BLF4G22S-100 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管![BLF4G22S-100](http://pdffile.icpdf.com/pdf1/p00143/img/icpdf/BLF4G_793112_icpdf.jpg)
型号: | BLF4G22S-100 |
厂家: | ![]() |
描述: | UHF power LDMOS transistor |
文件: | 总14页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
Tcase = 25 °C; in a common source class-AB test circuit; IDq = 900 mA; typical values
Mode of operation f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
IMD3
(dBc)
ACPR
(dBc)
2-carrier
W-CDMA[1]
f1 = 2135; f2 = 2145 28
25 (AV) 13.5
26
−37
−41
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
900 mA:
◆ Load power = 25 W (AV)
◆ Gain = 13.5 dB (typ)
◆ Efficiency = 26 % (typ)
◆ ACPR = −41 dBc (typ)
◆ IMD3 = −37 dBc (typ)
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness > 10 : 1 VSWR at 100 W CW
■ High efficiency
■ High peak power capability (> 150 W)
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2:
Pin
BLF4G22-100 (SOT502A)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
BLF4G22S-100 (SOT502B)
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
Version
BLF4G22-100
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G22S-100
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+15
12
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
-
9397 750 14338
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Product data sheet
Rev. 01 — 10 January 2006
2 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
thermal resistance from
junction to case
Tcase = 80 °C;
PL = 25 W;
-
0.76 0.85 K/W
2-carrier W-CDMA
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
65
2.5
2.7
-
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 180 mA
VDS = 28 V; ID = 900 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 6 V;
3.1
3.2
-
3.5
3.7
3
V
V
µA
A
IDSX
drain cut-off current
27
30
-
VDS = 10 V
IGSS
gfs
gate leakage current
transfer conductance
VGS = 15 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
-
300 nA
9.0
0.09
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 6 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
2.5
-
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test
model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
PL(AV) = 25 W
PL(AV) = 25 W
PL(AV) = 25 W
12.5 13.5
-
dB
IRL
input return loss
drain efficiency
9
24
-
15
-
dB
ηD
26
-
%
IMD3
ACPR
third order intermodulation distortion PL(AV) = 25 W
adjacent channel power ratio PL(AV) = 25 W
−37
−41
−35
−39
dBc
dBc
-
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch
corresponding to VSWR > 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 900 mA; PL = 100 W (CW).
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
001aac270
40
−15
η
(%)
G
(dB)
D
ACPR,
IMD3
(dBc)
η
D
p
30
−25
IMD3
20
10
0
−35
−45
−55
ACPR
G
p
0
10
20
30
40
P
50
(W)
L(AV)
(1) 2-carrier W-CDMA performance; VDS = 28 V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz;
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of
average load power; typical values
Table 8:
Typical impedance values
VDS = 28 V; IDq = 900 mA; PL = 25 W (AV); Tcase = 25 °C.
Frequency
(MHz)
ZS
(Ω)
ZL
(Ω)
2110
2140
2170
2.2 + j4.8
2.2 + j4.6
2.2 + j4.5
1.5 − j2.6
1.5 − j2.4
1.4 − j2.2
Table 9:
Code[1]
RF gain grouping
Gain (dB)[2]
Min
Max
13.0
13.5
14.0
14.5
-
A
B
C
D
E
12.5
13.0
13.5
14.0
14.5
[1] 0.2 dB overlap is allowed for measurement reproducibility.
[2] For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz.
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
001aac271
001aac272
16
−20
IMD3
(dBc)
G
p
(1)
(2) (3) (4)
−30
(dB)
(5)
(1)
14
−40
−50
−60
−70
(4)
(5)
12
10
(2)
(3)
2
3
2
3
1
10
10
10
1
10
10
10
P
(W)
P
(W)
L(PEP)
L(PEP)
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
Two-tone measurement;
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
Two-tone measurement;
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
Fig 2. Power gain as a function of peak envelope load
power; typical values
Fig 3. Third order intermodulation distortion as a
function of peak envelope power; typical values
001aac274
001aac273
11
10
16
t
50%
(hr)
G
p
10
9
10
(dB)
14
10
8
7
6
10
P
P
= 135 W (= 52.1 dBm)
= 161 W (= 51.3 dBm)
1dB
3dB
12
10
10
10
100
140
180
220
260
0
40
80
120
160
200
(W)
T (°C)
j
P
L
ton = 8 µs
toff = 1 ms
Fig 4. Pulsed peak power capability; typical values
Fig 5. t50% failures due to electromigration as a
function of junction temperature
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 14
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xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
C1
C12
C13
V
G
R1
V
D
C11
C2
C14
C4
C3
L7
L14
C15
C8 C9 C10
C5
C6
L6
DUT
C7
L1
L10
C16
L11
L13
L2 L3
L12
L4
L5
L8
L9
001aac275
See Table 10 for list of components
Fig 6. Test circuit for operation at 2.14 GHz
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50 mm
C13
C1
V
R1
G
C12
C11
C2
C3
C14
C15
C4
L7
L14
C5
C8 C9 C10
75 mm
C6
L6
C16
C7
L1
L2 L3
L10
L11
L13
L12
L4
L5
L8
L9
001aac276
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
The other side is unetched and serves as a ground plane.
See Table 10 for list of components.
Fig 7. Component layout for 2.14 GHz test circuit
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
Table 10: List of components (see Figure 6 and Figure 7 )
Component
Description
Value
Dimensions
C1, C2, C11
C3
tantalum capacitor
10 µF; 35 V
4.7 µF; 25 V
8.2 pF
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
[1]
C4, C10
C5, C8, C14, multilayer ceramic chip capacitor
C15
1.5 µF; 50 V
[2]
[1]
C6
C7
C9
C12
C13
C16
L1
multilayer ceramic chip capacitor
0.6 pF
multilayer ceramic chip capacitor
4.7 pF
multilayer ceramic chip capacitor
220 nF; 50 V
220 µF; 63 V
4.7 µF; 50 V
7.5 pF
electrolytic capacitor
tantalum capacitor
multilayer ceramic chip capacitor
stripline
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Z0 = 50 Ω
Z0 = 50 Ω
Z0 = 24 Ω
Z0 = 15 Ω
Z0 = 9.5 Ω
Z0 = 60 Ω
Z0 = 60 Ω
Z0 = 8.2 Ω
Z0 = 5.5 Ω
Z0 = 50 Ω
Z0 = 50 Ω
Z0 = 34 Ω
Z0 = 50 Ω
Z0 = 43 Ω
4.7 Ω; 0.1 W
(W × L) 32.3 mm × 1.7 mm
(W × L) 2.2 mm × 1.7 mm
(W × L) 2.3 mm × 4.8 mm
(W × L) 2.4 mm × 8 mm
(W × L) 9.3 mm × 14 mm
(W × L) 4 mm × 1.2 mm
(W × L) 14.5 mm × 1.2 mm
(W × L) 9.3 mm × 16.8 mm
(W × L) 3 mm × 25.8 mm
(W × L) 11 mm × 1.7 mm
(W × L) 9.5 mm × 1.7 mm
(W × L) 3 mm × 3 mm
L2
stripline
L3
stripline
L4
stripline
L5
stripline
L6
stripline
L7
stripline
L8
stripline
L9
stripline
L10
L11
L12
L13
L14
R1
stripline
stripline
stripline
stripline
(W × L) 12.7 mm × 1.7 mm
(W × L) 13.5 mm × 2.1 mm
stripline
SMD resistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 180R or capacitor of same quality.
[4] Striplines are on a double copper-clad Taconic RF35 PCB (εr = 3.5); thickness = 0.76 mm.
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 8. Package outline SOT502A
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
9 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
Fig 9. Package outline SOT502B
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
10 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 11: Abbreviations
Acronym
3GPP
CW
Description
Third Generation Partnership Project
Continuous Wave
CCDF
DPCH
IDq
Complementary Cumulative Distribution Function
Dedicated Physical Channels
quiescent drain current
LDMOS
PAR
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average Ratio
PEP
Peak Envelope Power
RF
Radio Frequency
TM1
Test Model 1
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
11 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
11. Revision history
Table 12: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
9397 750 14338
Supersedes
BLF4G22-100_4G22 20060110
S-100_1
Product data sheet
-
-
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
12 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14338
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
13 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
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© Koninklijke Philips Electronics N.V. 2006
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consequence of its use. Publication thereof does not convey nor imply any license under
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Date of release: 10 January 2006
Document number: 9397 750 14338
Published in The Netherlands
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