BLF2047 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF2047 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总12页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BLF2047
UHF power LDMOS transistor
Product specification
1999 Dec 02
Supersedes data of 1999 Jul 01
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
source connected to flange
• Designed for broadband operation (1.8 to 2.2 GHz).
• Internal input and output matching for high gain and
efficiency
handbook, halfpage
1
APPLICATIONS
3
2
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
Top view
MBK394
DESCRIPTION
Fig.1 Simplified outline SOT502A.
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
26
28
65 (PEP)
65 (PEP)
>10
>30
≤−25
Two-tone, class-AB
f1 = 2200; f2 = 2200.1
typ. 12.6
typ. 31
typ. −29
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 02
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
MIN.
MAX.
65
UNIT
drain-source voltage
gate-source voltage
DC drain current
−
−
−
V
V
A
VGS
ID
±15
9
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
Note
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
thermal resistance from junction to heatsink Th = 25 °C, Ptot = 152 W, note 1
1.15
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
CONDITIONS
VGS = 0; ID = 1.4 mA
MIN.
65
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
−
−
V
VDS = 10 V; ID = 140 mA
VGS = 0; VDS = 26 V
1.5
−
−
3.5
10
−
V
−
µA
A
IDSX
VGS =VGSth + 9 V; VDS = 10 V
VGS = ±15 V; VDS = 0
18
−
−
IGSS
gate leakage current
−
250
−
nA
S
gfs
forward transconductance
drain-source on-state resistance
feedback capacitance
VDS = 10 V; ID = 5 A
−
4
RDSon
Crss
VGS =VGSth + 9 V; ID = 5 A
VGS = 0; VDS = 26 V; f = 1 MHz
−
0.17
3.4
−
Ω
−
−
pF
1999 Dec 02
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W; unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
26
28
400
400
65 (PEP)
>10
>30
≤−25
Two-tone, class-AB
f1 = 2200; f2 = 2200.1
65 (PEP) typ. 12.6
typ. 31
typ. −29
Ruggedness in class-AB operation
The BLF2047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; IDQ = 400 mA; PL = 65 W (CW); f = 2200 MHz.
MGS914
MGS913
15
50
η
15
50
η
handbook, halfpage
handbook, halfpage
D
D
(%)
G
p
(dB)
G
p
(dB)
(%)
G
p
40
40
G
p
30
20
10
0
30
20
10
0
η
η
D
D
10
10
5
0
5
0
20
40
60
P
80
(PEP) (W)
20
40
60
P
80
(PEP) (W)
L
L
VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C;
VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
Fig.3 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
1999 Dec 02
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
MGS915
MGS916
0
0
handbook, halfpage
handbook, halfpage
d
d
im
im
(dBc)
(dBc)
−20
−20
d
3
d
3
d
5
d
5
−40
−40
d
7
d
7
−60
−60
0
20
40
60
80
100
0
20
40
60
80
100
P
(PEP) (W)
P
(PEP) (W)
L
L
VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C;
VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.5 Intermodulation distortion as a function of
peak envelope load power; typical values.
MGS917
0
handbook, halfpage
d
3
(dBc)
−20
(1) (2) (3)
−40
−60
0
20
40
60
80
100
P
(PEP) (W)
L
VDS = 26 V; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz.
(1) IDQ = 350 mA.
(2) IDQ = 400 mA.
(3) IDQ = 450 mA.
Fig.6 Intermodulation distortion as a function of
peak envelope load power; typical values.
1999 Dec 02
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
MGS918
MGS919
8
8
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
(Ω)
4
r
i
R
X
L
4
0
0
x
i
L
−4
−4
1.6
−8
1.6
1.8
2
2.2
2.4
2.6
1.8
2
2.2
2.4
2.6
f (GHz)
f (GHz)
VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th ≤ 25 °C.
VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th ≤ 25 °C.
Fig.7 Input impedance as a function of frequency
(series components); typical values.
Fig.8 Load impedance as a function of frequency
(series components); typical values.
F1
R2
R1
V
V
DD
gate
C10
C11
C12
C13
C14
C5
L13
L4
C9
C4
L11
L10
L6
L15
L2
L17
L8
C8
C3
output
50 Ω
input
50 Ω
L16
C6
L18
C7
L19
L20
L1
L3 L5
C2
L7
L12
L14
L9
C1
MGS920
Fig.9 Class-AB test circuit at f = 2.2 GHz.
1999 Dec 02
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
List of components (See Figs 9 and 10)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281
0.4 to 2.5 pF
C3, C8
C4, C9
C5, C12
C10
C11
C13
C14
F1
multilayer ceramic chip capacitor; note 1 12 pF
multilayer ceramic chip capacitor; note 2 12 pF
electrolytic capacitor
10 µF; 100 V
2222 037 59109
2222 581 16641
multilayer ceramic chip capacitor; note 1 1 nF
multilayer ceramic chip capacitor
tantal SMD capacitor
electrolytic capacitor
Ferroxcube chip-bead 8DS3/3/8/9-4S2
stripline; note 3
100 nF
4.5 µF; 50 V
100 µF; 63 V
2222 037 58101
4330 030 36301
L1
50 Ω
2.9 × 2.4 mm
4 × 11.7 mm
3.7 × 2.4 mm
2 × 30.8 mm
3.6 × 2.4 mm
3 × 18.8 mm
7.8 × 2.4 mm
4 × 18.3 mm
5 × 6.3 mm
L2
stripline; note 3
14.5 Ω
50 Ω
L3
stripline; note 3
L4
stripline; note 3
6 Ω
L5
stripline; note 3
50 Ω
L6
stripline; note 3
9.5 Ω
50 Ω
L7
stripline; note 3
L8
stripline; note 3
9.8 Ω
24.4 Ω
5.1 Ω
25.4 Ω
5.7 Ω
25.4 Ω
11.3 Ω
50 Ω
L9
stripline; note 3
L10, L11
L12
L13
L14
L15
L16
L17
L18
L19
L20
R1, R2
stripline; note 3
7 × 37 mm
stripline; note 3
10.1 × 6 mm
2.4 × 32.8 mm
7.4 × 6 mm
stripline; note 3
stripline; note 3
stripline; note 3
2.5 × 15.6 mm
10.8 × 2.4 mm
3 × 10.4 mm
2.3 × 2.4 mm
3 × 2.4 mm
stripline; note 3
stripline; note 3
16.1 Ω
50 Ω
stripline; note 3
stripline; note 3
50 Ω
stripline; note 3
50 Ω
5.5 × 2.4 mm
metal film resistor
10 Ω, 0.6 W
2322 156 11009
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
1999 Dec 02
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
50
50
95
BLF2047 INPUT
BLF2047 OUTPUT
PH990109
PH990110
V
V
DD
GS
R2
C14
C11
C12
C13
C5
F1
R1
C10
C9
C4
C8
C3
C7
C2
C1
C6
BLF2047 INPUT
BLF2047 OUTPUT
PH990109
PH990110
MGS921
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.10 Component layout for 2.2 GHz class-AB test circuit.
1999 Dec 02
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
PACKAGE OUTLINE
Flanged LDMOST package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
4.72
3.99
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.186
0.157
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-06-07
99-10-13
SOT502A
1999 Dec 02
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 02
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
NOTES
1999 Dec 02
11
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/04/pp12
Date of release: 1999 Dec 02
Document order number: 9397 750 06449
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