BLF202 [NXP]
HF/VHF power MOS transistor; 高频/甚高频功率MOS晶体管
| 型号： | BLF202 |
| 厂家： | 
NXP |
| 描述： | HF/VHF power MOS transistor |
| 文件： | 总16页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF202
HF/VHF power MOS transistor
Product specification
1999 Oct 20
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
FEATURES
PINNING - SOT409A
PIN
• High power gain
DESCRIPTION
• Easy power control
• Gold metallization
1, 8
2, 3
4, 5
6, 7
source
gate
• Good thermal stability
• Withstands full load mismatch.
source
drain
APPLICATIONS
• Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
8
5
handbook, halfpage
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
175
12.5
2
>10
>50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1999 Oct 20
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
40
V
VGS
ID
gate-source voltage
DC drain current
−
20
V
−
1
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
T
mb ≤ 85 °C
−
5.7
150
200
W
°C
°C
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
Tmb ≤ 85 °C, Ptot = 5.7 W
20.5
K/W
MCD789
10
handbook, halfpage
I
D
(A)
1
(1)
(2)
−1
−2
10
10
2
1
10
10
V
(V)
DS
(1) Current is this area may be limited by RDS(on)
.
(2) mb = 85 °C.
T
Fig.2 DC SOAR.
1999 Oct 20
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
ID = 3 mA; VGS = 0
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
40
2
−
−
V
VGS(th)
IDSS
IGSS
IDSX
RDSon
gfs
ID = 3 mA; VDS = 10 V
−
4.5
10
1
V
VGS = 0; VDS = 12.5 V
−
−
µA
µA
A
VGS = ±20 V; VDS = 0
−
−
VGS = 15 V; VDS = 10 V
ID = 0.3 A; VGS = 15 V
−
1.3
3.5
135
5.3
7.8
1.8
−
drain-source on-state resistance
forward transconductance
input capacitance
−
4
Ω
ID = 0.3 A; VDS = 10 V
80
−
−
mS
pF
pF
pF
Cis
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
−
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
MGP111
MGP112
15
1600
handbook, halfpage
handbook, halfpage
I
T.C.
(mV/K)
D
(mA)
10
5
1200
800
400
0
0
−5
2
3
1
10
10
10
0
4
8
12
16
20
(V)
I
(mA)
D
V
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.3 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.4 Drain current as a function of gate-source
voltage; typical values.
1999 Oct 20
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP113
MGP114
5
30
handbook, halfpage
handbook, halfpage
R
DSon
C
(Ω)
(pF)
4
20
3
2
C
os
10
C
is
1
0
0
0
0
40
80
120
160
4
8
12
16
V
(V)
T (°C)
DS
j
VGS = 15 V; ID = 0.3 A.
VGS = 0; f = 1 MHz.
Fig.5 Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.6 Input and output capacitance as functions
of drain-source voltage; typical values.
MGP115
5
handbook, halfpage
C
rs
(pF)
4
3
2
1
0
0
4
8
12
16
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.7 Feedback capacitance as a function of
drain-source voltage; typical values.
1999 Oct 20
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C; RGS = 237 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
CW, class-B
175
12.5
20
2
>10; typ. 13
>50; typ. 55
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
MGP116
MGP117
20
100
4
handbook, halfpage
handbook, halfpage
G
η
p
D
P
L
(W)
(dB)
16
(%)
80
G
p
3
60
40
12
8
η
D
2
1
4
20
0
0
1
0
0
1.5
2
2.5
3
3.5
0.2
0.4
0.6
0.8
P
(W)
P
(W)
IN
L
Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz.
Fig.8 Power gain and efficiency as a functions of
load power; typical values.
Fig.9 Load power as a function of input power;
typical values.
1999 Oct 20
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
C10
C11
C8
C9
L3
D.U.T.
L4
50 Ω
output
C1
L2
L1
50 Ω
input
L5
C5
C6
C2
R6
R1
R2
C3
C4
L6
+V
C7
D
R3
R5
MGP118
R4
f = 175 MHz.
Fig.10 Test circuit for class-B operation.
1999 Oct 20
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
List of components (class-B test circuit)
COMPONENT
C1, C11
DESCRIPTION
film dielectric trimmer
VALUE
DIMENSIONS
CATALOGUE NO.
2 to 9 pF
2222 809 09005
2222 809 09002
C2, C9
C3, C5
film dielectric trimmer
2 to 9 pF
multilayer ceramic chip capacitor;
note 1
1 nF; 500 V
C4, C6
multilayer ceramic chip capacitor
2 × 100 nF
in parallel,
50 V
2222 852 47104
C7
C8
C10
L1
Sprague electrolytic tantalum
capacitor
2.2 µF; 35 V
5.1 pF; 500 V
9.1 pF; 500 V
137 nH
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
8 turns enamelled 0.8 mm copper
wire
length 5.1 mm;
int. dia. 4 mm;
leads 2 × 5 mm
L2, L3
L4
stripline; note 2
81 Ω
8 mm × 2 mm
3 turns enamelled 1 mm copper wire 57 nH
9 turns enamelled 1 mm copper wire 355 nH
grade 3B Ferroxcube RF choke
length 5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L5
length 11 mm;
int. dia. 7 mm;
leads 2 × 5 mm
L6
4312 020 36642
2322 151 72371
2322 151 71002
2322 151 71005
R1
R2
R3
R4
R5
R6
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
237 Ω
1 kΩ
1 MΩ
5 kΩ
7.5 kΩ
10 Ω
2322 151 77502
2322 153 51009
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness
1.6 mm.
1999 Oct 20
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MGP119
MGP120
250
50
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
40
R
X
125
L
30
20
10
r
i
0
L
x
i
−125
0
0
0
50
100
150
200
50
100
150
200
f (MHz)
f (MHz)
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
RGS = 237 Ω; PL = 2 W.
Fig.11 Input impedance as a function of frequency
(series of components); typical values.
Fig.12 Load impedance as a function of frequency
(series components); typical values.
MGP121
20
handbook, halfpage
G
p
(dB)
15
10
5
handbook, halfpage
Z
Z
L
MBA379
i
0
0
50
100
150
200
f (MHz)
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL = 2 W.
Fig.14 Power gain as a function of frequency;
typical values.
Fig.13 Definition of MOS impedance.
1999 Oct 20
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
0.60 (4×)
1.87 (2×)
0.80 (2×)
0.50 (12×)
1.00 (8×)
7.38 3.60
1.00 (9×)
MGK390
4.60
Dimensions in mm.
Fig.15 Footprint SOT409A.
1999 Oct 20
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D
2
B
c
w
H
1
B
2
8
5
L
E
H
E
2
A
1
4
w
e
b
α
1
Q
1
0
2.5
scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
e
H
H
L
Q
w
w
2
α
2
2
1
1
1
0.58
0.43
0.23
0.18
2.36
2.06
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
7°
0°
1.27
0.050
0.25
0.25
0.023 0.009
0.017 0.007
0.093
0.081
0.234 0.203 0.194 0.163
0.198 0.197 0.158 0.157
0.294 0.173 0.040 0.004
0.286 0.167 0.020 0.000
7°
0°
inches
0.010 0.010
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-01-27
SOT409A
1999 Oct 20
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 20
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
NOTES
1999 Oct 20
15
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
125002/01/pp16
Date of release: 1999 Oct 20
Document order number: 9397 750 06378
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