BLF188XRSU [NXP]
BLF188XRS;
| 型号： | BLF188XRSU |
| 厂家： | 
NXP |
| 描述： | BLF188XRS |
| 文件： | 总15页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF188XR; BLF188XRS
Power LDMOS transistor
Rev. 5 — 12 November 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
Test signal
f
VDS
(V)
50
50
50
48
50
50
50
50
50
50
50
50
50
PL
Gp
D
(%)
75
(MHz)
2 to 30
27
(W)
(dB)
29.0
23.7
22.0
22.0
23.1
27.1
22.5
26.5
19.3
25.8
25.4
24.0
23.8
CW
1270
1400
1200
1240
1350
1200
1320
1200
1288
1200
1400
1400
225
73
41
82
60
77
72.5
81.4
88 to 108
108
83
77.8
85
83
200
68.3
85
pulsed RF
DVB-T
81.4
81.4
108
81
73
174 to 230
29
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF188XR (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
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BLF188XRS (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
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[1] Connected to flange.
3. Ordering information
Table 3.
Type number Package
Name Description
Ordering information
Version
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
earless flanged balanced ceramic package; 4 leads SOT539B
BLF188XR
-
-
BLF188XRS
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
135
+11
VGS
Tstg
6
65
-
V
+150 C
225 C
[1]
Tj
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
2 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tj = 150 C
Typ
Unit
[1][2]
[3]
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
0.10 K/W
0.03 K/W
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
to case
= 20 %
[1] Tj is the junction temperature.
[2] th(j-c) is measured under RF conditions.
R
[3] See Figure 1.
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(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 5.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
135
-
-
V
VGS(th)
VGSq
gate-source threshold voltage VDS = 10 V; ID = 550 mA 1.25
1.9
1.5
2.25
1.88
V
V
gate-source quiescent voltage VDS = 50 V; ID = 20 mA
0.68
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
3 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
IDSS drain leakage current
IDSX
Min
Typ
-
Max
2.8
-
Unit
A
A
VGS = 0 V; VDS = 50 V
-
-
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
77
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
280
-
nA
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 19.25 A
0.08
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ Max Unit
Crs
-
-
-
6.2
-
-
-
pF
pF
pF
Ciss
Coss
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
582
212
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 10 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions
PL = 1400 W
PL = 1400 W
PL = 1400 W
Min
23.2
-
Typ
24.4
21
73
Max
Unit
power gain
-
dB
dB
%
RLin
D
input return loss
drain efficiency
14
69
-
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VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
4 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF188XR and BLF188XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
DS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.
7.2 Impedance information
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Fig 3. Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f
Zi
ZL
(MHz)
108
()
()
2.94 j9.64
2.74 + j0.57
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS
(A)
35
40
45
50
EAS
(J)
4.5
3.4
2.4
2.0
For information see application note “AN10273”.
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
5 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
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Fig 4. Non-repetitive avalanche energy as a function of single pulse avalanche current,
typical values
7.4 Test circuit
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Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m, gold plated.
See Table 11 for a list of components.
Fig 5. Component layout for class-AB production test circuit
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
6 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
Table 11. List of components
For test circuit see Figure 5.
Component
Description
Value
Remarks
[1]
C1, C2, C6,
C7, C16, C17,
C23, C24
multilayer ceramic chip capacitor 1000 pF
[2]
[1]
[1]
C3
C4
C5
multilayer ceramic chip capacitor 47 pF
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 200 pF
multilayer ceramic chip capacitor 4.7 F, 100 V
C8, C9, C14,
C15
TDK
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C10, C11
C12, C13
C18, C19
C20
electrolytic capacitor
electrolytic capacitor
2200 F, 63 V
470 F, 63 V
[1]
[1]
[1]
[1]
multilayer ceramic chip capacitor 120 pF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 120 pF
multilayer ceramic chip capacitor 56 pF
C21
C22
L1, L2, L3, L4 1.5 turn 0.8 mm copper wire
D = 3.2 mm,
length = 1.6 mm
L5, L6
L7, L8
5.0 turn 0.8 mm copper wire
2.5 turn 0.8 mm copper wire
D = 3.0 mm,
length = 4 mm
D = 3.0 mm,
length = 2.4 mm
R1, R2
T1
resistor
9.1
SMD 1206
semi rigid coax
25 ,
Micro-Coax UT-090C-25
length = 160 mm
T2
semi rigid coax
25 ,
Micro-Coax UT-141C-25
length = 160 mm
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
7 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
7.5 Graphical data
The following figures are measured in a class-AB production test circuit.
7.5.1 1-Tone CW pulsed
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= 20 %.
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 61.58 dBm (1440 W)
(2) L(3dB) = 61.98 dBm (1580 W)
P
Fig 6. Power gain and drain efficiency as function of
output power; typical values
Fig 7. Output power as a function of input power;
typical values
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
8 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
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VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
(2) Dq = 40 mA
V
DS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
(2) Dq = 40 mA
I
I
(3) IDq = 80 mA
(4) IDq = 160 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
Fig 8. Power gain as a function of output power;
typical values
Fig 9. Drain efficiency as a function of output power;
typical values
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IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 25 V
(2) DS = 30 V
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 25 V
(2) DS = 30 V
V
V
(3) VDS = 35 V
(4) VDS = 40 V
(3) VDS = 35 V
(4) VDS = 40 V
(5)
V
DS = 45 V
(5) VDS = 45 V
(6) VDS = 50 V
(6) VDS = 50 V
Fig 10. Power gain as a function of output power;
typical values
Fig 11. Drain efficiency as a function of output power;
typical values
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
9 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
8. Package outline
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Fig 12. Package outline SOT539A
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
10 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
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Fig 13. Package outline SOT539B
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
11 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 12. Abbreviations
Acronym
CW
Description
Continuous Wave
DVB-T
ESD
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
HF
High Frequency
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
SMD
Surface Mounted Device
UIS
Unclamped Inductive Switching
Voltage Standing-Wave Ratio
VSWR
11. Revision history
Table 13. Revision history
Document ID
Release date Data sheet status
20131112 Product data sheet
• Section 7.3 on page 5: section added
Change notice Supersedes
BLF188XR_BLF188XRS v.5
Modifications
- BLF188XR_BLF188XRS v.4
BLF188XR_BLF188XRS v.4
BLF188XR_BLF188XRS v.3
BLF188XR_BLF188XRS v.2
BLF188XR_BLF188XRS v.1
20131030
20130801
20130712
20130506
Product data sheet
Objective data sheet
Objective data sheet
Objective data sheet
-
-
-
-
BLF188XR_BLF188XRS v.3
BLF188XR_BLF188XRS v.2
BLF188XR_BLF188XRS v.1
-
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
12 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
13 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
non-automotive qualified products in automotive equipment or applications.
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF188XR_BLF188XRS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
14 of 15
BLF188XR; BLF188XRS
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Ruggedness in class-AB operation . . . . . . . . . 5
Impedance information. . . . . . . . . . . . . . . . . . . 5
UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 8
7.1
7.2
7.3
7.4
7.5
7.5.1
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
12.5
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2013
Document identifier: BLF188XR_BLF188XRS
相关型号：
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