capacitor
Murata
ATC
C5, C6, C7, C11, C14
43 pF Chip Capacitors
C8, C9
10 pF Chip Capacitors
ATC
C10
4.7 pF Chip Capacitor
ATC
C12, C13, C15, C16, C20
10 μF Chip Capacitors
TDK
C17, C18
C19
C21
C22
C23
C24
D1
220 μF, 100 V Electrolytic Capacitors
30 pF Chip Capacitor
Multicomp
ATC
10 nF Chip Capacitor
Kemet
0.1 μF Chip Capacitor
Kemet
47 pF Chip Capacitor
ATC
1000 pF Chip Capacitor
Diode Schottky RF SGL 70 V SOT-23
2.2 kΩ, 1/8 W Chip Resistor
0 Ω, 1 A Chip Resistor
TDK
Avago Technologies
Vishay
R1
R2
Vishay
R3
1 kΩ, 1/10 W Chip Resistor
50 Ω, 10 W Chip Resistor
15 kΩ, 1/10 W Chip Resistor
51 Ω, 1/8 W Chip Resistor
470 kΩ, 1/4 W Chip Resistor
IC Detector RF PWR 3GHZ SC70--6
Susumu
Anaren
Susumu
KOA Speer
Vishay
R4
060120A25X50--2
R5
RR1220P-153-D
R6
RK73B2ATTD510J
R7
CRCW1206470KFKEA
LT5534ESC6#TRMPBF
—
U1
Linear Technology
MTL
PCB
Rogers, RO4350B, 0.020″, ε = 3.66
r
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
12
TYPICAL CHARACTERISTICS — 1090 MHz
NARROWBAND PRODUCTION TEST FIXTURE
56
55
54
53
52
70
60
34
V
= 50 Vdc, I
= 80 mA, I
= 150 mA
DD
DQ1
DQ2
f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle
33
32
50
40
30
20
10
G
ps
51
50
49
31
30
29
28
48
47
η
D
V
= 50 Vdc, I
= 80 mA, I
= 150 mA
DD
DQ1
DQ2
f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle
46
45
14
16
18
20
22
24
26
28
30
10
100
, OUTPUT POWER (WATTS) PEAK
500
P , INPUT POWER (dBm) PEAK
in
P
out
f
Figure 17. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
1090
265
284
Figure 16. Output Power versus Input Power
33
32
31
35
34
90
80
70
60
50
40
30
20
10
G
V
= 50 Vdc, I
= 80 mA, I
= 150 mA
ps
DD
DQ1
DQ2
f = 1090 MHz, Pulse Width = 128 μsec
10% Duty Cycle
33
32
31
30
29
–55_C
85_C
30
29
28
27
26
25
T
= –55_C
C
25_C
50 V
25_C
45 V
40 V
η
D
I
= 80 mA, I
= 150 mA
35 V
85_C
DQ1
DQ2
f = 1090 MHz, Pulse Width = 128 μsec
V
= 30 V
P
28
27
DD
10% Duty Cycle
0
50
100
150
200
250
300
350
10
100
, OUTPUT POWER (WATTS) PEAK
500
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 19. Power Gain versus Output Power
and Drain--Source Voltage
Figure 18. Power Gain and Drain Efficiency
versus Output Power
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
13
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
Ω
Ω
1090
13.6 – j24.4
1.3 + j0.4
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 20. Narrowband Series Equivalent Source and Load Impedance — 1090 MHz
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
14
0.221
(5.61)
0.180
(4.57)
2X SOLDER PADS
(1)
(8.94)
0.352
(1)
0.590
(14.99)
0.372
(9.45)
12X SOLDER PADS
0.040
(1.02)
0.020
(0.51)
Inches
(mm)
(1)
0.723
(18.36)
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
Figure 21. PCB Pad Layout for TO--270WB--14
0.221
(5.61)
0.180
(4.57)
0.351
(8.92)
0.310
(7.87)
0.463
(11.76)
Solder pad with
thermal via structure.
0.020
(0.51)
0.040
(1.02)
0.720
(18.29)
Figure 22. PCB Pad Layout for TO--270WBG--14
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
15
PACKAGE DIMENSIONS
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
16
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
17
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
18
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
19
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
20
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
21
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
Electromigration MTTF Calculator
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Oct. 2015
Apr. 2017
•
Initial Release of Data Sheet
•
•
Typical Wideband Performance table: added 2 msec, 20% duty cycle operating conditions and data, p. 1
Table 1, Maximum Ratings: over--temperature range extended to cover case operation from –55°C to
+150°C and operating junction range from –55°C to +225°C from the previous lower limit of –40°C to allow
for a cold start after temperature soak at the minimum case operating temperature, p. 2
•
•
•
•
Figure 3, Normalized I versus Case Temperature: updated to reflect performance measured in reference
DQ
circuit, p. 4
Table 7, 1030–1090 MHz Performance table: added 2 msec, 20% duty cycle operating conditions and data,
p. 5
1030–1090 MHz reference circuit: added performance data and graphs, reference circuit component layout
and component designations, pp. 5–8
Figure 5, 1030–1090 MHz Series Equivalent Source and Load Impedances: impedance data updated to
reflect 1030–1090 MHz reference circuit addition to data sheet, p . 8 (renumbered as Figure 10 after new
Figures 5--9 added)
•
•
Figure 6, 1090 MHz MMRF2010N Reference Circuit Component Layout: layout updated to reflect actual
circuit, p. 9 (renumbered as Figure 11 after new Figures 5--9 added)
Table 8, 1090 MHz reference circuit component designations and values: R1 and R2 chip resistors
replaced to support changes made to the I compensation circuit to extend the over--temperature range to
DQ
cover –55°C to +85°C from the previous lower limit of –40°C, p. 9 (renumbered as Table 9 after new
Table 8 added)
•
Figure 18, Power Gain and Drain Efficiency versus Output Power: T = –40°C changed –55°C to show
C
current T operation of fixture, p. 13
C
MMRF2010N MMRF2010GN
RF Device Data
NXP Semiconductors
22
How to Reach Us:
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.V.
All other product or service names are the property of their respective owners.
E 2015, 2017 NXP B.V.
Document Number: MMRF2010N
Rev. 1, 04/2017
相关型号：
©2020 ICPDF网 联系我们和版权申明