BGY205 [NXP]
UHF amplifier module; UHF放大器器模块
| 型号： | BGY205 |
| 厂家： | 
NXP |
| 描述： | UHF amplifier module |
| 文件： | 总11页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY205
UHF amplifier module
1996 May 21
Product specification
Supersedes data of May 1994
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
FEATURES
PINNING - SOT321B
PIN
• 6 V nominal supply voltage
DESCRIPTION
• 3.5 W pulsed output power
1
RF input
• Easy control of output power by DC voltage.
2
VC
3
4
VS
APPLICATIONS
RF output
ground
Flange
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY205 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
1
2
3
4
Top view
MSA489
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
f
VS
VC
PL
Gp
η
ZS; ZL
OPERATION
(MHz)
(V)
(V)
(W)
(dB)
(%)
(Ω)
Pulsed; δ = 1 : 8
880 to 915
6
≤4
3.5
≥32.5
≥40
50
1996 May 21
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
PARAMETER
MIN.
MAX.
8.5
UNIT
DC supply voltage
DC control voltage
input drive power
load power
−
−
−
−
V
V
VC
4.5
7
PD
mW
W
PL
4
Tstg
Tmb
storage temperature
−40
−30
+100
+100
°C
operating mounting base temperature
°C
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; VC ≤ 4 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; unless
otherwise specified.
SYMBOL
PARAMETER
leakage current
CONDITIONS
MIN.
TYP.
MAX.
100
UNIT
µA
IQ
IC
VC = 0.5 V
−
−
−
−
−
−
control current
load power
adjust VC for PL = 3.5 W
VC = 4 V
500
−
µA
W
PL
3.5
32.5
40
−
Gp
power gain
adjust VC for PL = 3.5 W
adjust VC for PL = 3.5 W
adjust VC for PL = 3.5 W
adjust VC for PL = 3.5 W
adjust VC for PL = 3.5 W
−
dB
%
η
efficiency
45
−
−
H2
second harmonic
third harmonic
input VSWR
stability
−40
−40
2 : 1
−60
dBc
dBc
H3
−
−
VSWRin
−
−
PD = 0 to 6 dBm; VS = 5 to 8.5 V;
VC = 0 to 4 V; PL ≤ 3.5 W;
−
−
dBc
VSWR ≤ 6 : 1 through all phases
isolation
VC = 0.5 V
−
1
−
−
−
−
−36
−
dBm
MHz
%
control bandwidth
AM-AM conversion
R1 = 0; C1 = 0; see Fig.16
PD with 3% AM; f = 100 kHz;
PL = 3.5 mW to 3.5 W
12
Pn
noise power
ruggedness
PL = 3.5 W; bandwidth = 30 kHz;
20 MHz above transmitter band
−
−
−85
dBm
VS = 8.5 V; adjust VC for PL = 3.5 W;
no degradation
VSWR ≤ 10 : 1 through all phases
1996 May 21
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG742
MBG741
40
40
handbook, halfpage
P
L
P
L
(dBm)
(dBm)
30
30
915 MHz
880 MHz
20
880 MHz
915 MHz
10
0
20
10
0
−10
−20
−20
−15
−10
−5
0
5
2.5
2.7
2.9
3.1
3.3
3.5
(V)
V
P
(dBm)
C
D
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 6 V; PL = 3.5 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2 Load power as a function of control voltage;
typical values.
Fig.3 Load power as a function of drive power;
typical values.
MBG740
MBG739
12
50
handbook, halfpage
handbook, halfpage
915 MHz
η
(%)
10
8
40
890 MHz
6
30
20
10
880 MHz
4
915 MHz
2
0
0
10
20
30
40
0
1
2
3
4
P
(dBm)
P
(W)
L
L
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; Tmb = 25 °C;
δ = 1 : 8; tp = 575 µs; input amplitude modulation = 3%.
Fig.4 Output amplitude modulation as a
Fig.5 Efficiency as a function of load power;
typical values.
function of load power; typical values.
1996 May 21
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG735
MBG736
5
5
handbook, halfpage
handbook, halfpage
V
P
C
L
(V)
4
(W)
4
3
2
3
2
1
1
0
0
880
890
900
910
920
880
890
900
910
920
f (MHz)
f (MHz)
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
PL = 3.5 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
VC = 4 V; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.6 Load power as a function of frequency;
typical values.
Fig.7 Control voltage as a function of
frequency; typical values.
MBG738
MBG734
30
10
handbook, halfpage
H
, H
2
3
phase
(deg)
(dBc)
40
−10
−30
−50
−70
H
H
2
3
50
60
70
80
880
890
900
910
920
0
1
2
3
f (MHz)
f (MHz)
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
ZS = ZL= 50 Ω; PD = 3 dBm; VS = 6 V; PL = 15 to 35.4 dBm;
PL = 3.5 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Fig.8 Harmonics as a function of
frequency; typical values.
Fig.9 Control loop phase as a function of
frequency on the control pin; typical values.
1996 May 21
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG730
MBG731
25
25
handbook, halfpage
handbook, halfpage
G
v
G
v
20
20
915 MHz
915 MHz
15
10
15
10
880 MHz
880 MHz
5
0
5
0
0
0
1
2
3
4
1
2
3
4
f (MHz)
f (MHz)
PL = 25 dBm.
PL = 30 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Fig.10 Control loop voltage gain as a function of
frequency on the control pin; typical values.
Fig.11 Control loop voltage gain as a function of
frequency on the control pin; typical values.
MBG729
MBG728
25
25
handbook, halfpage
handbook, halfpage
G
v
G
v
20
20
915 MHz
15
15
915 MHz
880 MHz
10
10
880 MHz
5
0
5
0
0
1
2
3
4
0
1
2
3
4
f (MHz)
f (MHz)
PL = 20 dBm.
PL = 15 dBm.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; R1 = 0; C1 = 0.
Fig.12 Control loop voltage gain as a function of
frequency on the control pin; typical values.
Fig.13 Control loop voltage gain as a function of
frequency on the control pin; typical values.
1996 May 21
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG732
MBG733
4
4
handbook, halfpage
handbook, halfpage
V
C
(V)
V
C
(V)
3.5
3.5
P
= 35.4 dBm
L
P
= 35.4 dBm
L
3
2.5
2
3
30 dBm
20 dBm
10 dBm
30 dBm
20 dBm
10 dBm
2.5
2
−40
o
o
−40
0
40
80
0
40
80
T
( C)
T
( C)
mb
mb
f = 880 MHz.
f = 915 MHz.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; PD = 3 dBm; VS = 6 V; δ = 1 : 8; tp = 575 µs.
Fig.14 Control voltage as a function of mounting
base temperature; typical values.
Fig.15 Control voltage as a function of mounting
base temperature; typical values.
C2
C1
R1
L1
Z
Z
2
1
C3
C4
typ.
1.35 A
RF
input
V
V
RF
output
C
S
MBG743
Fig.16 Test circuit.
7
1996 May 21
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
90
1
2
3
4
50 Ω
input
50 Ω
output
60
MSA915
V
V
S
C
Dimensions in mm.
Fig.17 Printed-circuit board layout.
List of components (see Fig.16)
COMPONENT
DESCRIPTION
multilayer ceramic chip capacitor
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2
C3
680 pF
2222 851 11681
−
tantalum capacitor
electrolytic capacitor
Grade 4S2 Ferroxcube bead
stripline; note 1
2.2 µF; 35 V
47 µF; 40 V
C4
2222 030 37479
4330 030 36300
width = 2.33 mm −
L1
Z1, Z2
R1
50 Ω
metal film resistor
100 Ω; 0.6 W
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness
1
⁄
32 inch.
1996 May 21
8
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MLB740
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
equal to 210 °C.
T
mb
o
( C)
Solder dots or solder prints must be large enough to wet
the contact areas.
200
100
Footprints for soldering should cover the module contact
area +0.1 mm on all sides.
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these ovens.
Hand soldering must be avoided because the soldering
iron tip can exceed the maximum permitted temperature of
250 °C and damage the module.
0
0
100
200
300
400
t (s)
The maximum temperature profile and soldering time is
indicated as follows (see Fig.18):
t = 350 s at 100 °C
Fig.18 Maximum allowable temperature profile.
t = 300 s at 125 °C
t = 200 s at 150 °C
t = 100 s at 175 °C
t = 50 s at 200 °C
t = 5 s at 250 °C (maximum temperature).
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Triclean B/S
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1996 May 21
9
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
PACKAGE OUTLINE
25.0
24.6
1.65
1.25
22.1
21.7
3.0
2.6
4.3
3.9
3.1
2.9
(4×)
5.1
4.9
13.4
13.0
2.4
2.2
MSA397
1.2
min
1
2
3
4
0.55
0.45
(4×)
0.30
0.20
0.25
M
0.1
3.7
3.3
(4×)
5.08
7.62
5.08
Dimensions in mm.
Fig.19 SOT321B.
1996 May 21
10
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 21
11
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