BLT50TRL [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BLT50TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 晶体 射频双极晶体管 光电二极管 放大器 |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50
UHF power transistor
April 1991
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLT50
FEATURES
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit
• SMD encapsulation
(note 1).
• Gold metallization ensures
excellent reliability.
MODE OF OPERATION f (MHz)
VCE (V) PL (W) Gp (dB) ηc (%)
c.w. narrow band
470
7.5
1.2
> 10
> 55
DESCRIPTION
Note
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
1. Ts = temperature at soldering point of collector tab.
PIN CONFIGURATION
communications band.
age
4
PINNING - SOT223
c
PIN
DESCRIPTION
emitter
handbook, halfpage
b
1
2
3
4
base
e
MBB012
emitter
collector
1
2
3
MSB002 - 1
Top view
Fig.1 Simplified outline and symbol.
April 1991
2
Philips Semiconductors
Product specification
UHF power transistor
BLT50
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
VCEO
VEBO
IC, IC(AV)
ICM
collector-emitter voltage
emitter-base voltage
collector current
open base
10
3
V
open collector
DC or average value
V
500
1.5
mA
A
collector current
peak value
f > 1 MHz
Ptot
total power dissipation
f > 1 MHz;
Ts = 103 °C
(note 1)
−
2
W
Tstg
Tj
storage temperature range
−65
150
175
°C
°C
operating junction temperature
−
Note
1. Ts = temperature at soldering point of collector tab.
MEA217
1
handbook, halfpage
I
C
(A)
0.5
0.2
0.1
2
1
10
10
V
(V)
CE
Ts = 103 °C.
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL
PARAMETER
from junction to soldering point
CONDITIONS
MAX.
UNIT
Rth j-s(DC)
Ptot = 2 W; Ts = 103 °C
36
K/W
April 1991
3
Philips Semiconductors
Product specification
UHF power transistor
BLT50
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
V(BR)CBO
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX.
UNIT
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
open emitter;
IC = 5 mA
−
−
−
−
−
−
−
V
V(BR)CEO
V(BR)EBO
ICES
open base;
IC = 10 mA
10
3
−
V
open collector;
IE = 1 mA
−
V
VBE = 0;
VCE = 10 V
−
250
−
µA
hFE
VCE = 5 V;
IC = 300 mA
25
0.55
ESBR
second breakdown energy
L = 25 mH;
BE = 10 Ω;
f = 50 Hz
−
mJ
pF
pF
R
Cc
collector capacitance
feedback capacitance
VCB = 7.5 V;
IE = Ie = 0;
f = 1 MHz
−
−
4.7
2.9
6
Cre
VCE = 7.5 V;
IC = 0;
4.5
f = 1 MHz
MEA218
10
handbook, halfpage
C
c
(pF)
8
6
4
2
0
0
2
4
6
8
10
(V)
V
CB
IE = ie = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage, typical values.
April 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLT50
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit.
MODE OF
OPERATION
f (MHz)
470
V
CE (V)
PL (W)
Gp (dB)
ηc (%)
> 55
c.w. narrow band
7.5
1.2
> 10
typ. 11.2
typ. 65
MEA219
MEA220
16
2
handbook, halfpage
handbook, halfpage
G
p
(dB)
100
P
L
η
(W)
1
12
(%)
G
p
80
60
40
8
4
η
0
0.6
0
0
100
200
1.0
1.4
1.8
2.2
P
(mW)
P
(W)
D
L
VCE = 7.5 V; f = 470 MHz.
VCE = 7.5 V; f = 470 MHz.
Fig.4 Gain and efficiency as functions of load
power, typical values.
Fig.5 Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and Ts ≤ 60 °C, where Ts is the temperature at the
soldering point of the collector tab.
April 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLT50
C1
C4
C3
L1
L4
L5
50 Ω
50 Ω
TUT
C2
R1
L2
L6
L7
+V
CC
R2
L3
C5
C6
C7
MBA576
Fig.6 Class-B test circuit at f = 470 MHz.
List of components (see test circuit)
COMPONENT
C1
DESCRIPTION
film dielectric trimmer
VALUE
DIMENSIONS
CATALOGUE NO.
1.4 to 5.5 pF
1.4 to 5.5 pF
2 to 9 pF
2222 809 09004
2222 809 09001
2222 809 09002
2222 809 09005
C2
C3
C4
C5
film dielectric trimmer
film dielectric trimmer
film dielectric trimmer
2 to 9 pF
multilayer ceramic chip capacitor
(note 1)
100 pF
C6
multilayer ceramic chip capacitor
(note 1)
1 nF
C7
L1
L2
63 V electrolytic capacitor
stripline (note 2)
2.2 µF
50 Ω
54 mm × 4.7 mm
5 turns enamelled 0.4 mm copper
wire
int. dia. 3 mm
L3, L7
grade 3B1 Ferroxcube wideband RF
choke
4312 020 36640
L4
L5
L6
stripline (note 2)
50 Ω
36 mm × 4.7 mm
int. dia. 4 mm
int. dia. 3 mm
1 turn enamelled 1.4 mm copper wire 5 nH
3 turns enamelled 0.4 mm copper
wire
R1, R2
0.25 W metal film resistor
10 Ω, 5%
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄16 inch.
April 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT50
V
CC
L7
C7
L3
C6
C5
R2
R1
L2
L6
C1
C2
C3
C4
L4
L1
L5
MBA575
140 mm
strap
strap
80 mm
rivets
(14x)
strap
mounting
screws
(8x)
strap
MBA574
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.7 Component layout for 470 MHz class-B test circuit.
April 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLT50
MEA221
MEA222
4
20
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
Z
L
(Ω)
3
15
r
i
X
R
L
2
10
5
x
i
L
1
0
0
350
450
550
650
350
450
550
650
f (MHz)
f (MHz)
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.8 Input impedance (series components) as a
function of frequency, typical values.
Fig.9 Load impedance (series components) as a
function of frequency, typical values.
MEA223
16
handbook, halfpage
G
p
(dB)
12
handbook, halfpage
8
Z
i
4
0
Z
MBA451
L
350
450
550
650
f (MHz)
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.10 Definition of transistor impedance.
Fig.11 Power gain as a function of frequency,
typical values.
April 1991
8
Philips Semiconductors
Product specification
UHF power transistor
BLT50
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
April 1991
9
Philips Semiconductors
Product specification
UHF power transistor
BLT50
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
10
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