BGY212A [NXP]
UHF amplifier module; UHF放大器器模块型号: | BGY212A |
厂家: | NXP |
描述: | UHF amplifier module |
文件: | 总11页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGY212A
UHF amplifier module
Preliminary specification
1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
FEATURES
PINNING - SOT482C
PIN
• 3.5 V nominal supply voltage
• 2 W output power
DESCRIPTION
1
2
3
4
5
RF input
VC
• Easy output power control by DC voltage.
VS
APPLICATIONS
RF output
ground
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
DESCRIPTION
ook, halfpage
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
5
4
3
2
1
Bottom view
MBK201
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
VS
(V)
VC
(V)
PL
(dBm)
Gp
(dB)
η
(%)
ZS, ZL
(Ω)
(MHz)
Pulsed; δ = 1 : 8
1710 to 1785
3.5
≤2.2
typ. 33
typ. 33
typ. 40
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
VC < 0.2 V; PD = 0 mW
VC ≥ 0.2 V
MIN.
MAX.
UNIT
−
−
−
−
−
7
V
4.1
V
VC
DC control voltage
2.7
V
PD
input drive power
10
dBm
dBm
°C
°C
PL
load power
34.1
+100
+100
Tstg
Tmb
storage temperature
operating mounting base temperature
−40
−30
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.5 V; VC ≤ 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unles
otherwise specified.
SYMBOL
IQ
PARAMETER
leakage current
CONDITIONS
MIN.
TYP.
MAX.
10
UNIT
µA
VC = 0.2 V
−
−
−
−
−
5
−
VC = 0.2 V; VS = 7 V
adjust VC for PL = 32 dBm
VC = 2.2 V; VS = 3.5 V
VC = 2.2 V; VS = 3.2 V
VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C
PL = 32 dBm
20
3
mA
mA
dBm
dBm
dBm
dB
ICM
PL
peak control current
load power
33.2
32.3
31.8
32
−
32
31
−
−
−
Gp
power gain
efficiency
−
η
PL = 32 dBm
−
40
−
%
H2
second harmonic
third harmonic
input VSWR
stability
PL = 32 dBm
−
−
−35
−40
3 : 1
−60
dBc
dBc
H3
PL = 32 dBm
−
−
VSWRin
PL = 2 to 32 dBm
−
VS = 3.2 to 4.1 V; PD = −3 to 3 dBm;
VC = 0 to 2.2 V; PL ≤ 33 dBm;
−
−
dBc
VSWR ≤ 8 : 1 through all phases
isolation
VC = 0.2 V; PD = 3 dBm
−
−36
−
−33
−
dBm
MHz
dBm
control bandwidth
noise power
tbd
−
Pn
PL = 2 to 32 dBm;
−73
−71
bandwidth = 100 kHz; 20 MHz above
transmission band
AM/AM conversion
AM/PM conversion
control slope
PD with 3% AM; f = 100 kHz;
PL = 2 to 32 dBm
−
−
5
8
%
PD = −0.5 to 0.5 dBm;
PL = 2 to 32 dBm
−
tbd
deg/dB
PL = −8 to +2 dBm
−
−
−
tbd
tbd
28
−
dB / V
dB / V
dB
PL = 2 to 32 dBm
−
TX / RX conversion
carrier rise time
carrier fall time
ruggedness
PL = 32 dBm; f = 1785 MHz
PL (1805 MHz) / PD (1765 MHz)
30
tr
tf
PL = 2 to 32 dBm; time to settle
within −0.5 dB of final PL
−
−
1.5
1.5
2
2
µs
µs
PL = 2 to 32 dBm; time to fall below
− 33 dBm
VS = 4.1 V; adjust VC for
PL = 33 dBm; VSWR ≤ 8 : 1 through
all phases
no degradation
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
3
PL
4
PL
(W)
(W)
1710MHz
1785MHz
1710MHz
1785MHz
3
2
1
0
2
1
0
1
1.5
2
2.5
2
3
4
5
VC (V)
VS (V)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VC = 2.2 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2 Load power as a function of control voltage;
typical values.
Fig.3 Load power as a function of supply voltage;
typical values.
50
η
(%)
3
PL
(W)
1785MHz
40
1710MHz
2
1
0
30
20
10
0
0
0.5
1
1.5
2
2.5
1700
1750
1800
f (MHz)
PL (W)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
mb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm; VC = 2.2 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
T
Fig.4 Efficiency as a function of load power;
typical values.
Fig.5 Load power as a function of frequency;
typical values.
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
0
H2, H3
(dBc)
4
VSWRIN
-20
-40
-60
-80
3
H2
1710MHz
H3
2
1785MHz
1
1700
1750
1800
f (MHz)
0
1
2
3
PL (W)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm; PL = 1.6 W;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs
Fig.6 Input VSWR as a function of load power;
typical values.
Fig.7 Harmonics as a function of
frequency; typical values.
16
3
PL
(W)
output
AM
(%)
12
1710MHz
(1)
2
(2)
(3)
1785MHz
8
(4)
1
0
4
0
-20
0
20
40
PL (dBm)
0
20
40
60
80
Tmb (°C)
100
ZS = ZL = 50 Ω; PD = 0 dBm; VC = 2.2 V; δ = 1 : 8; tp = 575 µs.
(1) VS = 3.5 V; f = 1710 MHz.
(2)
VS = 3.5 V; f = 1785 MHz.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm; Tmb = 25 °C;
(3) VS = 3.2 V; f = 1710 MHz.
(4) VS = 3.2 V; f = 1785 MHz.
∆f = 100 kHz; input amplitude modulation = 3%; δ = 1 : 8; tp = 575 µs.
Fig.8 Load power as a function of mounting
base temperature; typical values.
Fig.9 Output amplitude modulation as a
function of load power; typical values.
1999 Aug 23
5
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.11 Test circuit
List of components (See Fig 10)
COMPONENT
C1
DESCRIPTION
multilayer ceramic chip capacitor
VALUE
DIMENSIONS
CATALOGUE NO.
680 pF
2222 851 11681
2222 910 16549
2222 030 37479
−
C2
multilayer ceramic chip capacitor
electrolytic capacitor
stripline; note 1
100 nF
C3
47 µF; 40 V
50 Ω
Z1, Z2
R1
width 2.3 mm
metal film resistor
100 Ω; 0.6 W
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);
thickness 1⁄32 inch.
1999 Aug 23
6
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MGM159
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
equal to 210 °C.
T
(°C)
Solder dots or solder prints must be large enough to wet
the contact areas.
200
100
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these ovens.
A double reflow process is permitted.
Hand soldering is not recommended because the
soldering iron tip can exceed the maximum permitted
temperature of 250 °C and damage the module.
In case handsoldering is needed, recommendations can
be found in RNR-45-98-A-0485.
0
0
1
2
3
4
5
t (min)
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
Fig.12 Recommended reflow temperature profile.
The maximum ramp-up is 10 °C per second.
The maximum cool-down is 5 °C per second.
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1999 Aug 23
7
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
4.400
4.000
3.200
4.000
2.800
1.800
0
2.5 mm
scale
0.500
0.600
1.000
1.400
1.300
1.900
0.450
1.000
MGS345
0.050
0.900
0.900
1.200
1.000
0.600
2.300
3.700
1.300
Solder land
3.150
3.900
Solder paste
Green tape area,
max. height 0.03 mm
Dimensions in mm.
Fig.13 Footprint SOT482C.
8
1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
PACKAGE OUTLINE
Leadless surface mounted package; plastic cap; 4 terminations
SOT482C
e
e
e
d
b
1
b
b
b
2
b
1
2
3
(4×)
b
3
L
1
2
3
4
L
L
1
2
D
D
1
A
c
5
E
E
1
pin 1 index
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
b
c
D
D
E
E
1
e
e
L
L
L
2
d
1
2
3
1
1
1
1.90
1.59
1.9
1.7
1.4
1.2
0.8
0.6
0.6
0.4
0.70
0.57
13.7 13.35
13.3 13.05
8.2
7.8
7.85
7.55
2.6
2.4
4.6
4.4
1.15
0.85
2.65
2.35
3.85
3.55
mm
2.0
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-05-18
99-08-16
SOT482C
1999 Aug 23
9
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23
10
Philips Semiconductors – a worldwide company
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© Philips Electronics N.V.
1999
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp11
Date of release: 1999 Aug 23
Document order number: 9397 750 06248
相关型号:
BGY240
RF/Microwave Amplifier, 890 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT388C, 4 PIN
NXP
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