BAT74S [NXP]

Schottky barrier double diode; 肖特基势垒二极管双
BAT74S
型号: BAT74S
厂家: NXP    NXP
描述:

Schottky barrier double diode
肖特基势垒二极管双

整流二极管 测试 光电二极管
文件: 总12页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
halfpage  
BAT74S  
Schottky barrier double diode  
1998 Jul 10  
Product specification  
Supersedes data of 1998 Feb 06  
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
FEATURES  
PINNING  
Low forward voltage  
Guard ring protected  
Small SMD package.  
PIN  
DESCRIPTION  
1
2,5  
3
anode (a1)  
not connected  
cathode (k2)  
anode (a2)  
APPLICATIONS  
4
6
cathode (k1)  
Ultra high-speed switching  
Voltage clamping  
Protection circuits  
Blocking diodes.  
6
5
4
1
6
4
3
DESCRIPTION  
Planar Schottky barrier double diode  
with an integrated guard ring for  
stress protection.  
MBK149  
1
2
3
MSA370  
Top view  
Two separate dies are encapsulated  
in a SOT363 small SMD plastic  
package.  
Marking code: 74.  
Fig.1 Simplified outline (SOT363) and symbol.  
1998 Jul 10  
2
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per diode  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
total power dissipation  
30  
V
IF  
200  
300  
mA  
mA  
mA  
mW  
°C  
IFRM  
IFSM  
Ptot  
tp 1 s; δ ≤ 0.5  
tp < 10 ms  
amb 25 °C; see Fig.2  
600  
T
230  
Tstg  
storage temperature  
+150  
125  
65  
Tj  
junction temperature  
°C  
Tamb  
operating ambient temperature  
+125  
°C  
65  
Double diode operation  
VR  
VR  
IF  
continuous reverse voltage  
30  
V
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
60  
V
series connection  
110(1)  
mA  
mA  
IFRM  
tp 1 s; δ ≤ 0.5  
200  
Note  
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in  
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.  
1998 Jul 10  
3
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
see Fig.3  
IF = 0.1 mA  
IF = 1 mA  
240  
mV  
320  
400  
500  
800  
2
mV  
mV  
mV  
mV  
µA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
IR  
trr  
reverse current  
VR = 25 V; note 1; see Fig.4  
reverse recovery time  
when switched from IF = 10 mA to  
IR = 10 mA; RL = 100 ;  
5
ns  
measured at IR = 1 mA  
Cd  
diode capacitance  
f = 1 MHz; VR = 1 V; see Fig.5  
10  
pF  
Note  
1. Pulsed test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
416  
UNIT  
K/W  
Rth j-a  
Note  
1. Refer to SOT363 standard mounting conditions.  
1998 Jul 10  
4
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
GRAPHICAL DATA  
MSA892  
MSA894  
3
300  
10  
handbook, halfpage  
I
(1) (2) (3)  
F
P
tot  
(mW)  
(mA)  
2
10  
200  
10  
100  
(1)  
1
(2) (3)  
1
0
10  
o
0
75  
150  
0
0.4  
0.8  
1.2  
T
amb  
( C)  
V
(V)  
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.2 Power derating curve.  
MSA893  
MSA891  
3
10  
15  
I
(1)  
(2)  
R
C
d
(pF)  
(µA)  
2
10  
10  
10  
5
0
1
1
(3)  
10  
0
10  
20  
30  
0
10  
20  
30  
V
(V)  
V
(V)  
R
R
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Reverse current as a function of reverse  
voltage; typical values.  
Fig.5 Diode capacitance as a function of reverse  
voltage; typical values.  
1998 Jul 10  
5
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
andbook, halfpage  
I
F
dI  
F
dt  
t
10%  
90%  
Q
r
I
R
t
MRC129 - 1  
f
Fig.6 Reverse recovery definitions.  
1998 Jul 10  
6
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
1998 Jul 10  
7
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Jul 10  
8
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
NOTES  
1998 Jul 10  
9
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
NOTES  
1998 Jul 10  
10  
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74S  
NOTES  
1998 Jul 10  
11  
Philips Semiconductors – a worldwide company  
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Middle East: see Italy  
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For all other countries apply to: Philips Semiconductors,  
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International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA60  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115104/00/03/pp12  
Date of release: 1998 Jul 10  
Document order number: 9397 750 04089  

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