BF547 [NXP]
NPN 1 GHz wideband transistor; NPN 1 GHz宽带晶体管
| 型号： | BF547 |
| 厂家： | 
NXP |
| 描述： | NPN 1 GHz wideband transistor |
| 文件： | 总11页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF547
NPN 1 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
FEATURES
DESCRIPTION
Low cost NPN transistor in a plastic SOT23 package.
• Feedback capacitance typ. 1 pF
• Stable oscillator operation
• High current gain
• Good thermal stability.
handbook, halfpage
3
APPLICATIONS
• It is intended for VHF and UHF TV-tuner applications
and can be used as a mixer and/or oscillator.
1
2
Top view
MSB003
PINNING
PIN
DESCRIPTION
Marking code: E16.
1
2
3
base
emitter
collector
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
20
UNIT
VCEO
VCBO
VEBO
ICM
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
transition frequency
open base
−
−
−
−
−
V
open emitter
30
3
V
open collector
V
50
300
1.6
−
mA
mW
GHz
pF
Ptot
up to Ts = 70 °C; note 1
fT
IC = 15 mA; VCE 10 V; f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
1.2
1
Cre
feedback capacitance
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCEO
VCBO
VEBO
ICM
collector-emitter voltage
collector-base voltage
emitter-base voltage
open base
−
20
V
open emitter
−
30
V
open collector
−
3
V
peak collector current
total power dissipation
storage temperature range
junction temperature
−
50
mA
mW
°C
°C
Ptot
up to Ts = 70 °C; note 1
−
300
+150
150
Tstg
Tj
−65
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
from junction to soldering point note 1
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
IC = 2 mA; VCE = 10 V
IC = 15 mA; VCE = 10 V; f = 500 MHz 0.8
MIN.
TYP. MAX. UNIT
ICBO
hFE
fT
−
−
100
250
1.6
−
nA
40
95
1.2
1
transition frequency
feedback capacitance
GHz
pF
Cre
GUM
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
−
−
maximum unilateral power
gain; note 1
20
−
dB
Note
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB .
--------------------------------------------------------------
2
2
1 – S11
1 – S22
MBB397
MBB401
400
140
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
300
100
200
100
60
0
0
20
10
1
2
50
100
150
200
1
10
10
I
(mA)
o
C
T
( C)
s
VCE = 10 V.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Power derating curve.
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
MBB474
MBB399
1.4
1.6
handbook, halfpage
handbook, halfpage
f
C
T
re
(GHz)
(pF)
1.0
0.8
0.6
0.2
0
0.1
−1
2
10
1
10
10
1
10
100
V
(V)
I
(mA)
CB
C
IE = ie = 0; f = 1 MHz.
VCE = 10 V; f = 500 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage
Fig.5 Transition frequency as a function of
collector current.
MBB408
MBB407
40
50
UM
handbook, halfpage
handbook, halfpage
G
G
UM
(dB)
40
(dB)
30
30
20
10
0
20
10
0
−10
10
2
3
4
0
10
20
30
10
10
10
I
(mA)
f (MHz)
C
VCE = 10 V; f = 100 MHz.
VCE = 10 V; IC = 15 mA.
Fig.6 Maximum unilateral power gain as a
function of collector current.
Fig.7 Maximum unilateral power gain as a
function of frequency.
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
MBB398
MBB409
10
8
handbook, halfpage
handbook, halfpage
V
F
(dB)
CE sat
(V)
6
1
4
2
−1
10
−2
10
0
10
−1
2
−1
2
1
10
10
10
1
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 10.
VCE = 10 V; ZS = ZL = 50 Ω; f = 100 MHz.
Fig.8 Collector-emitter saturation voltage as a
function of collector current.
Fig.9 Common emitter noise figure as a function
of collector current.
MBB410
MBB413
0
80
handbook, halfpage
handbook, halfpage
b
b
f = 1000 MHz
800
11
21
−10 mA
(mS)
(mS)
−5 mA
600
400
−20
−40
−60
−80
60
200
I
= −2 mA
E
40
20
0
I
= −2 mA
E
200
300
−5 mA
500
600
800
f = 1000 MHz
−10 mA
10
20
30
40
50
g
60
(mS)
0
g
10
(mS)
−50
−40
−30
−20
−10
11
21
VCB = 10 V.
VCB = 10 V.
Fig.10 Common base input admittance (Y11).
Fig.11 Common base forward admittance (Y21).
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
MBB412
MBB411
0
8
handbook, halfpage
handbook, halfpage
b
12
(mS)
b
22
(mS)
I
E =
−2 mA −5 mA
−0.5
−2 mA
−5 mA
I
= −10 mA
E
f = 1000 MHz
800
6
200
−10 mA
300
−1.0
500
600
4
2
600
500
−1.5
−2.0
−2.5
800
300
200
f = 1000 MHz
−0.3 −0.1
0
0
0.4
0.8
1.2
1.6
(mS)
−0.7
−0.5
g
(mS)
g
12
22
VCB = 10 V.
VCB = 10 V.
Fig.12 Common base reverse admittance (Y12).
Fig.13 Common base output admittance (Y22).
September 1995
6
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
50
25
100
10
250
3 GHz
50
+ j
10
25
100
250
0
∞
− j
40 MHz
250
10
100
25
MBB403
50
VCE = 10 V; IC = 15 mA; ZO = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
o
90
o
o
120
60
40 MHz
o
o
150
30
+ ϕ
− ϕ
20
16
8
4
2
o
o
0
180
3 GHz
o
o
30
150
o
o
60
120
o
MBB405
90
VCE = 10 V; IC = 15 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
7
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
o
90
o
o
120
60
3 GHz
o
o
150
30
+ ϕ
− ϕ
0.1 0.2
0.3
0.4 0.5
o
o
0
180
40 MHz
o
o
30
150
o
o
60
120
o
MBB406
90
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
50
25
100
10
250
+ j
− j
10
25
50
100
250
0
∞
40 MHz
250
10
3 GHz
100
25
MBB404
50
VCE = 10 V; IC = 15 mA; ZO = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
8
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
Table 1 Common base Y-parameters; VCB = 10 V; IE = −2 mA
Y11
Y21
Y12
Y22
f (MHz)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
69.0
60.4
45.0
34.3
27.7
24.0
21.5
20.0
18.6
18.3
17.8
−10.2
−20.6
−27.4
−26.4
−23.3
−20.4
−18.0
−15.6
−14.0
−12.8
−11.7
−68.0
−58.0
−39.1
−25.4
−17.2
−11.7
−7.8
12.3
25.6
34.5
34.0
31.1
27.6
25.0
22.6
20.2
18.7
17.1
−0.02
−0.06
−0.10
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.1
−0.3
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−2.2
−0.01
−0.08
0.19
0.29
0.37
0.45
0.53
0.60
0.69
0.82
0.95
0.3
0.7
1.4
1.9
2.5
3.0
3.6
4.2
4.7
5.3
5.9
100
200
300
400
500
600
700
800
900
1000
−5.3
−3.0
−1.3
−0.1
Table 2 Common base Y-parameters; VCB = 10 V; IE = −5 mA
Y11 Y21
Y12
Y22
f (MHz)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
132.6
96.3
54.7
37.5
29.2
25.3
22.0
20.3
18.7
17.8
17.3
−35.7
−62.0
−57.8
−46.9
−38.6
−32.8
−28.4
−25.2
−22.6
−20.7
−19.1
−130.5
−91.1
−46.0
−26.4
−16.6
−11.0
−6.3
38.8
67.9
64.7
53.8
45.8
39.8
35.0
31.4
27.6
25.2
23.0
−0.06
−0.20
−0.30
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.2
−0.5
−0.7
−0.8
−1.0
−1.3
−1.4
−1.6
−1.9
−2.1
−2.3
−0.06
0.21
0.38
0.47
0.58
0.63
0.71
0.80
0.88
1.01
1.15
0.4
0.8
1.4
2.0
2.5
3.1
3.6
4.2
4.7
5.3
6.0
100
200
300
400
500
600
700
800
900
1000
−3.3
−0.6
1.4
3.0
September 1995
9
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
Table 3 Common base Y-parameters; VCB = 10 V; IE = −10 mA
Y11
Y21
Y12
Y22
f (MHz)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
189.0
108.5
55.2
37.1
28.8
24.7
21.2
19.3
17.2
16.4
15.8
−79.6
−99.0
−76.2
−59.0
−47.6
−40.2
−35.0
−31.0
−27.5
−25.2
−23.0
−185.5
−101.4
−44.6
−24.3
−14.6
−8.6
83.0
105.4
82.8
65.7
54.4
46.7
40.8
36.2
31.1
28.3
25.5
−0.10
−0.30
−0.50
−0.50
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.3
−0.5
−0.7
−0.9
−1.0
−1.3
−1.5
−1.7
−1.9
−2.1
−2.3
−0.09
0.30
0.44
0.60
0.69
0.75
0.84
0.93
1.00
1.15
1.31
0.4
0.9
1.4
2.0
2.5
3.1
3.6
4.2
4.7
5.3
6.0
100
200
300
400
500
600
700
800
900
1000
−3.4
−0.2
2.6
4.6
6.0
Table 4 Common base Y-parameters; VCB = 10 V; IE = −15 mA
Y11 Y21
Y12
Y22
f (MHz)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
206.5
104.3
53.1
35.9
28.1
23.4
20.1
18.2
16.2
15.5
14.7
−113.8
−114.0
−81.1
−62.1
−50.0
−42.3
−36.4
−32.0
−28.2
−25.7
−23.5
−202.6
−96.4
−41.7
−22.0
−12.5
−6.1
−1.2
2.0
118.1
120.1
87.7
68.6
56.9
48.2
41.6
36.7
31.3
28.1
24.9
−0.20
−0.40
−0.50
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.3
−0.5
−0.7
−0.8
−1.1
−1.3
−1.5
−1.7
−1.9
−2.1
−2.3
0.2
0.4
0.6
0.7
0.8
0.8
0.9
1.0
1.1
1.3
1.4
0.5
0.9
1.4
2.0
2.5
3.1
3.6
4.2
4.7
5.3
5.9
100
200
300
400
500
600
700
800
900
1000
4.5
6.5
7.9
September 1995
10
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.18 SOT23.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
11
相关型号：
BF550
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners)
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