BAT74-T [NXP]
DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode;
| 型号： | BAT74-T |
| 厂家： | 
NXP |
| 描述： | DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode 二极管 |
| 文件： | 总7页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAT74
Schottky barrier double diode
1996 Mar 19
Product specification
Supersedes data of March 1991
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
FEATURES
PINNING
• Low forward voltage
• Guard ring protected
• Small SMD package.
PIN
DESCRIPTION
1
2
3
4
cathode (k1)
cathode (k2)
anode (a2)
anode (a1)
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
handbook, halfp
4
3
• Protection circuits
• Blocking diodes.
4
3
DESCRIPTION
1
2
1
2
Planar Schottky barrier double diode.
Two separate dies encapsulated in a
SOT143 small plastic SMD package.
Top view
MAM194
Marking code: L41.
Fig.1 Simplified outline (SOT143), pin configuration and symbol.
1996 Mar 19
2
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
30
V
−
−
−
IF
200
300
mA
mA
mA
mW
°C
IFRM
IFSM
Ptot
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
amb ≤ 25 °C; see Fig.2
600
T
230
−
Tstg
storage temperature
+150
125
−65
−
Tj
junction temperature
°C
Tamb
operating ambient temperature
+125
°C
−65
Double diode operation
VR
continuous reverse voltage
30
V
−
−
−
−
60
V
series connection
IF
110(1)
mA
mA
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
200
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA; note 1
IF = 10 mA
320
400
500
800
2
mV
mV
mV
mV
µA
IF = 30 mA
IF = 100 mA
IR
trr
reverse current
VR = 25 V; note 2; see Fig.4
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
5
ns
measured at IR = 1 mA; see Fig.6
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
Notes
1. Temperature coefficient of forward voltage −0.6%/K.
2. Pulsed test: tp = 300µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
500
UNIT
K/W
Rth j-a
Note
1. Refer to SOT143 standard mounting conditions
.
1996 Mar 19
4
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
GRAPHICAL DATA
MSA892
MSA894
3
300
10
handbook, halfpage
I
(1) (2) (3)
F
P
tot
(mW)
(mA)
2
10
200
10
100
(1)
1
(2) (3)
1
0
10
o
0
0.4
0.8
1.2
0
75
150
T
amb
( C)
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.2 Power derating curve.
MSA893
MSA891
3
10
15
I
(1)
(2)
R
C
d
(pF)
(µA)
2
10
10
10
5
0
1
1
(3)
10
0
10
20
30
0
10
20
30
V
(V)
R
V
(V)
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 19
5
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
andbook, halfpage
I
F
dI
F
dt
t
10%
90%
Q
r
I
R
t
MRC129 - 1
f
Fig.6 Reverse recovery definitions.
1996 Mar 19
6
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.7 SOT143.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 19
7
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