BGY212A [NXP]

UHF amplifier module; UHF放大器器模块
BGY212A
型号: BGY212A
厂家: NXP    NXP
描述:

UHF amplifier module
UHF放大器器模块

射频和微波 射频放大器 微波放大器 高功率电源
文件: 总11页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BGY212A  
UHF amplifier module  
Preliminary specification  
1999 Aug 23  
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
FEATURES  
PINNING - SOT482C  
PIN  
3.5 V nominal supply voltage  
2 W output power  
DESCRIPTION  
1
2
3
4
5
RF input  
VC  
Easy output power control by DC voltage.  
VS  
APPLICATIONS  
RF output  
ground  
Digital cellular radio systems with Time Division Multiple  
Access (TDMA) operation (GSM systems) in the  
1710 to 1785 MHz frequency range.  
DESCRIPTION  
ook, halfpage  
The BGY212A is a three-stage UHF amplifier module in a  
SOT482C leadless package with a plastic cover. The  
module consists of one NPN silicon planar transistor die  
and one bipolar monolithic integrated circuit mounted  
together with matching and bias circuit components on a  
metallized ceramic substrate.  
5
4
3
2
1
Bottom view  
MBK201  
Fig.1 Simplified outline  
QUICK REFERENCE DATA  
RF performance at Tmb = 25 °C.  
MODE OF  
OPERATION  
f
VS  
(V)  
VC  
(V)  
PL  
(dBm)  
Gp  
(dB)  
η
(%)  
ZS, ZL  
()  
(MHz)  
Pulsed; δ = 1 : 8  
1710 to 1785  
3.5  
2.2  
typ. 33  
typ. 33  
typ. 40  
50  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
CONDITIONS  
VC < 0.2 V; PD = 0 mW  
VC 0.2 V  
MIN.  
MAX.  
UNIT  
7
V
4.1  
V
VC  
DC control voltage  
2.7  
V
PD  
input drive power  
10  
dBm  
dBm  
°C  
°C  
PL  
load power  
34.1  
+100  
+100  
Tstg  
Tmb  
storage temperature  
operating mounting base temperature  
40  
30  
CAUTION  
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport  
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.  
1999 Aug 23  
2
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
CHARACTERISTICS  
ZS = ZL = 50 ; PD = 0 dBm; VS = 3.5 V; VC 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unles  
otherwise specified.  
SYMBOL  
IQ  
PARAMETER  
leakage current  
CONDITIONS  
MIN.  
TYP.  
MAX.  
10  
UNIT  
µA  
VC = 0.2 V  
5
VC = 0.2 V; VS = 7 V  
adjust VC for PL = 32 dBm  
VC = 2.2 V; VS = 3.5 V  
VC = 2.2 V; VS = 3.2 V  
VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C  
PL = 32 dBm  
20  
3
mA  
mA  
dBm  
dBm  
dBm  
dB  
ICM  
PL  
peak control current  
load power  
33.2  
32.3  
31.8  
32  
32  
31  
Gp  
power gain  
efficiency  
η
PL = 32 dBm  
40  
%
H2  
second harmonic  
third harmonic  
input VSWR  
stability  
PL = 32 dBm  
35  
40  
3 : 1  
60  
dBc  
dBc  
H3  
PL = 32 dBm  
VSWRin  
PL = 2 to 32 dBm  
VS = 3.2 to 4.1 V; PD = 3 to 3 dBm;  
VC = 0 to 2.2 V; PL 33 dBm;  
dBc  
VSWR 8 : 1 through all phases  
isolation  
VC = 0.2 V; PD = 3 dBm  
36  
33  
dBm  
MHz  
dBm  
control bandwidth  
noise power  
tbd  
Pn  
PL = 2 to 32 dBm;  
73  
71  
bandwidth = 100 kHz; 20 MHz above  
transmission band  
AM/AM conversion  
AM/PM conversion  
control slope  
PD with 3% AM; f = 100 kHz;  
PL = 2 to 32 dBm  
5
8
%
PD = 0.5 to 0.5 dBm;  
PL = 2 to 32 dBm  
tbd  
deg/dB  
PL = 8 to +2 dBm  
tbd  
tbd  
28  
dB / V  
dB / V  
dB  
PL = 2 to 32 dBm  
TX / RX conversion  
carrier rise time  
carrier fall time  
ruggedness  
PL = 32 dBm; f = 1785 MHz  
PL (1805 MHz) / PD (1765 MHz)  
30  
tr  
tf  
PL = 2 to 32 dBm; time to settle  
within 0.5 dB of final PL  
1.5  
1.5  
2
2
µs  
µs  
PL = 2 to 32 dBm; time to fall below  
33 dBm  
VS = 4.1 V; adjust VC for  
PL = 33 dBm; VSWR 8 : 1 through  
all phases  
no degradation  
1999 Aug 23  
3
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
3
PL  
4
PL  
(W)  
(W)  
1710MHz  
1785MHz  
1710MHz  
1785MHz  
3
2
1
0
2
1
0
1
1.5  
2
2.5  
2
3
4
5
VC (V)  
VS (V)  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.  
ZS = ZL = 50 ; VC = 2.2 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.  
Fig.2 Load power as a function of control voltage;  
typical values.  
Fig.3 Load power as a function of supply voltage;  
typical values.  
50  
η
(%)  
3
PL  
(W)  
1785MHz  
40  
1710MHz  
2
1
0
30  
20  
10  
0
0
0.5  
1
1.5  
2
2.5  
1700  
1750  
1800  
f (MHz)  
PL (W)  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm;  
mb = 25 °C; δ = 1 : 8; tp = 575 µs.  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm; VC = 2.2 V;  
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.  
T
Fig.4 Efficiency as a function of load power;  
typical values.  
Fig.5 Load power as a function of frequency;  
typical values.  
1999 Aug 23  
4
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
0
H2, H3  
(dBc)  
4
VSWRIN  
-20  
-40  
-60  
-80  
3
H2  
1710MHz  
H3  
2
1785MHz  
1
1700  
1750  
1800  
f (MHz)  
0
1
2
3
PL (W)  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm; PL = 1.6 W;  
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs  
Fig.6 Input VSWR as a function of load power;  
typical values.  
Fig.7 Harmonics as a function of  
frequency; typical values.  
16  
3
PL  
(W)  
output  
AM  
(%)  
12  
1710MHz  
(1)  
2
(2)  
(3)  
1785MHz  
8
(4)  
1
0
4
0
-20  
0
20  
40  
PL (dBm)  
0
20  
40  
60  
80  
Tmb (°C)  
100  
ZS = ZL = 50 ; PD = 0 dBm; VC = 2.2 V; δ = 1 : 8; tp = 575 µs.  
(1) VS = 3.5 V; f = 1710 MHz.  
(2)  
VS = 3.5 V; f = 1785 MHz.  
ZS = ZL = 50 ; VS = 3.5 V; PD = 0 dBm; Tmb = 25 °C;  
(3) VS = 3.2 V; f = 1710 MHz.  
(4) VS = 3.2 V; f = 1785 MHz.  
f = 100 kHz; input amplitude modulation = 3%; δ = 1 : 8; tp = 575 µs.  
Fig.8 Load power as a function of mounting  
base temperature; typical values.  
Fig.9 Output amplitude modulation as a  
function of load power; typical values.  
1999 Aug 23  
5
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
Fig.11 Test circuit  
List of components (See Fig 10)  
COMPONENT  
C1  
DESCRIPTION  
multilayer ceramic chip capacitor  
VALUE  
DIMENSIONS  
CATALOGUE NO.  
680 pF  
2222 851 11681  
2222 910 16549  
2222 030 37479  
C2  
multilayer ceramic chip capacitor  
electrolytic capacitor  
stripline; note 1  
100 nF  
C3  
47 µF; 40 V  
50 Ω  
Z1, Z2  
R1  
width 2.3 mm  
metal film resistor  
100 ; 0.6 W  
2322 156 11001  
Note  
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);  
thickness 132 inch.  
1999 Aug 23  
6
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
SOLDERING  
The indicated temperatures are those at the solder  
interfaces.  
MGM159  
300  
handbook, halfpage  
Advised solder types are types with a liquidus less than or  
equal to 210 °C.  
T
(°C)  
Solder dots or solder prints must be large enough to wet  
the contact areas.  
200  
100  
Soldering can be carried out using a conveyor oven, a hot  
air oven, an infrared oven or a combination of these ovens.  
A double reflow process is permitted.  
Hand soldering is not recommended because the  
soldering iron tip can exceed the maximum permitted  
temperature of 250 °C and damage the module.  
In case handsoldering is needed, recommendations can  
be found in RNR-45-98-A-0485.  
0
0
1
2
3
4
5
t (min)  
The maximum allowed temperature is 250 °C for a  
maximum of 5 seconds.  
Fig.12 Recommended reflow temperature profile.  
The maximum ramp-up is 10 °C per second.  
The maximum cool-down is 5 °C per second.  
Cleaning  
The following fluids may be used for cleaning:  
Alcohol  
Bio-Act (Terpene Hydrocarbon)  
Acetone.  
Ultrasonic cleaning should not be used since this can  
cause serious damage to the product.  
1999 Aug 23  
7
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
4.400  
4.000  
3.200  
4.000  
2.800  
1.800  
0
2.5 mm  
scale  
0.500  
0.600  
1.000  
1.400  
1.300  
1.900  
0.450  
1.000  
MGS345  
0.050  
0.900  
0.900  
1.200  
1.000  
0.600  
2.300  
3.700  
1.300  
Solder land  
3.150  
3.900  
Solder paste  
Green tape area,  
max. height 0.03 mm  
Dimensions in mm.  
Fig.13 Footprint SOT482C.  
8
1999 Aug 23  
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
PACKAGE OUTLINE  
Leadless surface mounted package; plastic cap; 4 terminations  
SOT482C  
e
e
e
d
b
1
b
b
b
2
b
1
2
3
(4×)  
b
3
L
1
2
3
4
L
L
1
2
D
D
1
A
c
5
E
E
1
pin 1 index  
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
b
b
b
b
c
D
D
E
E
1
e
e
L
L
L
2
d
1
2
3
1
1
1
1.90  
1.59  
1.9  
1.7  
1.4  
1.2  
0.8  
0.6  
0.6  
0.4  
0.70  
0.57  
13.7 13.35  
13.3 13.05  
8.2  
7.8  
7.85  
7.55  
2.6  
2.4  
4.6  
4.4  
1.15  
0.85  
2.65  
2.35  
3.85  
3.55  
mm  
2.0  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
99-05-18  
99-08-16  
SOT482C  
1999 Aug 23  
9
Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY212A  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Aug 23  
10  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,  
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 68 9211, Fax. +359 2 68 9102  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
Czech Republic: see Austria  
Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
Tel. +27 11 471 5401, Fax. +27 11 471 5398  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615 800, Fax. +358 9 6158 0920  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
Tel. +39 039 203 6838, Fax +39 039 203 6800  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V.  
1999  
SCA 67  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
budgetnum/printrun/ed/pp11  
Date of release: 1999 Aug 23  
Document order number: 9397 750 06248  

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