935351859178 [NXP]
RF Power Field-Effect Transistor;
| 型号： | 935351859178 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总23页 (文件大小：1199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFX1K80H
Rev. 1, 09/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRFX1K80H
This high ruggedness device is designed for use in high VSWR industrial,
medical, broadcast, aerospace and mobile radio applications. Its unmatched
input and output design supports frequency use from 1.8 to 400 MHz.
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Typical Performance
Frequency
(MHz)
V
DD
(V)
P
(W)
G
D
(%)
out
ps
Signal Type
(dB)
27.8
27.1
25.1
23.6
25.9
23.5
23.5
21.3
(1)
27
CW
65
65
62
60
65
65
60
63
1800 CW
1800 Peak
1800 CW
1600 CW
1800 Peak
1800 CW
1560 CW
250 Avg.
75.6
69.5
78.7
82.5
69.0
78.0
75.9
43.3
64
Pulse (100 sec, 10% Duty Cycle)
81.36
CW
(2,3)
87.5–108
123/128
144
CW
Pulse (100 sec, 10% Duty Cycle)
NI--1230H--4S
CW
CW
175
174–230
DVB--T (8k OFDM)
(3)
Doherty
(4)
230
Pulse (100 sec, 20% Duty Cycle)
Pulse (12 sec, 10% Duty Cycle)
65
63
1800 Peak
1700 Peak
25.1
22.8
75.1
64.9
Gate A
Gate B
Drain A
Drain B
3
4
1
2
325
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(4)
230
Pulse
> 65:1 at all
14 Peak
(3 dB
65
No Device
Degradation
(100 sec, 20% Phase Angles
(Top View)
Duty Cycle)
Overdrive)
Note: The backside of the package is the
source terminal for the transistor.
1. Measured in 27 MHz reference circuit (page 6).
2. Measured in 87.5–108 MHz broadband reference circuit (page 11).
3. The values shown are the center band performance numbers across the indicated
frequency range.
Figure 1. Pin Connections
4. Measured in 230 MHz production test fixture (page 17).
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
Lower thermal resistance option in over--molded plastic package: MRFX1K80N
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
2017–2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +179
–6.0, +10
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
Derate above 25C
P
2247
11.2
W
W/C
C
D
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.09
C/W
JC
CW: Case Temperature 99C, 1800 W CW, 65 Vdc, I
= 150 mA, 98 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
0.017
C/W
JC
Pulse: Case Temperature 65C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, I = 100 mA, 230 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
C3, passes 2000 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
179
—
—
193
—
1
—
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mAdc)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
10
100
Adc
mAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
(V = 179 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 740 Adc)
V
V
2.1
2.4
—
2.5
2.8
2.9
3.2
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 65 Vdc, I
= 100 mAdc, Measured in Functional Test)
D(A+B)
DD
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.76 Adc)
V
0.21
44.7
GS
D
(4)
Forward Transconductance
(V = 10 Vdc, I = 43 Adc)
g
—
—
fs
DS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
MRFX1K80H
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 65 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
2.9
203
760
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 65 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 65 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In NXP Production Test Fixture, 50 ohm system) V = 65 Vdc, I
= 100 mA, P = 1800 W Peak (360 W Avg.),
out
DD
DQ(A+B)
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
G
24.0
70.0
—
25.1
75.1
26.5
—
dB
%
ps
Drain Efficiency
Input Return Loss
D
IRL
–14.4
–9
dB
Table 5. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
230
Pulse
> 65:1 at all
14 W Peak
65
No Device Degradation
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
MRFX1K80HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230H--4S
1. Each side of device measured separately.
MRFX1K80H
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
2000
1000
1.08
1.06
V
= 65 Vdc
DD
500 mA
C
C
iss
I
= 100 mA
DQ(A+B)
1.04
1.02
1000 mA
1500 mA
oss
100
10
1
1.00
0.98
0.96
0.94
0.92
Measured with 30 mV(rms)ac @ 1 MHz
C
rss
V
= 0 Vdc
GS
0
10
20
30
40
50
60
70
–50
–25
0
25
50
75
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
T , CASE TEMPERATURE (C)
C
DS
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
Figure 2. Capacitance versus Drain--Source Voltage
100
–3.21
500
1000
1500
–2.79
–2.69
–2.61
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
9
10
V
= 65 Vdc
DD
8
10
10
10
10
I
= 28.1 Amps
D
I
= 32.2 Amps
D
7
6
5
I
D
= 35.6 Amps
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – CW
MRFX1K80H
RF Device Data
NXP Semiconductors
4
LINEAR MODEL
890 pF
2.9 pF
0.2 nH
0.2 nH
0.2
DRAIN A
GATE A
4 pF
753 pF
18 V
3.1
196 pF
4 pF
GSA
3
V
GS
890 pF
2.9 pF
0.2 nH
0.2 nH
0.2
DRAIN B
GATE B
4 pF
753 pF
18 V
3.1
196 pF
4 pF
GSA
3
V
GS
Figure 5. Simple Linear Model for the MRFX1K80H
MRFX1K80H
RF Device Data
NXP Semiconductors
5
27 MHz REFERENCE CIRCUIT – 2.9 6.9 (73 mm 175 mm)
Table 7. 27 MHz Performance (In NXP Reference Circuit, 50 ohm system)
I
= 200 mA, P = 3 W, CW
DQ(A+B)
in
Frequency
(MHz)
V
(V)
P
(W)
G
D
DD
out
ps
(dB)
26.0
27.0
27.8
(%)
82.3
80.1
75.6
27
50
1200
1520
1800
57.5
65
MRFX1K80H
RF Device Data
NXP Semiconductors
6
27 MHz REFERENCE CIRCUIT – 2.9 6.9 (73 mm 175 mm)
Temperature Compensation
D94843
Q2
L2
C12
C17
C15
C7
C6
C19
R1
R2
L1
C10
C5
Q1
T1
C1
C2
C11
C16
C8
C9
C18 C20
MRFX1K80H
T2
MRF1K50H
D1
C13
MRFE6VP61K25H
Rev. 0
R3
Note: Component numbers C3, C4 and C14 are not used.
C101
C109
C103 C104 C105 C106
U101
C110
Q101
R101
R102
D101
R103
R104
R105
C108
C107
R109
C102
R106
R107
R108
D50876
Temperature Compensation Detail
T2 Transformer Detail
Figure 6. MRFX1K80H Reference Circuit Component Layout – 27 MHz
MRFX1K80H
RF Device Data
NXP Semiconductors
7
27 MHz REFERENCE CIRCUIT – 2.9 6.9 (73 mm 175 mm)
Table 8. MRFX1K80H Reference Circuit Component Designations and Values – 27 MHz
Part
Description
Part Number
Manufacturer
ATC
C1, C17, C18
C2, C15, C16
C5
1000 pF Chip Capacitor
ATC100B102JT50XT
39 K pF Chip Capacitor
470 pF Chip Capacitor
2.2 F Chip Capacitor
470 pF Chip Capacitor
22 pF Chip Capacitor
470 F, 100 V Electrolytic Capacitor
1000 pF Chip Capacitor
Green LED, 1206
ATC200B393KT50XT
ATC100C471JT2500XT
HMK432B7225KM-T
ATC100B471JT200XT
ATC100B220JT500XT
MCGPR100V477M16X32-RH
C2012X7R2E102M
LG N971-KN-1
ATC
ATC
C6, C8
Taiyo Yuden
ATC
C7, C9, C19, C20
C10, C11
C12
C13
D1
ATC
Multicomp
TDK
OSRAM
Coilcraft
Belden
L1
82 nH Inductor
1812SMS-82NJLC
8074
L2
7 Turns, #16 AWG, ID = 10 mm Inductor,
Hand Wound
Q1
RF Power LDMOS Transistor
33 , 3 W Chip Resistor
MRFX1K80H
1-2176070-3
NXP
R1, R2
R3
TE Connectivity
Vishay
9.1 k 1/4 W Chip Resistor
CRCW12069K10FKEA
D94843
PCB
Arlon TC350 0.030 = 3.5
MTL
r
Transformer
T1 Core
Multi-Aperture Core, 43 Material
2 Turns, #20 AWG Magnetic Wire
1 Turn, #24 AWG Teflon Wire
61 Round Cable Core, x4
2843000302
8076
Fair-Rite
Belden
T1 Primary
T1 Secondary
T2 Core
5854/7 BL005
2661102002
LH03010
Alpha Wire
Fair-Rite
Mueller
T2 Primary
Copper Pipe, Type L, ID = 3/8, OD = 1/2,
cut to 2.4
T2 Secondary
3 Turns, #16 AWG PTFE Covered Wire, Twisted TEF16
RF Parts Company
MTL
T2 PCB
Arlon TC350 0.030 = 3.5, x2
D50876
r
Temperature Compensation
C101, C102, C104, C106,
C108, C110
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C103, C105, C107, C109
1 nF Chip Capacitor
C2012X7R2E102M
LH N974-KN-1
TDK
D101
Red LED, 1206
OSRAM
ON Semiconductor
Vishay
Q101
NPN Bipolar Transistor
2.2 k, 1/8 W Chip Resistor
1.2 k, 1/8 W Chip Resistor
10 , 1/8 W Chip Resistor
1 k, 1/8 W Chip Resistor
3.9 k, 1/8 W Chip Resistor
200 1/8 W Chip Resistor
BC847ALT1G
R101
CRCW08052K20JNEA
CRCW08051K20FKEA
RK73H2ATTD10R0F
RR1220P-102-D
R102, R109
R103
Vishay
KOA Speer
Susumu
Vishay
R104
R105
CRCW08053K90JNEA
CRCW0805200RJNEA
R106
Vishay
R107
5 k Multi--turn Cermet Trimming Potentiometer, 3224W-1-502E
Bourns
11 Turns
R108
U101
10 1/4 W Chip Resistor
CRCW120610R0JNEA
LP2951ACDMR2G
Vishay
Voltage Regulator 5 V, Micro8
ON Semiconductor
Note: Refer to MRFX1K80H’s printed circuit boards and schematics to download the 27 MHz heatsink drawing.
MRFX1K80H
RF Device Data
NXP Semiconductors
8
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
10
34
2000
1800
1600
1400
1200
1000
800
V
= 50 V
DD
57.5 V
V
= 65 V
57.5 V
50 V
DD
32
30
28
65 V
D
26
24
22
20
18
G
ps
65 V
600
57.5 V
50 V
400
200
I
= 200 mA, f = 27 MHz
I
= 200 mA, f = 27 MHz
DQ(A+B)
DQ(A+B)
0
0
1
2
3
4
5
6
7
8
9
0
200 400 600 800 1000 1200 1400 1600 1800 2000
P
, OUTPUT POWER (WATTS)
P , INPUT POWER (WATTS)
in
out
Figure 8. Power Gain and Drain Efficiency
versus CW Output Power and
Drain--Source Voltage
P1dB
(W)
P
(W)
f
V
DD
(V)
sat
(MHz)
50
825
1010
1150
1250
1600
1900
27
57.5
65
Figure 7. CW Output Power versus Input Power
and Drain--Source Voltage
MRFX1K80H
RF Device Data
NXP Semiconductors
9
27 MHz REFERENCE CIRCUIT
f
Z
Z
load
source
MHz
27
8.70 + j6.28
6.21 + j2.68
Z
Z
= Test circuit impedance as measured from
gate to gate, balanced configuration.
source
= Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 9. Series Equivalent Source and Load Impedance – 27 MHz
MRFX1K80H
RF Device Data
NXP Semiconductors
10
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (73 mm 130 mm)
Table 9. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
I
= 200 mA, P = 7 W, CW
DQ(A+B)
in
Frequency
(MHz)
V
P
(W)
G
D
DD
out
ps
(V)
60
60
60
(dB)
23.4
23.6
23.5
(%)
84.9
82.5
80.0
87.5
98
1521
1600
1556
108
MRFX1K80H
RF Device Data
NXP Semiconductors
11
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (73 mm 130 mm)
C25
C26
C22
C27
C21
D94849
C28
C6 C7
C5
L4
R2
L1
C20
C19
C18
C17
C4
C16
C24
R1
C3
Q1
C11
L3
C1
C2
C23*
C15*
L2
R3
C14
C8
MRFX1K80H
MRF1K50H
MRFE6VP61K25H
C9 C10
Rev. 0
*C15 and C23 are mounted vertically.
Note: Component numbers C12 and C13 are not used.
0.34
(9)
0.45
(11)
0.22
(6)
Inches
(mm)
L3 total wire length = 1.7 (43 mm)
Figure 10. MRFX1K80H 87.5–108 MHz Broadband Reference Circuit Component Layout
Figure 11. MRFX1K80H 87.5–108 MHz Broadband Reference Circuit Component Layout – Bottom
MRFX1K80H
RF Device Data
NXP Semiconductors
12
Table 10. MRFX1K80H 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C2
33 pF Chip Capacitor
ATC100B330JT500XT
ATC200B103KT50XT
ATC100B471JT200XT
MIN02-002EC101J-F
ATC100B120GT500XT
EEV-FC2A221M
ATC
ATC
ATC
CDE
ATC
C4, C5, C8
10,000 pF Chip Capacitor
470 pF Chip Capacitor
C7, C10, C15, C16, C17, C23
C11
100 pF, 300 V Mica Capacitor
12 pF Chip Capacitor
C14, C24
C25, C26, C27
C28
220 F, 100 V Electrolytic Capacitor
22 F, 35 V Electrolytic Capacitor
17.5 nH Inductor, 6 Turns
Panasonic--ECG
Nichicon
UUD1V220MCL1GS
B06TJLC
L1, L2
L3
Coilcraft
1.5 mm Non--Tarnish Silver Plated Copper Wire,
SP1500NT-001
Scientific Wire Company
Total Wire Length = 1.7/43 mm
L4
22 nH Inductor
1212VS-22NMEB
MRFX1K80H
Coilcraft
Q1
RF Power LDMOS Transistor
10 , 1/4 W Chip Resistor
33 , 2 W Chip Resistor
NXP
R1
CRCW120610R0JNEA
1-2176070-3
Vishay
R2, R3
Thermal Pad
PCB
TE Connectivity
t-Global Technology
MTL
TG Series Soft Thermal Conductive Pad
TG6050-150-150-5.0-0
D94849
Arlon TC350 0.030, = 3.5
r
Note: Refer to MRFX1K80H’s printed circuit boards and schematics to download the 87.5–108 MHz heatsink drawing.
MRFX1K80H
RF Device Data
NXP Semiconductors
13
TYPICAL CHARACTERISTICS – 87.5–108 MHz, 60 V
BROADBAND REFERENCE CIRCUIT
27
26
90
85
D
80
25
24
75
G
70
23
22
21
ps
1700
1600
1500
1400
1300
P
out
20
19
18
V
= 60 Vdc, P = 7 W, l
= 200 mA
DQ(A+B)
DD
in
87 89
91 93 95
97 99 101 103 105 107 109
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
1800
98 MHz
1600
1400
1200
1000
800
600
400
200
0
108 MHz
87.5 MHz
V
= 60 Vdc, I
= 200 mA
DD
DQ(A+B)
0
2
4
6
8
10
12
P
INPUT POWER (WATTS)
in,
Figure 13. CW Output Power versus Input Power and Frequency
34
32
30
28
26
24
22
20
90
80
70
60
50
40
30
20
f = 87.5 MHz
G
ps
108 MHz
98 MHz
87.5 MHz
98 MHz
D
108 MHz
= 60 Vdc, l
V
= 200 mA
DQ(A+B)
DD
0
200 400
600
800 1000 1200 1400 1600 1800
P
, OUTPUT POWER (WATTS)
out
Figure 14. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRFX1K80H
RF Device Data
NXP Semiconductors
14
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Z = 10
o
Z
source
f = 87.5 MHz
f = 87.5 MHz
f = 108 MHz
f = 108 MHz
Z
load
f
Z
Z
load
source
MHz
87.5
98
3.69 + j5.19
3.60 + j4.90
3.16 + j4.69
3.90 + j4.73
3.88 + j3.99
3.35 + j3.95
108
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
load
from drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
Z
Z
source
load
Figure 15. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
MRFX1K80H
RF Device Data
NXP Semiconductors
15
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
H2
87.5 MHz
175 MHz –33 dB
Fundamental (F1)
H3 262.5 MHz –28 dB
H4
350 MHz –51 dB
H3
H4
H2
(262.5 MHz) (350 MHz)
(175 MHz)
–33 dB
–28 dB
–51 dB
H3
H2
H4
35 MHz
Span: 350 MHz
Center: 228.5 MHz
Figure 16. 87.5 MHz Harmonics @ 1300 W CW
MRFX1K80H
RF Device Data
NXP Semiconductors
16
230 MHz PRODUCTION TEST FIXTURE – 6.0 4.0 (152 mm 102 mm)
C10
C28
C27
C24
C12
C6
C9
C26
D93270
Coax1
Coax3
R1
L3
C17*
C18*
C2
L1
L2
C13 C14
C15 C16
C4*
C19*
C20*
C21*
C22*
C3
C1
C23*
L4
R2
Coax4
Coax2
MRFX1K80H
Rev. 0
C25
C30
C29
C11
C5
C7
C31
C8
*C4, C17, C18, C19, C20, C21, C22 and C23 are mounted vertically.
Figure 17. MRFX1K80H Test Fixture Component Layout – 230 MHz
Table 11. MRFX1K80H Test Fixture Component Designations and Values – 230 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3
C4
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
27 pF Chip Capacitor
22 F, 35 V Tantalum Capacitor
0.1 F Chip Capacitor
220 nF Chip Capacitor
1000 pF Chip Capacitor
24 pF Chip Capacitor
20 pF Chip Capacitor
ATC100B270JT500XT
T491X226K035AT
ATC
C5, C6
C7, C9
C8, C10
Kemet
AVX
CDR33BX104AKWS
C1812C224K5RACTU
ATC100B102JT50XT
ATC800R240JT500XT
ATC800R200JT500XT
ATC100B241JT200XT
ATC100B7R5CT500XT
Kemet
ATC
C11, C12, C24, C25
C13
ATC
C14, C15, C16
ATC
C17, C18, C19, C20, C21, C22 240 pF Chip Capacitor
C23 7.5 pF Chip Capacitor
C26, C27, C28, C29, C30, C31 470 F, 100 V Electrolytic Capacitor
ATC
ATC
MCGPR100V477M16X32-RH
Multicomp
Micro--Coax
Coilcraft
Coilcraft
Vishay
MTL
Coax1, 2, 3, 4
L1, L2
25 Semi Rigid Coax Cable, 2.2 Shield Length UT-141C-25
5 nH Inductor, 2 Turns
6.6 nH Inductor, 2 Turns
10 , 1/4 W Chip Resistor
A02TJLC
L3, L4
GA3093-ALC
CRCW120610R0JNEA
D93270
R1, R2
PCB
Arlon AD255A 0.030, = 2.55
r
MRFX1K80H
17
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C
PRODUCTION TEST FIXTURE
2500
V
= 65 Vdc, f = 230 MHz
DD
Pulse Width = 100 sec, 20% Duty Cycle
2000
1500
P
= 5.6 W
in
1000
500
0
P
= 2.8 W
in
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 18. Output Power versus Gate--Source
Voltage at a Constant Input Power
27
68
90
80
70
60
50
40
30
20
10
V
= 65 Vdc, I
= 100 mA, f = 230 MHz
V
= 65 Vdc, f = 230 MHz
DD
DQ(A+B)
DD
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec
20% Duty Cycle
26
25
24
23
22
64
60
56
52
48
44
I
= 900 mA
DQ(A+B)
600 mA
300 mA
D
G
ps
900 mA
21 100 mA
20
600 mA
300 mA
100 mA
100
19
50
24
28
32
36
40
44
1000
3000
P , INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
f
Figure 20. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
2080
2300
Figure 19. Output Power versus Input Power
90
80
26
24
22
20
18
16
14
30
V
= 65 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
–40_C
28 Pulse Width = 100 sec, 20% Duty Cycle
25_C
85_C 70
26
65 V
G
ps
60
50
40
30
20
24
22
20
18
16
14
60 V
T
= –40_C
D
C
55 V
50 V
25_C
85_C
40 V
I
= 100 mA, f = 230 MHz
DQ
V
= 30 V
500
DD
Pulse Width = 100 sec, 20% Duty Cycle
1000 1500
, OUTPUT POWER (WATTS) PEAK
10
4000
100
0
2000
2500
30
1000
P
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 22. Power Gain versus Output Power
and Drain--Source Voltage
Figure 21. Power Gain and Drain Efficiency
versus Output Power
MRFX1K80H
RF Device Data
NXP Semiconductors
18
230 MHZ PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
230
1.1 + j2.7
2.2 + j2.9
Z
Z
= Test fixture impedance as measured from
gate to gate, balanced configuration.
source
= Test fixture impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 23. Series Equivalent Source and Load Impedance – 230 MHz
MRFX1K80H
RF Device Data
NXP Semiconductors
19
PACKAGE DIMENSIONS
MRFX1K80H
RF Device Data
NXP Semiconductors
20
MRFX1K80H
RF Device Data
NXP Semiconductors
21
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2017
Sept. 2018
Initial release of data sheet
Typical Performance table: updated values for 81.36 MHz reference circuit; added performance information
for 175 MHz reference circuit and 174–230 MHz Doherty reference circuit, p. 1
Feature bullets: updated Aerospace feature bullets, p. 1
Fig. 3, Normalized V versus Quiescent Current and Case Temperature: corrected 50 Vdc to 65 Vdc to
GS
reflect actual performance in graph, p. 4
Fig. 5, Linear Model: added simple linear model for MRFX1K80H, p. 5
Fig. 10 (previously Fig. 9), 87.5–108 MHz Broadband Reference Circuit: added note regarding components
not used, p. 12
Fig. 20 (previously Fig. 19), Power Gain and Drain Efficiency versus Output Power and Quiescent Current:
updated graph to reflect correct Drain Efficiency performance. Output Power axis value “3” changed to “50”
to reflect actual output power performance, p. 18
MRFX1K80H
RF Device Data
NXP Semiconductors
22
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E 2017–2018 NXP B.V.
Document Number: MRFX1K80H
Rev. 1, 09/2018
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