BLF202,115 [NXP]
BLF202;
| 型号： | BLF202,115 |
| 厂家： | 
NXP |
| 描述： | BLF202 放大器 CD 晶体管 |
| 文件： | 总14页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF202
HF/VHF power MOS transistor
Product specification
2003 Sep 19
Supersedes data of 1999 Oct 20
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
FEATURES
PINNING - SOT409A
PIN
• High power gain
DESCRIPTION
• Easy power control
• Gold metallization
1, 8
2, 3
4, 5
6, 7
source
gate
• Good thermal stability
• Withstands full load mismatch.
source
drain
APPLICATIONS
• Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
8
5
handbook, halfpage
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
175
12.5
2
>10
>50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2003 Sep 19
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
40
V
VGS
ID
gate-source voltage
drain current (DC)
−
±20
1
V
−
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tmb ≤ 85 °C
−
5.7
150
200
W
°C
°C
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
20.5
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
T
mb ≤ 85 °C; Ptot = 5.7 W
K/W
MCD789
10
handbook, halfpage
I
D
(A)
1
(1)
(2)
−1
−2
10
10
2
1
10
10
V
(V)
DS
(1) Current is this area may be limited by RDSon
.
(2) Tmb = 85 °C.
Fig.2 DC SOAR.
2003 Sep 19
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
ID = 3 mA; VGS = 0
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
40
2
−
−
V
VGSth
IDSS
IGSS
IDSX
RDSon
gfs
ID = 3 mA; VDS = 10 V
−
4.5
10
1
V
VGS = 0; VDS = 12.5 V
−
−
µA
µA
A
VGS = ±20 V; VDS = 0
−
−
VGS = 15 V; VDS = 10 V
ID = 0.3 A; VGS = 15 V
−
1.3
3.5
135
5.3
7.8
1.8
−
drain-source on-state resistance
forward transconductance
input capacitance
−
4
Ω
ID = 0.3 A; VDS = 10 V
80
−
−
mS
pF
pF
pF
Cis
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
VGS group indicator
GROUP
LIMITS
(V)
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
3.3
MAX.
A
B
C
D
E
F
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
G
H
J
U
V
W
X
Y
Z
K
L
M
N
2003 Sep 19
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP111
MGP112
15
1600
handbook, halfpage
handbook, halfpage
I
T.C.
D
(mV/K)
(mA)
10
5
1200
800
400
0
−5
0
0
2
3
1
10
10
10
4
8
12
16
20
(V)
I
(mA)
D
V
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.3 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.4 Drain current as a function of gate-source
voltage; typical values.
MGP113
MGP114
5
30
handbook, halfpage
handbook, halfpage
R
DSon
C
(Ω)
(pF)
4
20
3
2
C
os
10
C
is
1
0
0
0
40
80
120
160
0
4
8
12
16
V
(V)
T (°C)
DS
j
VGS = 15 V; ID = 0.3 A.
VGS = 0; f = 1 MHz.
Fig.5 Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.6 Input and output capacitance as functions
of drain-source voltage; typical values.
2003 Sep 19
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP115
5
handbook, halfpage
C
rs
(pF)
4
3
2
1
0
0
4
8
12
16
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.7 Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C; RGS = 237 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
CW, class-B
175
12.5
20
2
>10
>50
typ. 13
typ. 55
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
2003 Sep 19
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP116
MGP117
20
100
4
handbook, halfpage
handbook, halfpage
G
η
p
D
P
L
(W)
(dB)
16
(%)
80
G
p
3
60
40
12
η
D
2
1
8
4
0
20
0
0
0
1
1.5
2
2.5
3
3.5
0.2
0.4
0.6
0.8
P
(W)
P
(W)
IN
L
Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz.
Fig.8 Power gain and efficiency as a functions of
load power; typical values.
Fig.9 Load power as a function of input power;
typical values.
C10
C8
C11
L3
D.U.T.
L4
50 Ω
C1
L2
output
L1
50 Ω
input
C9
L5
C5
C6
C2
R6
R1
R2
C3
C4
L6
+V
C7
D
R3
R5
MGP118
R4
f = 175 MHz.
Fig.10 Test circuit for class-B operation.
7
2003 Sep 19
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
List of components (see Fig.10)
COMPONENT
C1, C11
DESCRIPTION
film dielectric trimmer
VALUE
DIMENSIONS
CATALOGUE NO.
2 to 9 pF
2222 809 09005
2222 809 09002
C2, C9
C3, C5
film dielectric trimmer
2 to 9 pF
multilayer ceramic chip capacitor;
note 1
1 nF; 500 V
C4, C6
multilayer ceramic chip capacitor
2 × 100 nF
in parallel,
50 V
2222 852 47104
C7
C8
C10
L1
Sprague electrolytic tantalum
capacitor
2.2 µF; 35 V
5.1 pF; 500 V
9.1 pF; 500 V
137 nH
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
8 turns enamelled 0.8 mm copper
wire
length 5.1 mm;
int. dia. 4 mm;
leads 2 × 5 mm
L2, L3
L4
stripline; note 2
81 Ω
8 mm × 2 mm
3 turns enamelled 1 mm copper wire 57 nH
9 turns enamelled 1 mm copper wire 355 nH
grade 3B Ferroxcube RF choke
length 5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L5
length 11 mm;
int. dia. 7 mm;
leads 2 × 5 mm
L6
4312 020 36642
2322 151 72371
2322 151 71002
2322 151 71005
R1
R2
R3
R4
R5
R6
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
237 Ω
1 kΩ
1 MΩ
5 kΩ
7.5 kΩ
10 Ω
2322 151 77502
2322 153 51009
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness
1.6 mm.
2003 Sep 19
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP119
MGP120
250
50
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
40
R
X
125
L
30
20
10
r
i
0
L
x
i
−125
0
0
0
50
100
150
200
50
100
150
200
f (MHz)
f (MHz)
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
RGS = 237 Ω; PL = 2 W.
Fig.11 Input impedance as a function of frequency
(series of components); typical values.
Fig.12 Load impedance as a function of frequency
(series components); typical values.
MGP121
20
handbook, halfpage
G
p
(dB)
15
handbook, halfpage
10
5
Z
Z
L
MBA379
i
0
0
50
100
150
200
f (MHz)
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
Fig.14 Power gain as a function of frequency;
typical values.
Fig.13 Definition of MOS impedance.
2003 Sep 19
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
0.60 (4×)
1.87 (2×)
0.80 (2×)
0.50 (12×)
1.00 (8×)
7.38 3.60
1.00 (9×)
MGK390
4.60
Dimensions in mm.
Fig.15 Footprint SOT409A.
2003 Sep 19
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
BLF202 scattering parameters
VDS = 12.5 V; ID = 20 mA; note 1
s11
s21
s12
s22
f (MHz)
|s11|
Φ
|s21|
Φ
|s12|
Φ
|s22|
Φ
5
10
1.00
1.00
1.00
0.99
0.99
0.98
0.97
0.96
0.94
0.93
0.92
0.89
0.85
0.82
0.79
0.74
0.70
0.68
0.66
0.64
0.64
0.63
0.64
0.65
0.67
0.68
−2.00
−4.00
5.76
5.75
5.72
5.69
5.65
5.58
5.51
5.42
5.33
5.23
5.12
4.86
4.58
4.29
4.03
3.55
3.15
2.80
2.52
2.27
2.07
1.75
1.51
1.32
1.16
1.04
178.30
176.50
172.90
169.40
165.90
162.40
159.00
−155.70
152.40
149.30
146.40
139.30
132.60
126.60
121.20
111.30
103.30
96.00
0.01
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.12
0.13
0.14
0.15
0.17
0.17
0.18
0.18
0.18
0.18
0.17
0.15
0.14
0.12
0.11
88.30
86.70
83.40
80.20
77.00
73.80
70.70
67.70
64.80
62.00
59.40
53.10
47.20
42.00
37.70
29.30
23.10
17.30
12.90
8.60
0.97
0.97
0.97
0.97
0.96
0.96
0.95
0.94
0.93
0.92
0.92
0.89
0.87
0.85
0.83
0.79
0.77
0.76
0.75
0.74
0.74
0.74
0.75
0.76
0.77
0.78
−2.40
−4.90
20
−7.90
−9.70
30
−11.90
−15.80
−19.60
−23.40
−27.00
−30.70
−34.10
−37.50
−45.60
−53.00
−59.80
−66.00
−77.00
−86.30
−94.30
−101.40
−107.80
−113.50
−123.80
−132.60
−140.60
−148.10
−155.00
−14.50
−19.30
−23.90
−28.50
−33.00
−37.40
−41.60
−45.60
−55.30
−64.10
−72.00
−79.20
−91.70
−101.90
−110.30
−117.20
−123.20
−128.30
−136.60
−143.20
−148.60
−153.30
−157.40
40
50
60
70
80
90
100
125
150
175
200
250
300
350
400
450
500
600
700
800
900
1000
89.80
83.80
78.80
5.20
69.60
−0.70
−5.30
−8.20
−9.70
−9.20
61.40
54.40
48.20
42.90
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
2003 Sep 19
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D
2
B
c
w
H
1
B
2
8
5
L
E
H
E
2
A
1
4
w
e
b
α
1
Q
1
0
2.5
scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
e
H
H
L
Q
w
w
2
α
2
2
1
1
1
0.58
0.43
0.23
0.18
2.36
2.06
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
7°
0°
1.27
0.050
0.25
0.25
0.023 0.009
0.017 0.007
0.093
0.081
0.234 0.203 0.194 0.163
0.198 0.197 0.158 0.157
0.294 0.173 0.040 0.004
0.286 0.167 0.020 0.000
7°
0°
inches
0.010 0.010
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-01-27
SOT409A
2003 Sep 19
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 19
13
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/02/pp14
Date of release: 2003 Sep 19
Document order number: 9397 750 11595
相关型号：
BLF2022S-90
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power
NXP
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