BLF6G15LS-40RN,112 [NXP]
BLF6G15LS-40RN;
| 型号： | BLF6G15LS-40RN,112 |
| 厂家： | 
NXP |
| 描述： | BLF6G15LS-40RN |
| 文件： | 总12页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G15L-40RN;
BLF6G15LS-40RN
Power LDMOS transistor
Rev. 2 — 14 May 2012
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
(V)
28
PL(AV)
(W)
Gp
D
ACPR
(dBc)
45[1]
(MHz)
(dB)
22.5
(%)
13.5
2-carrier W-CDMA
1476 to 1511
2.5
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at probability of 0.01 % on CCDF carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz,
a supply voltage of 28 V and an IDq of 375 mA:
Average output power = 2.5 W
Power gain = 22.5 dB
Efficiency = 13.5 %
ACPR = 45 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF6G15L-40RN (SOT1135A)
1
2
3
drain
gate
1
1
[1]
source
2
3
3
sym112
2
BLF6G15LS-40RN (SOT1135B)
1
2
3
drain
gate
1
1
[1]
source
2
3
3
sym112
2
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G15L-40RN
BLF6G15LS-40RN
-
-
flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
earless flanged ceramic package; 2 leads SOT1135B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
-
VGS
Tstg
0.5 +11
V
65
+150 C
Tj
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 2.5 W (CW) 1.30 K/W
BLF6G15L-40RN_6G15LS-40RN
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
2 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 C per section; unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.59 mA
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 59 mA
VGS = 0 V; VDS = 28 V
1.4 1.8 2.4
V
-
-
-
1.4
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
9.4
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
140
-
nA
S
forward transconductance
VDS = 10 V; ID = 58.9 mA
0.5
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 2.06 A
0.32 -
7. Application information
Table 7.
2-carrier W-CDMA RF performance
Class-AB production test circuit; PAR 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz;
3GPP test model 1; 64 DPCH; f1 = 1476 MHz; f2 = 1511 MHz; RF performance at VDS = 28 V;
IDq = 375 mA; Tcase = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ Max
Unit
W
PL(AV)
Gp
average output power
-
2.5
-
-
power gain
PL(AV) = 2.5 W
PL(AV) = 2.5 W
PL(AV) = 2.5 W
PL(AV) = 2.5 W
19.8
22.5
dB
dB
%
RLin
D
input return loss
-
16 11
13.5
45 40
drain efficiency
11.5
-
-
ACPR
adjacent channel power ratio
dBc
7.1 Ruggedness in Class-AB operations
The BLF6G15L-40RN and the BLF6G15LS-40RN are capable of withstanding a load
mismatch corresponding to VSWR 10 : 1 through all phases under following conditions:
V
DS = 28 V; IDq = 375 mA; PL = 40 W; f = 1476 MHz (CW).
8. Test information
8.1 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values per section. IDq = 330 mA; main transistor VDS = 28 V
ZS and ZL defined in Figure 1.
f
ZS
ZL
(MHz)
1450
1480
1510
()
()
4.4 j5.9
4.4 j4.1
6.4 j4.7
5.5 j4.6
5.0 j5.0
5.0 j5.0
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
3 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
8.2 One-tone graphs
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VDS = 28 V; IDq = 375 mA.
(1) Gp at f = 1475 MHz
(2) Gp at f = 1493 MHz
(3) Gp at f = 1511 MHz
(4)
(5)
(6)
D at f = 1475 MHz
D at f = 1493 MHz
D at f = 1511 MHz
Fig 2. Power gain and drain efficiency as function of load power; typical values
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
4 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
8.3 2-Carrier W-CDMA graphs
3GPP, test model 1; 64 DPCH, PAR = 8.4 dB at 0.01 % probability, 5 MHz carrier spacing.
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Tamb = 25 C.
Tamb = 25 C.
(1) Gp at f = 1475 MHz
(2) Gp at f = 1493 MHz
(3) Gp at f = 1511 MHz
(1) ACPR5M at f = 1475 MHz
(2) ACPR5M at f = 1493 MHz
(3) ACPR5M at f = 1511 MHz
(4) ACPR10M at f = 1475 MHz
(5) ACPR10M at f = 1493 MHz
(6) ACPR10M at f = 1511 MHz
(4)
(5)
(6)
D at f = 1475 MHz
D at f = 1493 MHz
D at f = 1511 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
Fig 4. Adjacent channel power ratio (5 MHz and
10 MHz) as a function of load power; typical
values
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
5 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
8.4 Test circuit
C10
C2
C8
C9
C3
C4
C11
C12
R1
C1
C17
C6
C7
R2
C13
C14
C5
C15
C16
aaa-003059
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with r = 3.5,
thickness = 0.762 mm and thickness copper plating = 35 m.
See Table 9 for list of components.
Fig 5. Component layout for test circuit
Table 9.
List of components
For test circuit, see Figure 5.
Component
C1, C17
C3, C6
Description
Value
Remarks
[1]
[2]
[2]
[2]
[2]
[3]
[3]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
24 pF
68 pF
C4, C7, C8
C9, C14
C13
150 pF
47 pF
15 pF
C2, C5, C11, C16
C10, C15
C12
10 F
0.1 F
2200 F, 50 V
15
R1, R2
chip resistor
[1] American technical ceramics type 800B or capacitor of same quality.
[2] American technical ceramics type 100B or capacitor of same quality.
[3] TDK or capacitor of same quality.
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
6 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT1135A
D
A
F
D
U
1
B
C
1
q
c
1
p
U
2
E
1
H
E
w
1
A
B
3
A
2
b
w
2
C
Q
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
1
F
H
p
Q
q
U
1
U
2
w
1
w
2
max 4.65 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 3.30 1.70
mm nom
min 3.76 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067
inches nom
min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057
20.45 9.91
15.24
0.25 0.51
0.01 0.02
20.19 9.65
0.805 0.39
0.6
0.795 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1135a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1135A
Fig 6. Package outline SOT1135A
BLF6G15L-40RN_6G15LS-40RN
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
7 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
Earless flanged ceramic package; 2 leads
SOT1135B
D
3
A
F
D
D
1
U
1
c
1
U
2
E
1
H
E
2
b
w
2
D
Q
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
1
F
H
Q
U
1
U
2
w
2
max 4.65 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91
mm nom
0.51
0.02
min 3.76 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 0.39 0.39
inches nom
min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.38 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1135b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1135B
Fig 7. Package outline SOT1135B
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
8 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical Channel
ElectroStatic Discharge
LDMOS
PAR
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average Ratio
RF
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
12. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
Product data sheet
Change notice Supersedes
BLF6G15L-40RN_6G15LS-40RN v.2 20120514
-
BLF6G15L-40RN_6G15L
S-40RN v.1
Modifications:
• Section 1.1 on page 1: updated
• Section 1.2 on page 1: updated
• Table 4 on page 2: ID removed
• Table 5 on page 2: updated
• Table 6 on page 3: updated
• Table 7 on page 3: updated
• Section 7.1 on page 3: added
• Section 8 on page 3: added
BLF6G15L-40RN_6G15LS-40RN v.1 20111027
Objective data sheet
-
-
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
9 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
13.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
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applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
10 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
11 of 12
BLF6G15L(S)-40RN
NXP Semiconductors
Power LDMOS transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in Class-AB operations . . . . . . . . 3
3
4
5
6
7
7.1
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Impedance information. . . . . . . . . . . . . . . . . . . 3
One-tone graphs. . . . . . . . . . . . . . . . . . . . . . . . 4
2-Carrier W-CDMA graphs . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1
8.2
8.3
8.4
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 May 2012
Document identifier: BLF6G15L-40RN_6G15LS-40RN
相关型号：
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